ABSTRACT
We demonstrate the successful implementation of a terahertz (THz) quantum-well photodetector (QWP) for effective signal collection in a scattering-type scanning near-field optical microscope (s-SNOM) system. The light source is an electrically pumped THz quantum cascade laser (QCL) at 4.2 THz, which spectrally matches with the peak photoresponse of THz QWP. The sensitive THz QWP has a low noise equivalent power (NEP) of about 1.1 pW/Hz0.5 and a spectral response range from 2 to 7 THz. The fast-responding capability of the THz QWP is vital for detecting the rapidly tip-modulated THz light which can effectively suppress the background noise. The THz images of the nanostructure demonstrate a spatial resolution of about 95 nm, corresponding to â¼λ/752 at 4.2 THz. We experimentally investigate and theoretically interpret the formation of the fringes which appear at the edge position of a gold stripe in the THz near-field image.
ABSTRACT
Infrared and optical spectroscopy represents one of the most informative methods in advanced materials research. As an important branch of modern optical techniques that has blossomed in the past decade, scattering-type scanning near-field optical microscopy (s-SNOM) promises deterministic characterization of optical properties over a broad spectral range at the nanoscale. It allows ultrabroadband optical (0.5-3000 µm) nanoimaging, and nanospectroscopy with fine spatial (<10 nm), spectral (<1 cm-1 ), and temporal (<10 fs) resolution. The history of s-SNOM is briefly introduced and recent advances which broaden the horizons of this technique in novel material research are summarized. In particular, this includes the pioneering efforts to study the nanoscale electrodynamic properties of plasmonic metamaterials, strongly correlated quantum materials, and polaritonic systems at room or cryogenic temperatures. Technical details, theoretical modeling, and new experimental methods are also discussed extensively, aiming to identify clear technology trends and unsolved challenges in this exciting field of research.
ABSTRACT
The solution-processed PbSe colloidal quantum-dot (CQD) infrared photodetector with tandem architecture is proposed to address the high dark current issue. The electrical transport mechanism in tandem has been fundamentally changed in which the recombination of carriers at an intermediate layer becomes dominant rather than carriers hopping between nearest neighbors in CQD materials. As a result, the tandem photodetector exhibits ultra-high detectivities of 4.7 × 10(13) Jones and 8.1 × 10(13) Jones under 34 µW cm(-2) illumination at 1100 nm, at 275 K and 100 K, respectively.
ABSTRACT
Design and fabrication of monolithically integrated III-nitride visible light-emitting-diodes (LEDs) and ultraviolet Schottky barrier-photodetectors (SB-PDs) have been proposed and demonstrated. Responsivity up to 0.2 AW(-1) at 365 nm for GaN SB-PDs has been achieved. It is shown that those UV SB-PDs were capable of sensitive UV light detection down to 7.16×10(-4) W/cm2 at 365 nm, whereas simultaneous operation of on-chip blue LEDs has produced negligible crosstalk at practical illumination brightness. Monolithically integrated LEDs and SB-PDs can function as transmitters to emit visible light signals, and as receivers to analyze incoming UV signals, respectively; this offers the potential of using such devices for bi-directional optical wireless communication applications.
ABSTRACT
In this paper, Monte Carlo simulations were performed to determine the potential efficiencies of luminescent solar concentrator (LSC) systems using PbSe quantum dots (QDs) as the active fluorescent material. The simulation results suggest that PbSe QD LSCs display good absorption characteristics, but yield limited LSC power conversion efficiency due to self-absorption and down-conversion loss. It is proposed that the self-absorption loss can be reduced by utilizing Förster resonance energy transfer between two different sizes of PbSe QDs, yielding pronounced improvement in the optical efficiency of LSCs.
ABSTRACT
The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.
ABSTRACT
This study investigates the feasibility of loading nanostructured lasing medium and magnetic nanocrystals in the same microbead for potential applications in bio- and chemical sensing. A sequential infiltration process is proposed and tested for the preparation of magnetic and lasing microbeads by incorporating, respectively, iron oxide nanocrystals in the inner cores and colloidal quantum dots (CQDs) in the periphery regions of mesoporous silica microbeads. The co-doped bead structure was confirmed by electron microscopy and energy dispersive spectroscopy. The lasing action of the CQD gain medium in the mesoporous beads was characterized with micro-photoluminescence, revealing sharp whispering gallery mode lasing signatures, whereas the distinguishing superparamagnetic property was measured from the co-doped microbeads with vibrating sample magnetometry.
ABSTRACT
PbSe quantum dot light emitting diodes (QD-LEDs) of a multi-layer architecture are reported in the present work to exhibit high external quantum efficiencies. In these devices, a ligand replacement technique was employed to activate PbSe QDs, and ZnO nanoparticles were used for the electron transport layer. The emission wavelength of this solution processed device is QD size tunable over a broad spectral range, and an LED efficiency of 0.73% was measured at 1412 nm. Higher efficiencies at longer wavelengths are also inferred from spectral characterization.
ABSTRACT
We present in this communication our study of the nonradiative energy transfer between colloidal quantum dot (QD) phosphors and nitride nanopillar light emitting diodes (LEDs). An epitaxial p-i-n InGaN/GaN multiple quantum-well (QW) heterostructure was patterned and dry-etched to form dense arrays of nanopillars using a novel etch mask consisting of self-assembled In3Sn clusters. Colloidal QD phosphors have been deposited into the gaps between the nanopillars, leading to sidewall coupling between the QDs and InGaN QW emitters. In this approach, close QW-QD contact and a low-resistance design of the LED contact layer were achieved simultaneously. Strong non-radiative energy transfer was observed from the InGaN QW to the colloidal QD phosphors, which led to a 263% enhancement in effective internal quantum efficiency for the QDs incorporated in the nanopillar LEDs, as compared to those deposited over planar LED structures. Time-resolved photoluminescence was used to characterize the energy transfer process between the QW and QDs. The measured rate of non-radiative QD-QW energy-transfer agrees well with the value calculated from the quantum efficiency data for the QDs in the nanopillar LED.
ABSTRACT
Silver nanoparticle/bismuth oxide composite films were deposited by cosputtering and annealed at different temperatures. The X-ray diffraction results demonstrate that the silver and bismuth oxide were well crystallized after 600 degrees C thermal annealing. The linear absorption peaks show a red-shift behavior while increasing annealing temperature. The annealing effect of the third-order nonlinear optical susceptibilities and ultrafast nonlinear optical response of the silver nanoparticles/bismuth oxide composite thin films are investigated using the femtosecond time-resolved optical Kerr effect technique under 800 nm wavelength. The maximum value of chi(3) of Ag:Bi2O3 thin films is 2.1X10 esu, which occurs at an annealing temperature of 600 degrees C. The ultrafast optical response spectra demonstrate the temperature dependence of decay process time.
