Activated Biomass-derived Graphene-based Carbons for Supercapacitors with High Energy and Power Density.

Here, we present a facile and low-cost method to produce hierarchically porous graphene-based carbons from a biomass source. Three-dimensional (3D) graphene-based carbons were produced through continuous sequential steps such as the formation and transformation of glucose-based polymers into 3D foam-like structures and their subsequent carbonization to form the corresponding macroporous carbons with thin graphene-based carbon walls of macropores and intersectional carbon skeletons. Physical and chemical activation was then performed on this carbon to create micro- and meso-pores, thereby producing hierarchically porous biomass-derived graphene-based carbons with a high Brunauer-Emmett-Teller specific surface area of 3,657 m2 g-1. Owing to its exceptionally high surface area, interconnected hierarchical pore networks, and a high degree of graphitization, this carbon exhibited a high specific capacitance of 175 F g-1 in ionic liquid electrolyte. A supercapacitor constructed with this carbon yielded a maximum energy density of 74 Wh kg-1 and a maximum power density of 408 kW kg-1, based on the total mass of electrodes, which is comparable to those of the state-of-the-art graphene-based carbons. This approach holds promise for the low-cost and readily scalable production of high performance electrode materials for supercapacitors.

Effect of curing temperature on nano-silver paste ink for organic thin-film transistors.

Silver (Ag) metal electrode having 20 microm channel length was printed by reverse offset printing (ROP) using nano-silver paste ink for the source/drain of organic thin-film transistors (OTFT). Specific resistance and surface roughness of printed Ag electrodes with increasing curing temperature were investigated, and surface morphology and grain growth mechanism were systematically verified using a scanning electron microscope (SEM) and atomic force microscope (AFM) in order to obtain an optimized ROP Ag electrode. The Ag electrode was applied to fabricate top-gate/bottom-contact poly(3-hexylthiophene) OTFT devices, which showed reproducible OTFT characteristics such as the field-effect mobility, threshold voltage, and an on/off-current ratio of -10(-3) cm2/Vs, 0.36 V, and -10(2), respectively.

Remarkable enhancement of hole transport in top-gated N-type polymer field-effect transistors by a high-k dielectric for ambipolar electronic circuits.

A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (~0.11 cm(2) V(-1) s(-1) ) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.

Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) < 70 nA when I(on) > 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

Antimony selenide phase-change nanowires for memory application.

Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalyst-free approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (approximately 10 Momega) and low-resistance (approximately 1 komega) states which are attributed to amorphous and crystalline states, respectively.