Regulation of interfacial Dzyaloshinskii-Moriya interaction in ferromagnetic multilayers.

Interfacial Dzyaloshinskii-Moriya interaction (i-DMI) exists in the film materials with inversion symmetry breaking, which can stabilize a series of nonlinear spin structures and control their chirality, such as Néel-type domain wall, magnetic skyrmion and spin spiral. In addition, the strength and chirality of i-DMI are directly related to the dynamic behavior of these nonlinear spin structures. Therefore, regulating the strength and chirality of i-DMI not only has an important scientific significance for enriching spintronics and topological physics, but also has a significant practical value for constructing a new generation of memorizer, logic gate, and brain-like devices with low-power. This review summarizes the research progress on the regulation of i-DMI in ferromagnetic films and provides some prospects for future research.

A nonuniform demagnetizing field model for both static and dynamic responses of anisotropic magnetoresistive thin film sensors.

In this paper, an anisotropic magnetoresistive (AMR) thin film sensor which can be used for magnetic scale has been prepared, and its output voltage is about 4.7-4.9 mV V-1. On the basis of the Stoner-Wohlfarth model and with considering the non-uniformity of the demagnetizing field along the width direction of the strips, both the static and dynamic responses of the AMR sensors have been calculated. The results have shown that the calculated results are in agreement with the experimental data. The magnetization rotation in the magnetic sensor strongly depends on the nonuniform demagnetizing field along the width direction. The magnetization at the center is easily rotated into the field direction, and the magnetization at the edge is difficult to be rotated. The smaller the width of the magnetoresistive strip is, the larger both the demagnetizing field at the edge and the saturation field of the magnetic sensor are. The results are helpful for understanding the magnetization rotation of magnetic sensors and developing the magnetic sensors with high performance.

Mesoporous Drug Delivery System: From Physical Properties of Drug in Solid State to Controlled Release.

Mesoporous materials, which exhibit great potential in the control of polymorphs and delivery of poorly water-soluble drugs, have obtained considerable attention in the field of pharmaceutical science. The physical properties and release behaviors of amorphous or crystalline drugs may be affected by formulating them into mesoporous drug delivery systems. In the past few decades, an increasing amount of papers have been written about mesoporous drug delivery systems, which play a crucial role in improving the properties of drugs. Herein, mesoporous drug delivery systems are comprehensively reviewed in terms of their physicochemical characteristics, control of polymorphic forms, physical stability, in vitro performance, and in vivo performance. Moreover, the challenges and strategies of developing robust mesoporous drug delivery systems are also discussed.

Local Manipulation of Skyrmion Nucleation in Microscale Areas of a Thin Film with Nitrogen-Ion Implantation.

Precise manipulation of skyrmion nucleation in microscale or nanoscale areas of thin films is a critical issue in developing high-efficient skyrmionic memories and logic devices. Presently, the mainstream controlling strategies focus on the application of external stimuli to tailor the intrinsic attributes of charge, spin, and lattice. This work reports effective skyrmion manipulation by controllably modifying the lattice defect through ion implantation, which is potentially compatible with large-scale integrated circuit technology. By implanting an appropriate dose of nitrogen ions into a Pt/Co/Ta multilayer film, the defect density was effectively enhanced to induce an apparent modulation of magnetic anisotropy, consequently boosting the skyrmion nucleation. Furthermore, the local control of skyrmions in microscale areas of the macroscopic film was realized by combining the ion implantation with micromachining technology, demonstrating a potential application in both binary storage and multistate storage. These findings provide a new approach to advancing the functionalization and application of skyrmionic devices.

Discovery of Novel Chinese Medicine Compounds Targeting 3CL Protease by Virtual Screening and Molecular Dynamics Simulation.

The transmission and infectivity of COVID-19 have caused a pandemic that has lasted for several years. This is due to the constantly changing variants and subvariants that have evolved rapidly from SARS-CoV-2. To discover drugs with therapeutic potential for COVID-19, we focused on the 3CL protease (3CLpro) of SARS-CoV-2, which has been proven to be an important target for COVID-19 infection. Computational prediction techniques are quick and accurate enough to facilitate the discovery of drugs against the 3CLpro of SARS-CoV-2. In this paper, we used both ligand-based virtual screening and structure-based virtual screening to screen the traditional Chinese medicine small molecules that have the potential to target the 3CLpro of SARS-CoV-2. MD simulations were used to confirm these results for future in vitro testing. MCCS was then used to calculate the normalized free energy of each ligand and the residue energy contribution. As a result, we found ZINC15676170, ZINC09033700, and ZINC12530139 to be the most promising antiviral therapies against the 3CLpro of SARS-CoV-2.

Orbit-Engineered Anisotropic Magnetoresistive Effect for Constructing a Magnetic Sensor with Ultrahigh Sensitivity.

A strong anisotropic magnetoresistance (AMR) effect induced by spin-orbit coupling is the basis for constructing a highly sensitive and reliable magnetic sensor. Presently, effective AMR enhancement in traditional films focuses on the modulation of the lattice or charge degree of freedom, leading to a general AMR ratio below 4%. Here, we demonstrate a different strategy to strengthen the AMR effect by tuning the orbital degree of freedom. By inserting an oxygen-affinitive Hf layer into a Ta/MgO/NiFe/MgO/Ta multilayer film, Fe-O orbital hybridization at the MgO/NiFe interface was modulated to trigger an effective orbital reconfiguration of Fe. In turn, the number of holes in the in-plane symmetric d orbits of Fe increased substantially, facilitating the s-d electron scattering to enhance the AMR ratio to 4.8%. By further micromachining the film into a Wheatstone bridge, we constructed a sensing element that displayed an ultrahigh sensitivity of 2.7 mV/V/Oe and a low noise detectability of 0.8 nT/√Hz. These findings help to advance the development of orbit-governed AMR sensors and provide an alternative method for tuning other orbit-related physical effects.

Controlled Switching of the Number of Skyrmions in a Magnetic Nanodot by Electric Fields.

Magnetic skyrmions are topological swirling spin configurations that hold promise for building future magnetic memories and logic circuits. Skyrmionic devices typically rely on the electrical manipulation of a single skyrmion, but controllably manipulating a group of skyrmions can lead to more compact and memory-efficient devices. Here, an electric-field-driven cascading transition of skyrmion clusters in a nanostructured ferromagnetic/ferroelectric multiferroic heterostructure is reported, which allows a continuous multilevel transition of the number of skyrmions in a one-by-one manner. Most notably, the transition is non-volatile and reversible, which is crucial for multi-bit memory applications. Combined experiments and theoretical simulations reveal that the switching of skyrmion clusters is induced by the strain-mediated modification of both the interfacial Dzyaloshinskii-Moriya interaction and effective uniaxial anisotropy. The results not only open up a new direction for constructing low-power-consuming, non-volatile, and multi-bit skyrmionic devices, but also offer valuable insights into the fundamental physics underlying the voltage manipulation of skyrmion clusters.

Photopolymerized superhydrophobic hybrid coating enabled by dual-purpose tetrapodal ZnO for liquid/liquid separation.

Low-cost and scalable superhydrophobic coating methods provide viable approaches for energy-efficient separation of immiscible liquid/liquid mixtures. A scalable photopolymerization method is developed to functionalize porous substrates with a hybrid coating of tetrapodal ZnO (T-ZnO) and polymethacrylate, which exhibits simultaneous superhydrophobicity and superoleophilicity. Here, T-ZnO serves dual purposes by (i) initiating radical photopolymerization during the fabrication process through a hole-mediated pathway and (ii) providing a hierarchical surface roughness to amplify wettability characteristics and suspend liquid droplets in the metastable Cassie-Baxter regime. Photopolymerization provides a means to finely control the conversion and spatial distribution of the formed polymer, whilst allowing for facile large-area fabrication and potential coating on heat-sensitive substrates. Coated stainless-steel meshes and filter papers with desired superhydrophobic/superoleophilic properties exhibit excellent performance in separating stratified oil/water, oil/ionic-liquid, and water/ionic-liquid mixtures as well as water-in-oil emulsions. The hybrid coating demonstrates desired mechanical robustness and chemical resistance for their long-term application in large-scale energy-efficient separation of immiscible liquid/liquid mixtures.

Mechanism of Nitrogen-Doped Ti3C2 Quantum Dots for Free-Radical Scavenging and the Ultrasensitive H2O2 Detection Performance.

MXene quantum dots feature favorable biological compatibility and superior optical properties, offering great potential for biomedical applications such as reactive oxygen species (ROS) scavenging and fluorescence sensing. However, the ROS scavenging mechanism is still unclear and the MXene-based materials for ROS sensing are still scarce. Here, we report a nitrogen-doped titanium carbide quantum dot (N-Ti3C2 QD) antioxidant with effective ROS scavenging ability. The doped nitrogen atoms promote the electrochemical interaction between N-Ti3C2 QDs and free radicals and thus enhance their antioxidant performance. Density functional theory (DFT) simulations reveal the hydroxyl radical quenching process and confirm that the doped N element promotes the free-radical absorption ability, especially for -F and -O functional groups in N-Ti3C2 QDs. Furthermore, N-Ti3C2 QDs show rapid, accurate, and remarkable sensitivity to hydrogen peroxide in the range of 5 nM-5.5 µM with a limit of detection of 1.2 nM within 15 s, which is the lowest detection limit of the existing fluorescent probes up to now. Our results provide a new category of antioxidant materials, a real-time hydrogen peroxide sensing probe, promoting the research and development of MXene in bioscience and biotechnology.

Enhanced negative magnetoresistance near the charge neutral point in Cr doped topological insulator.

Negative magnetoresistance (MR) is not only of great fundamental interest for condensed matter physics and materials science, but also important for practical applications, especially magnetic data storage and sensors. However, the microscopic origin of negative MR is still elusive and the nature of the negative MR in magnetic topological insulators has still not been completely elucidated. Here, we report magnetotransport studies on Cr doped (Bi1-x Sb x )2Te3 topological insulator thin films grown by magnetron sputtering. At the temperature of 2 K, a giant negative MR reaching 61% is observed at H = 2 T. We show that the negative MR is closely related to the position of the Fermi level, and it reaches the maximum when the Fermi level is gated near the charge neutral point. We attribute these results to the Coulomb potential due to the random composition fluctuations in Cr doped (Bi1-x Sb x )2Te3. Our results provide a deeper insight into the mechanism of negative MR, and are helpful to realize the quantum anomalous Hall effect in the sputtered Cr-(Bi1-x Sb x )2Te3 thin-film systems by tuning the Fermi level and reducing disorder effects.

Electric-field-driven non-volatile multi-state switching of individual skyrmions in a multiferroic heterostructure.

Electrical manipulation of skyrmions attracts considerable attention for its rich physics and promising applications. To date, such a manipulation is realized mainly via spin-polarized current based on spin-transfer torque or spin-orbital torque effect. However, this scheme is energy consuming and may produce massive Joule heating. To reduce energy dissipation and risk of heightened temperatures of skyrmion-based devices, an effective solution is to use electric field instead of current as stimulus. Here, we realize an electric-field manipulation of skyrmions in a nanostructured ferromagnetic/ferroelectrical heterostructure at room temperature via an inverse magneto-mechanical effect. Intriguingly, such a manipulation is non-volatile and exhibits a multistate feature. Numerical simulations indicate that the electric-field manipulation of skyrmions originates from strain-mediated modification of effective magnetic anisotropy and Dzyaloshinskii-Moriya interaction. Our results open a direction for constructing low-energy-dissipation, non-volatile, and multistate skyrmion-based spintronic devices.

Spin-polarized quantum transport in Si dangling bond wires.

We report theoretical modeling of spin-dependent quantum transport properties of dangling bond wires (DBWs) on the Si(100)-2 × 1:H surface. A single spin-polarized dangling bond center (DBC) near the DBW may strongly affect transport as characterized by anti-resonances or dips in the transmission spectra. Such spin-dependent gating can be effective up to a distance of 1.5 nanometer between the DBW and the DBC. At the energies where anti-resonances occur, the scattering states of the system are found to be "attracted" to the DBC - rather than moving forward to the existing electrode. The variety of gating effects can be well organized by a physical picture, i.e. a strong hybridization or interaction between the spin-polarized DBW and DBC occurs with the same spin polarization (at DBW and DBC) and at similar energy. The sharp spin-resolved anti-resonance in the DBW gives rise to a spin-filtering effect up to 100% efficiency.

Switchable Magnetic Anisotropy of Ferromagnets by Dual-Ion-Manipulated Orbital Engineering.

Tailoring magnetic anisotropy of ferromagnetic films is a critical issue in constructing energy-efficient and high-density magnetic memory devices. Presently, the effective tunability was focused on a single-ion-manipulated electronic structure evolution. Here, we reported a new strategy of dual-ion-tuned orbital structure and magnetic anisotropy of ferromagnetic films. N-doped Fe/MgO bilayer films were deposited on shape memory alloy substrates which can generate a significant lattice strain on the films. Before the N ions participate into the manipulation, the Fe/MgO film shows an in-plane magnetic anisotropy, which may be due to excessive Fe-O orbital hybridization. Interestingly, the N and O ions synergistically manipulate electronic coordination of the Fe layer, which can be further modified by the lattice strain through a charge transfer among N-Fe-O. Under such effect, the magnetic anisotropy of the film is switchable from in-plane to perpendicular magnetic anisotropy (PMA). The X-ray line dichroism (XLD) characterization reveals that the anisotropy regulation is related to Fe 3d orbital evolution: N-Fe orbital hybridization promotes the Fe dz2 orbital occupation effectively, which is beneficial in increasing PMA by strengthening Fe-O orbital hybridization along the out-of-plane direction. However, the compressive strain induces a N-Fe-O charge transfer and reduces the Fe dz2 electronic occupation, which weakens the PMA of films. These findings provide a new dimensionality for regulating orbital performance of ferromagnetic materials and developing strain-assisted memory devices.

Tunable Giant Anomalous Hall Angle in Perpendicular Multilayers by Interfacial Orbital Hybridization.

A spintronic device based on the spin-dependent Hall effect has attracted great interest because of its great potential applications in the multivalue storage and logic gate, which is a promising candidate to break the bottleneck of the information industry in the big data period. It is a technological challenge to implant spintronic devices into semiconductor integrated circuits. The anomalous Hall angle (θ), defined as the deviation of the electron flow from the current direction, is the key parameter to evaluate the capacity of Hall device compatibility. However, the bottleneck for the device is low θ (less than 5%) at room temperature (RT), making it difficult to directly complement with the semiconductor circuit which limits its potential application. Here, we report a simple perpendicular multilayered structure with θ up to 5.1% at RT. Wide working temperature (250-350 K) across RT for our samples will accelerate the potential applications in spintronic memory. A giant Hall angle at RT originates from the enhanced side-jump scattering at the atomic-scale-modified interfacial structure. The high θ at RT together with wide working temperature is practically significant and may provide the way for further 3D spintronic devices based on the spin-dependent Hall effect with ultrahigh storage density and ultralow power consumption.

The relationship between the asymmetric magnetoresistive effect and the magnetocaloric effect in Ni43Co7Mn39-xCrxSn11 Heusler alloys.

The correlation between the magnetocaloric effect and magnetotransport property was investigated in Ni43Co7Mn39-xCrxSn11 Heusler alloys. The asymmetric isothermal-magnetoresistance around the phase transformation temperature was observed, from which a parameter γ, determined as the ratio of the asymmetric magnetoresistance to the temperature coefficient of resistance, is proposed. According to Maxwell's equation, the parameter γ is analyzed to be equivalent to the transformation temperature change induced by a magnetic field in martensitic transformation. This finding is confirmed by experimental results. In addition, the γ values can be used to estimate the magnetic entropy change of the martensitic transformation directly without measuring the comprehensive temperature dependence of magnetization curves.

Construction of a Room-Temperature Pt/Co/Ta Multilayer Film with Ultrahigh-Density Skyrmions for Memory Application.

Magnetic skyrmions are chiral quasiparticles that show promise for storage of information. At present, the achievable skyrmion density (ηSk) is generally low (10-20 µm-2) because of the lack of effective manipulation. Here, both the magnetic anisotropy ( Keff) and interfacial Dzyaloshinskii-Moriya interaction (DMI) of [Pt/Co/Ta] n multilayer films are elaborately modulated by changing the Co thickness ( tCo) to study the ηSk dependence of intrinsic properties of the films systematically. The experimental and simulated results confirm that both the DMI and Keff have significant modifications on ηSk, and their respective contributions vary with tCo. Only when the magnetic anisotropy transits from out-of-plane to in-plane at an appropriate tCo range (1.8-2.1 nm) does the Keff decrease and the DMI increase with the tCo. Both the factors are favorable to the skyrmion formation and increase the density synergistically, toggling a maximal ηSk value of 45 µm-2. These findings provide a criterion for designing the high ηSk magnetic film, which may advance the development of high-density skyrmion-based magnetic memorizers.

In situ atomic scale mechanisms of strain-induced twin boundary shear to high angle grain boundary in nanocrystalline Pt.

Twin boundary can both strengthen and soften nanocrystalline metals and has been an important path for improving the strength and ductility of nano materials. Here, using in-lab developed double-tilt tensile stage in the transmission electron microscope, the atomic scale twin boundary shearing process was in situ observed in a twin-structured nanocrystalline Pt. It was revealed that the twin boundary shear was resulted from partial dislocation emissions on the intersected {111} planes, which accommodate as large as 47% shear strain. It is uncovered that the partial dislocations nucleated and glided on the two intersecting {111} slip planes lead to a transition of the original <110> symmetric tilt ∑3/(111) coherent twin boundary into a <110> symmetric tilt ∑9/(114) high angle grain boundary. These results provide insight of twin boundary strengthening mechanisms for accommodating plasticity strains in nanocrystalline metals.

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory.

Conductive bridge random access memory (CBRAM) has been extensively studied as a next-generation non-volatile memory. The conductive filament (CF) shows rich physical effects such as conductance quantization and magnetic effect. But so far, the study of filaments is not very sufficient. In this work, Co/HfO2/Pt CBRAM device with magnetic CF was designed and fabricated. By electrical manipulation with a partial-RESET method, we controlled the size of ferromagnetic metal filament. The resistance-temperature characteristics of the ON-state after various partial-RESET behaviors have been studied. Using two kinds of magnetic measurement methods, we measured the anisotropic magnetoresistance (AMR) of the CF at different temperatures to reflect the magnetic structure characteristics. By rotating the direction of the magnetic field and by sweeping the magnitude, we obtained the spatial direction as well as the easy-axis of the CF. The results indicate that the easy-axis of the CF is along the direction perpendicular to the top electrode plane. The maximum magnetoresistance was found to appear when the angle between the direction of magnetic field and that of the electric current in the CF is about 30°, and this angle varies slightly with temperature, indicating that the current is tilted.