ABSTRACT
Theoretically, tandem quantum-dot light-emitting diodes (QLEDs) hold great promise for achieving both high efficiency and high stability in display applications. However, in practice, their operational stability remains considerably inferior to that of state-of-the-art devices. In this study, we developed a new tandem structure with optimal electrical and optical performance to simultaneously improve the efficiency and stability of tandem QLEDs. Electrically, upon development of a barrier-free interconnecting layer enabled by an indium-zinc oxide bridging layer and a conductive ZnMgO layer, the driving voltage of the tandem QLEDs is remarkably reduced. Optically, upon development of a top-emitting structure and optimization of the cavity length guided by a theoretical simulation, a maximum light extraction efficiency is achieved. As a result, the red tandem QLEDs exhibit a maximum external quantum efficiency of 49.01% and a T95 lifetime at 1000 cd/m2 of >50â¯000 h, making them one of the most efficient and stable QLEDs ever reported.
ABSTRACT
As an intrinsically direct current device, quantum-dot LED cannot be directly driven by household alternating current electricity. Thus, a driver circuit is required, which increases the complexity and cost. Here, by using a transparent and conductive indium-zinc-oxide as an intermediate electrode, we develop a tandem quantum-dot LED that can be operated at both negative and positive alternating current cycles with an external quantum efficiency of 20.09% and 21.15%, respectively. Furthermore, by connecting multiple tandem devices in series, the panel can be directly driven by household alternating current electricity without the need for complicated back-end circuits. Under 220 V/50 Hz driving, the red plug-and-play panel demonstrates a power efficiency of 15.70 lm W-1 and a tunable brightness of up to 25,834 cd m-2. The developed plug-and-play quantum-dot LED panel could enable the production of cost-effective, compact, efficient, and stable solid-state light sources that can be directly powered by household alternating current electricity.
ABSTRACT
Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.
ABSTRACT
Light-matter interaction can affect the radiative decay rate of excitons and thus the emission quantum yield (QY) of quantum dots (QDs). In this work, light-matter interaction and outcoupling efficiency of QD light-emitting diodes with different structures are investigated experimentally and theoretically. We show that the external quantum efficiency (EQE) of top-emitting devices is higher than that of the bottom-emitting devices, which is mainly due to the stronger light-matter interaction and higher light outcoupling efficiency of the top-emitting structures. In addition, we show that the QY enhancement induced by light-matter interaction is more significant for low-QY QDs. Our results suggest that top-emitting structures are more powerful for improving the EQE of devices built with low-QY QDs.
