Ultralow Glassy Thermal Conductivity and Controllable, Promising Thermoelectric Properties in Crystalline o-CsCu5S3.

We thoroughly investigated the anharmonic lattice dynamics and microscopic mechanisms of the thermal and electronic transport characteristics in orthorhombic o-CsCu5S3 at the atomic level. Taking into account the phonon energy shifts and the wave-like tunneling phonon channel, we predict an ultralow κL of 0.42 w/mK at 300 K with an extremely weak temperature dependence following ∼T-0.33. These findings agree well with experimental values along with the parallel to the Bridgman growth direction. The κL in o-CsCu5S3 is suppressed down to the amorphous limit, primarily due to the unconventional Cu-S bonding induced by the p-d hybridization antibonding state coupled with the stochastic oscillation of Cs atoms. The nonstandard temperature dependence of κL can be traced back to the critical or dominant role of wave-like tunneling of phonon contributions in thermal transport. Moreover, the p-d hybridization of Cu(3)-S bonding results in the formation of a valence band with "pudding-mold" and high-degeneracy valleys, ensuring highly efficient electron transport characteristics. By properly adjusting the carrier concentration, excellent thermoelectric performance is achieved with a maximum thermoelectric conversion efficiency of 18.4% observed at 800 K in p-type o-CsCu5S3. Our work not only elucidates the anomalous electronic and thermal transport behavior in the copper-based chalcogenide o-CsCu5S3 but also provides insights for manipulating its thermal and electronic properties for potential thermoelectric applications.

Novel room-temperature full-Heusler thermoelectric material Li2TlSb.

High lattice thermal conductivity stemming from the intrinsically ordered crystal and strong interatomic bonds tends to be seen as the bottleneck for achieving excellent thermoelectric properties in full-Heusler (FH) semiconductors. In this work, we propose a novel Li-based FH compound Li2TlSb by substituting one Li atom with a Tl atom in Li3Sb. Then we systematically investigated its transport and thermoelectric properties based on self-consistent phonon (SCP) theory, electron-phonon scattering, and the Boltzmann transport equation. The theoretical calculation confirms that it exhibits outstanding mechanical properties and extreme environment adaptability. Surprisingly, the combination of an unexpectedly high spatial degeneracy and light electron dispersion at valence bands results in a high power factor in p-type systems. Additionally, the rattling behavior governed by the Tl atom and resonant bonding is responsible for ultra-low lattice thermal conductivity with 0.79 W m-1 K-1 at room temperature. Finally, a maximum p-type ZT value of 1.77 at 300 K has been achieved, which surpasses those of most of the traditional thermoelectric (TE) materials. Our results demonstrate that Li2TlSb serves as a potential candidate for room-temperature thermoelectric materials and simultaneously provides new insights for rationally designing novel FH materials in the future.

m6A methyltransferase KIAA1429 accelerates oral squamous cell carcinoma via regulating glycolysis and ferroptosis.

N6-methyladenosine (m6A) modification acts as the most prevalent modification on eukaryotic RNA, and its function on oral squamous cell carcinoma (OSCC) is still unclear. Here, the present research aimed to explore the novel function of m6A methyltransferase KIAA1429 in OSCC. Results illustrated that KIAA1429 up-regulated in the OSCC samples and cells. Gain/loss functional assays demonstrated that KIAA1429 repressed the ferroptosis of OSCC. Moreover, KIAA1429 positively accelerated the aerobic glycolysis of OSCC, including glucose uptake, lactate production, ATP level and ECAR. Mechanistically, KIAA1429 could install the m6A modification on the PGK1 mRNA, thereby up-regulating the methylated m6A level. Moreover, m6A reader YTHDF1 recognized the m6A modification site of PGK1 mRNA and enhanced its mRNA stability. Thus, KIAA1429 promoted the OSCC aerobic glycolysis and inhibited the ferroptosis of OSCC through YTHDF1-mediated PGK1 mRNA stability. Taken together, these findings reveal a novel insight for KIAA1429 on OSCC via m6A-dependent manner.

Phase transition and electronic properties of Co-As binary compounds at high pressure.

New stable stoichiometries in the Co-As system are investigated up to 100 GPa by the CALYPSO structure prediction method. In particular, we found three novel stable compounds of Co2As-Pnma, CoAs2-Pnnm, and CoAs3-C2/m at high pressure. According to the theoretical electronic band structures, the structures of Co2As-Pnma, CoAs2-Pnnm, and CoAs3-C2/m have metallic characters, and a pressure-induced electronic topological transition was found in CoAs3-C2/m, which is not shown in other stoichiometries of the Co-As system. The calculated results of the electron localization function show that there are polar covalent bond interactions between Co atoms and As atoms in CoAs2-Pnnm and CoAs3-C2/m. The present results can be helpful for understanding diverse structures and properties of Co-As binary compounds under high pressure.

First-Principles Study of High-Pressure Phase Stability and Electron Properties of Be-P Compounds.

New, stable stoichiometries in Be-P systems are investigated up to 100 GPa by the CALYPSO structure prediction method. Along with the BeP2-I41/amd structure, we identify two novel compounds of Be3P2-P-421m and Be3P2-C2/m. It should be noted that the Be-P compounds are predicted to be energetically unfavorable above 40 GPa. As can be seen, interesting structures may be experimentally synthesizable at modest pressure. Our results indicate that at 33.2 GPa, the most stable ambient-pressure tetragonal Be3P2-P-421m transitions to the monoclinic Be3P2-C2/m structure. Moreover, the predicted Be3P2-P-421m and Be3P2-C2/m phases are energetically favored compared with the Be3P2-Ia-3 structure synthesized experimentally. Electronic structure calculations reveal that BeP2-I41/amd, Be3P2-P-421m, and Be3P2-C2/m are all semiconductors with a narrow band gap. The present findings offer insight and guidance for exploration toward further fundamental understanding and potential applications in the semiconductor field.