ABSTRACT
We report the crystal structures of GaAs and GaAs/GaNAs/GaAs core-multishell nanowires (NWs). From statistical investigations by x-ray diffraction (XRD) and electron backscattered diffraction (EBSD) pattern analysis, we statistically and microscopically resolve the zinc-blende (ZB) and wurtzite (WZ) polytypism within the NWs. The XRD analysis shows a smaller fraction of WZ segments in the NWs with a larger concentration of nitrogen. With increasing nitrogen content in the GaNAs shell, the ZB peak position shifts toward higher angles and the WZ peak intensity decreases. The EBSD measurements also confirm the coexistence of ZB and WZ polytypes in all of the NWs. Their polytype switches along the length. Twin defects are observed in the ZB segments in all of the NWs. The unique grain map and grain size distribution show a decrease of the WZ segments in the GaAs/GaNAs/GaAs NW, in agreement with the XRD results. Microscopically, the local area where the polytype switches from WZ in the inner-core side to ZB toward the outer-shell surface is observed. Overall, we propose that the WZ polytype in the GaAs NWs decreases because of the strain induced by the growth of the GaNAs shell with a smaller lattice constant.
ABSTRACT
We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) structures emitting at â¼1 µm, aiming to increase their light emitting efficiency. A slight change in growth temperature is found to critically affect optical quality of the active GaNAs shell and is shown to result from suppressed formation of non-radiative recombination (NRR) centers under the optimum growth temperature. By employing the optically detected magnetic resonance spectroscopy, we identify gallium vacancies and gallium interstitials as being among the dominant NRR defects. The radiative efficiency of the NWs can be further improved by post-growth annealing at 680 °C, which removes the gallium interstitials.
ABSTRACT
We report the growth of dilute nitride GaNAs and GaInNAs core-multishell nanowires (NWs) using molecular beam epitaxy assisted by a plasma source. Using the self-catalyst vapor-liquid-solid growth mode, these NWs were grown on Si(111) and silicon on insulator substrates. The GaNAs and GaInNAs shells contain nitrogen up to 3%. Axial cross-sectional scanning transmission electron microscopy measurements and energy-dispersive x-ray spectrometry confirm the formation of the core-multishell NW structure. We obtained high-quality GaNAs NWs with nitrogen compositions up to 2%. On the other hand, GaNAs containing 3% nitrogen, and GaInNAs NWs, show distorted structures; moreover, the optical emissions seem to be related to defects. Further optimisations of the growth conditions will improve these properties, promising future applications in nanoscale optoelectronics.
ABSTRACT
Immunoperoxidase antibody (IPA) method as a titrating method of feline infectious peritonitis (FIP) virus (FIPV) was developed for titrating antibody to FIPV (IPA-titer). By this method the immune responses of the cats that had been infected with FIPV, were traced. The infected cats could be grouped into three types by their immune response to FIPV and clinical appearances. Type I cats lived for a long time, formed a major group among infected cats, had 160 to 1 x 10(4) IPA-titers, and showed healthy appearances without any changes both on autopsy and histopathologically. From among type I cats, type II cats appeared sporadically with rapid elevation of IPA titers to 3.2 x 10(5) and showing clinical signs of FIP, and died. Type III cats lived healthily for a long time with gradual elevation of IPA-titers to a plateau of about 1 x 10(5), then showed neuronal disorder of hind leg paralysis with the descending IPA-titers to 2 x 10(4), and died. Thus, typical FIP appeared as a hyper-immune disease. Other related problems are discussed.
