ABSTRACT
The organic-inorganic halide perovskite has become one of the most promising candidates for next-generation memory devices, i.e. memristors, with excellent performance and solution-processable preparation. Yet, the mechanism of resistive switching in perovskite-based memristors remains ambiguous due to a lack of in situ visualized characterization methods. Here, we directly observe the switching process of perovskite memristors with in situ photoluminescence (PL) imaging microscopy under an external electric field. Furthermore, the corresponding element composition of conductive filaments (CFs) is studied, indicating that the metallic CFs with respect to the activity of the top electrode are essential for device performance. Finally, electrochemical impedance spectroscopy (EIS) is conducted to reveal that the transition of ion states is associated with the formation of metallic CFs. This study provides in-depth insights into the switching mechanism of perovskite memristors, paving a pathway to develop and optimize high-performance perovskite memristors for large-scale applications.
ABSTRACT
Last decades have witnessed the rapid development of ultraviolet (UV) photodetectors in diversity of applications. The III-nitride semiconductor and metal halide perovskite have both performed promising UV-sensing optoelectronic properties. However, they are still suffering from either the high temperature epitaxial-growth or low photocurrent generated in UV range. In this work, we demonstrate an innovative MAPbCl3/GaN particle hybrid device with all-solution-processed deposition methods. Comparing to the control MAPbCl3photoconductors, the photo-sensing ability of the hybrid device with the optimal concentration of GaN particles is more than one order of magnitude enhanced, and report a responsivity of 86 mA W-1, a detectivity of 3.1 × 1011Jones and a rise/fall time of 1.1/10.7 ms at 360 nm. The photocurrent increment could be attributed to the enhanced UV absorption of GaN particles and facilitated charge separation and photoconductive gain at MAPbCl3/GaN heterojunction. This work paves a pathway towards the large-scale low-cost UV photodetectors in versatile applications.
ABSTRACT
Lead halide perovskites always emerge complex interactions among different elemental ions, which lead to multiple intrinsic imperfections. Elemental defects, such as amine, Pb, and I vacancies at A-, B-, and X-sites, are main issues to deteriorate perovskite solar cells (PSCs). Unfortunately, most previous passivators can only temporarily fix partial inactive vacancies as sacrificial agents. Herein, we propose a recovery agent, ferrocene (Fc), which can form a one-dimensional perovskite with adequate steric cavities and suitable dissociation energy to recover all elemental defects back to active light-harvesting perovskites, and regenerate Fc itself meanwhile. Based on this perpetual chain-reaction cycle, corresponding PSCs maintain >10 000-hour lifetime in inert condition and >1000-hour durabilities under various extreme environments, including continuous 85 °C heating, 50 % relative humidity wetting, and 1-sun light soaking.
ABSTRACT
Halide perovskites with low-dimensionalities (2D or quasi-2D) have demonstrated outstanding stabilities compared to their 3D counterparts. Nevertheless, poor charge-transporting abilities of organic components in 2D perovskites lead to relatively low power conversion efficiency (PCE) and thus limit their applications in photovoltaics. Here, we report a novel hole-transporting low-dimensional (HT2D) perovskite, which can form a hole-transporting channel on the top surface of 3D perovskite due to self-assembly effects of metal halide frameworks. This HT2D perovskite can significantly reduce interface trap densities and enhance hole-extracting abilities of a heterojunction region between the 3D perovskite and hole-transporting layer. Furthermore, the posttreatment by HT2D can also reduce the crystal defects of perovskite and improve film morphology. As a result, perovskite solar cells (PSCs) can effectively suppress nonradiative recombination, leading to an increasement on photovoltage to >1.20 V and thus achieving >20% power conversion efficiency and >500 h continuous illumination stability. This work provides a pathway to overcome charge-transporting limitations in low-dimensional perovskites and delivers significant enhancements on performance of PSCs.
ABSTRACT
The preparation of high-quality perovskite films is important for achieving high-performance perovskite solar cells (PSCs). The effective balance between solvent and antisolvent is an essential factor for regulating high-quality perovskite film during the spin-coating and thermal-annealing steps. In this work, a greener, nonhalogenated, nontoxic bifunctional (anti)solvent, methyl benzoate (MB), is developed not only as an antisolvent to rapidly generate crystal seeds at the perovskite spin-coating step, but also as a digestive-ripening solvent for the perovskite precursors, which can prevent the loss of organic components during the thermal-annealing stage and effectively suppress the formation of miscellaneous lead halide phases. As a result, this novel bifunctional (anti)solvent is employed in planar n-i-p PSCs for engineering high-quality perovskite layers and thus achieving a power conversion efficiency up to 22.37% with negligible hysteresis and >1300 h stability. Moreover, due to the high boiling point and low-volatility characteristic of MB, high-performance PSCs are achieved reproducibly at different operating temperatures (22-34 °C). Therefore, this developed bifunctional solvent system can provide a promising platform toward globally upscaling and commercializing PSCs in all seasons and regions.
