ABSTRACT
We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers' non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering.
ABSTRACT
The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5×10(11) s(-1) and 1.1×10(-10) cm(3) s(-1) for the impurity-assisted recombination and Auger ionization, respectively.
ABSTRACT
We develop an analytical model based on the WKB approach to evaluate the experimental results of the femtosecond pump-probe measurements of the transmittance and reflectance obtained on thin membranes of porous silicon. The model allows us to retrieve a pump-induced nonuniform complex dielectric function change along the membrane depth. We show that the model fitting to the experimental data requires a minimal number of fitting parameters while still complying with the restriction imposed by the Kramers-Kronig relation. The developed model has a broad range of applications for experimental data analysis and practical implementation in the design of devices involving a spatially nonuniform dielectric function, such as in biosensing, wave-guiding, solar energy harvesting, photonics and electro-optical devices.
ABSTRACT
We study electronic transport in a Luttinger liquid with an embedded impurity, which is either a weak scatterer (WS) or a weak link (WL), when interacting electrons are coupled to one-dimensional massless bosons (e.g., acoustic phonons). We find that the duality relation, ΔWSΔWL=1, between scaling dimensions of the electron backscattering in the WS and WL limits, established for the standard Luttinger liquid, holds in the presence of the additional coupling for an arbitrary fixed strength of boson scattering from the impurity. This means that at low temperatures such a system remains either an ideal insulator or an ideal metal, regardless of the scattering strength. On the other hand, when fermion and boson scattering from the impurity are correlated, the system has a rich phase diagram that includes a metal-insulator transition at some intermediate values of the scattering.
ABSTRACT
We obtain the exact asymptotic result for the disorder-averaged probability distribution function for a random walk in a biased Sinai model and show that it is characterized by a creeping behavior of the displacement moments with time,
ABSTRACT
We have studied low-temperature properties of interacting electrons in a one-dimensional quantum wire (Luttinger liquid) side-hybridized with a single-level impurity. The hybridization induces a backscattering of electrons in the wire which strongly affects its low-energy properties. Using a one-loop renormalization group approach valid for a weak electron-electron interaction, we have calculated a transmission coefficient through the wire, T(epsilon), and a local density of states, nu(epsilon) at low energies epsilon. In particular, we have found that the antiresonance in T(epsilon) has a generalized Breit-Wigner shape with the effective width Gamma(epsilon) which diverges at the Fermi level.