ABSTRACT
Boron at room temperature is insulating and therefore conventionally sputtered using radio-frequency power supplies including their power-matching networks. In this contribution, we show that through a suitable ignition assistance, via temporary application of a high voltage (â¼600 V) to the substrate holder or auxiliary electrode, the magnetron discharge can be ignited using a conventional mid-frequency power supply without matching network. Once the discharge is ignited, the assisting voltage can be reduced to less than 50 V, and after the boron target surface is at elevated temperature, thereby exhibiting sufficient conductivity, the assisting voltage can be turned off. The deposition of boron and boron nitride films has been demonstrated with a deposition rate of approximately 400 nm/h for a power of 250 W.
