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Hydrogen solubility and network stability in amorphous silicon.

Acco S; Williamson DL; Stolk PA; Saris FW; van den Boogaard MJ; Sinke WC; van der Weg WF; Roorda S; Zalm PC.

Phys Rev B Condens Matter ; 53(8): 4415-4427, 1996 Feb 15.

Article in English | MEDLINE | ID: mdl-9983995

Diffusion in strained Si(Ge).

Cowern NE; Zalm PC; van der Sluis P; Gravesteijn DJ; de Boer WB.

Phys Rev Lett ; 72(16): 2585-2588, 1994 Apr 18.

Article in English | MEDLINE | ID: mdl-10055921

Reactions of point defects and dopant atoms in silicon.

Cowern NE; van de Walle GF; Zalm PC; Oostra DJ.

Phys Rev Lett ; 69(1): 116-119, 1992 Jul 06.

Article in English | MEDLINE | ID: mdl-10046203

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