Non-topographic current contrast in scanning field emission microscopy.

In scanning field emission microscopy (SFEM), a tip (the source) is approached to few (or a few tens of) nanometres distance from a surface (the collector) and biased to field-emit electrons. In a previous study (Zanin et al. 2016 Proc. R. Soc. A 472, 20160475. (doi:10.1098/rspa.2016.0475)), the field-emitted current was found to change by approximately 1% at a monatomic surface step (approx. 200 pm thick). Here we prepare surface domains of adjacent different materials that, in some instances, have a topographic contrast smaller than 15 pm. Nevertheless, we observe a contrast in the field-emitted current as high as 10%. This non-topographic collector material dependence is a yet unexplored degree of freedom calling for a new understanding of the quantum mechanical tunnelling barrier at the source site that takes into account the properties of the material at the collector site.

Role of surface microgeometries on electron escape probability and secondary electron yield of metal surfaces.

The influence of microgeometries on the Secondary Electron Yield (SEY) of surfaces is investigated. Laser written structures of different aspect ratio (height to width) on a copper surface tuned the SEY of the surface and reduced its value to less than unity. The aspect ratio of microstructures was methodically controlled by varying the laser parameters. The results obtained corroborate a recent theoretical model of SEY reduction as a function of the aspect ratio of microstructures. Nanostructures - which are formed inside the microstructures during the interaction with the laser beam - provided further reduction in SEY comparable to that obtained in the simulation of structures which were coated with an absorptive layer suppressing secondary electron emission.

Thirty per cent contrast in secondary-electron imaging by scanning field-emission microscopy.

We perform scanning tunnelling microscopy (STM) in a regime where primary electrons are field-emitted from the tip and excite secondary electrons out of the target-the scanning field-emission microscopy regime (SFM). In the SFM mode, a secondary-electron contrast as high as 30% is observed when imaging a monoatomic step between a clean W(110)- and an Fe-covered W(110)-terrace. This is a figure of contrast comparable to STM. The apparent width of the monoatomic step attains the 1 nm mark, i.e. it is only marginally worse than the corresponding width observed in STM. The origin of the unexpected strong contrast in SFM is the material dependence of the secondary-electron yield and not the dependence of the transported current on the tip-target distance, typical of STM: accordingly, we expect that a technology combining STM and SFM will highlight complementary aspects of a surface while simultaneously making electrons, selected with nanometre spatial precision, available to a macroscopic environment for further processing.

Critical exponents and scaling invariance in the absence of a critical point.

The paramagnetic-to-ferromagnetic phase transition is classified as a critical phenomenon due to the power-law behaviour shown by thermodynamic observables when the Curie point is approached. Here we report the observation of such a behaviour over extraordinarily many decades of suitable scaling variables in ultrathin Fe films, for certain ranges of temperature T and applied field B. This despite the fact that the underlying critical point is practically unreachable because protected by a phase with a modulated domain structure, induced by the dipole-dipole interaction. The modulated structure has a well-defined spatial period and is realized in a portion of the (T, B) plane that extends above the putative critical temperature, where thermodynamic quantities do not display any singularity. Our results imply that scaling behaviour of macroscopic observables is compatible with an avoided critical point.

Scaling theory of electric-field-assisted tunnelling.

Recent experiments report the current (I) versus voltage (V) characteristics of a tunnel junction consisting of a metallic tip placed at a distance d from a planar electrode, d varying over six orders of magnitude, from few nanometres to few millimetres. In the 'electric-field-assisted' (or 'field emission') regime, as opposed to the direct tunnelling regime used in conventional scanning tunnelling microscopy, all I-V curves are found to collapse onto one single graph when d is suitably rescaled, suggesting that the current I=I(V,d) is in reality a generalized homogeneous function of one single variable, i.e. [Formula: see text], where λ being some characteristic exponent and [Formula: see text] being a scaling function. In this paper, we provide a comprehensive explanation-based on analytical arguments, numerical simulations and further experimental results-for the scaling behaviour that we show to emerge for a variety of tip-plane geometries and thus seems to be a general feature of electric-field-assisted tunnelling.