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1.

Charge of the DX ground state in Ga1-xAlxAs.

Bourgoin JC; Zazoui M.

Phys Rev B Condens Matter ; 47(23): 15939-15941, 1993 Jun 15.

Article in English | MEDLINE | ID: mdl-10005995

2.

Electron emission from defects in multiband semiconductors.

Zazoui M; Dontchev V; Bourgoin JC.

Phys Rev B Condens Matter ; 47(8): 4296-4300, 1993 Feb 15.

Article in English | MEDLINE | ID: mdl-10006575

3.

Electron-irradiation-induced defects in Si-Ge alloys.

Goubet JJ; Stievenard D; Mathiot D; Zazoui M.

Phys Rev B Condens Matter ; 46(16): 10113-10118, 1992 Oct 15.

Article in English | MEDLINE | ID: mdl-10002850

4.

Carrier capture on defects in multiband semiconductors.

Bourgoin JC; Zazoui M.

Phys Rev B Condens Matter ; 45(19): 11324-11327, 1992 May 15.

Article in English | MEDLINE | ID: mdl-10001060

5.

Nature of the DX center in Ga1-xAlxAs.

Zazoui M; Feng SL; Bourgoin JC.

Phys Rev B Condens Matter ; 44(19): 10898-10900, 1991 Nov 15.

Article in English | MEDLINE | ID: mdl-9999120

6.

Hole-capture cross section of DX centers in Ga1-xAlxAs.

Zaidi MA; Maaref H; Zazoui M; Bourgoin JC.

Phys Rev B Condens Matter ; 44(15): 7987-7992, 1991 Oct 15.

Article in English | MEDLINE | ID: mdl-9998729

7.

von Bardeleben HJ; Zazoui M; Alaya S; Gibart P.

Phys Rev B Condens Matter ; 42(2): 1500-1503, 1990 Jul 15.

Article in English | MEDLINE | ID: mdl-9995578

8.

Energy level associated with the DX center in Ga1-xAlxAs.

Zazoui M; Feng SL; Bourgoin JC.

Phys Rev B Condens Matter ; 41(12): 8485-8492, 1990 Apr 15.

Article in English | MEDLINE | ID: mdl-9993174