ABSTRACT
In-situ Optical Emission Spectroscopy (OES) combined with quantum chemical calculations was used as a powerful tool to find out the exited reactive species existing in plasma discharge during the process of lead sulfide chalcogenide materials deposition. Low temperature nonequilibrium RF (40.68 MHz) plasma at low pressure (0.1 Torr) was employed for initiation of chemical interaction between precursors in the gas phase. Only high-pure elements were utilized as the initial substances. The ration between starting materials in the gas phase and power included into the plasma discharge were the variables. The mechanism of the plasma-chemical reaction was assumed and discussed. The stoichiometry and morphology of the surface of the as-deposited materials were studied by different analytical techniques.
ABSTRACT
AsS chalcogenide films, where As content is 60-40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV-visible-NIR region in the range from 0.2 to 2.5µm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20µm) in comparison with the "usual" AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications.
ABSTRACT
AsxTe100-x amorphous films of different chemical content were prepared by Plasma-Enhanced Chemical Vapor Deposition (PECVD). For the first time the optical properties of As-Te chalcogenide materials have been measured in UV-VIS-IR ranges (from 0.2 to 25µm) for a very wide range of chemical compositions (20-80at.% As). As-Te films have been tuned from 0.80 to 1.10eV. The IR results obtained have been juxtaposed with the Raman spectroscopy findings to establish the correlation between optical and structural properties of the materials developed. Reversible and irreversible changes in the phase composition of the As-Te films under annealing of the surface by laser irradiation have been demonstrated and studied. In order to determine the potential areas of application of the prepared As-Te films the thermal and photo sensitivity has been also investigated.
