ABSTRACT
We demonstrate a unidirectional ring diode laser based on hybrid integration of a hook-shaped traveling-wave semiconductor optical amplifier (SOA) and a Taiji ring resonator. The additional crossover bending waveguide inside the silicon nitride Taiji ring introduces a non-reciprocal loss in the laser cavity while the gain is provided by a multiple depth etched hook-shaped SOA. We present the detailed design flow for both active and passive components of the unidirectional hybrid diode laser. This work paves the way to use a hook-shaped SOA-based hybrid platform for various applications including optical sensing, all-optical switching, photonic memories, and topological optics.
ABSTRACT
Scaling up the power of on-chip diode lasers is of great importance for many emerging applications, such as integrated nonlinear optics, remote sensing, free space communication, infrared countermeasure, and light detection and ranging (LIDAR). In this manuscript, we introduce and demonstrate photonic integrated circuits (PIC) based beam combining methods to create power scalable, integrated direct diode laser systems. Traditional laser beam combining, including coherent beam combining (CBC) and wavelength beam combining (WBC), usually requires free space or fiber optical components, leading to bulky and complex systems. Instead, PIC based beam combining methods can greatly reduce the cost, size, weight, and power consumption (CSWaP) of next generation direct diode laser systems. We experimentally demonstrate four channel chip-scale CBC and WBC with watt-level on-chip power by using III/V-Si3N4 hybrid integration. Our results show that PIC based beam combining is very suitable for power scaling in a chip-scale platform.
ABSTRACT
The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0 × 1018 Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR.
ABSTRACT
In this Letter, we have demonstrated wavelength beam combining (WBC) through hybrid integration of photonic integrated circuits (PICs) to significantly reduce the size, weight, and operation power of the laser combining system. The hybrid integration WBC includes III/V semiconductor optical amplifiers (SOAs), which provide gain, and the silicon nitride PICs, which perform as the external cavity. We first show that the arrayed waveguide grating (AWG) -based hybrid laser defines the lasing wavelength through the AWG passband. We then demonstrate that the AWG successfully forms multiple channel lasers by combining SOAs in the hybrid platform.
ABSTRACT
The basic principle and method to generate structural color from the photoresist grating of the multilayer dielectric diffraction grating are introduced. Rigorous coupled-wave analysis is used for computation with the open software RCWA-1D. The relationships between the characteristics of the photoresist and the structural color are explained. This paper discusses the effect of light source characteristics on the duty cycle color resolution, indicating that TE polarization is better than TM polarization, and the FWHM should be sufficiently large with an optimized value for the incident angle.
