Controllable synthesize of ZnS/PbS nanostructure and their structural and morphological properties.

ZnS is an appealing material with wide potential applications in optoelectronics, sensors, and photocatalysis due to its fascinating properties, low cost, and eco-friendly. In this paper, we report the synthesis of ZnS nanowires and nanorods via a simple thermal-evaporation method using different concentrations of PbS as a dopant. The prepared nanostrutures were investigated in detalis using a scanning electron microscopy (SEM), X-ray diffraction (XRD), and high resolution transmission electron microscopy (HRTEM). The results show that the fabricated ZnS nanowire/nanorod has a wurtzite (hcp) structure. In addition, based on the experimental results, the growth mechanism of the prepared nanostructures is reported. X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray (EDX) mapping analyses confirmed that the ZnS nanorods were stoichiometric without impurities or defects, whereas PbS quantum dots were formed inside the high-quality nanowires. The formation mechanism of ZnS nanowires is discussed based on the vapor-liquid-solid (VLS) growth model. Results demonstrated that thermal evaporation is a simple and effective techniques for producing high-quality heterostructured ZnS nanowires with potential applications in different fields.

Deposition of ZnO thin films with different powers using RF magnetron sputtering method: Structural, electrical and optical study.

Zinc Oxide thin films at room temperature with good crystallinity quality have been deposited at different Radio Frequency powers. Magnetron sputtering technique has been carried out on glass and oriented Si(100) substrates. The film structure has been characterized by X-ray Diffraction (XRD) and MicroRaman spectroscopy, which possesses a wurtzite structure with (002) preferential orientation selecting suitable conditions. Scanning electron microscope (SEM) and atomic force microscopy (AFM) have been utilized to determine the films surface morphology. The stoichiometry has been verified by Energy dispersive X-ray spectroscopy (EDX) analysis. The optical behaviors of the deposited films have been characterized by Ultraviolet Visible (UV-Vis) (optical transmittance measurements) as well as by Photoluminance characterization. Electrical properties, Current-Voltage (I-V) and Capacitance-Voltage (C-V) have been studied in details for Zinc Oxide on Silicon film that deposited at different Radio Frequency power. The high transparency, electrical behavior and smooth surface allow to use these Zinc Oxide films in photovoltaic cells and optoelectronics application.