A novel multi-dimensional coal and gangue X-ray sorting algorithm based on CdZnTe photon counting detectors.

BACKGROUND: The gangue content in coal seriously affects the calorific value produced by its combustion. In practical applications, gangue in coal needs to be completely separated. The pseudo-dual-energy X-ray method does not have high sorting accuracy. OBJECTIVE: This study aims to propose a novel multi-dimensional coal and gangue X-ray sorting algorithm based on CdZnTe photon counting detectors to solve the problem of coal and gangue sorting by X-ray. METHODS: This complete algorithm includes five steps: (1) Preferred energy bins, (2) transmittance sorting, (3) one-dimensional R-value sorting, (4) two-dimensional R-value sorting, and (5) three-dimensional R-value sorting. The output range of each step is determined by prior information from 65 groups of coal and gangue. An additional 110 groups of coal and gangue are employed experimentally to validate the algorithm's accuracy. RESULTS: Compared with the 60% sorting accuracy of the Pseudo-dual-energy method, the new algorithm reached a sorting accuracy of 99%. CONCLUSIONS: Study results demonstrate the superiority of this novel algorithm and its feasibility in practical applications. This novel algorithm can guide other two-substance X-ray sorting applications based on photon counting detectors.

A novel multi-view X-ray digital imaging stitching algorithm.

BACKGROUND: In fan beam X-ray imaging applications, several X-ray images sometimes need to be stitched together into a panoramic image because of the size limitations of the detector. OBJECTIVE: This study aims to propose a novel multi-view X-ray digital imaging stitching algorithm (MVS) based on the CdZnTe photon counting linear array detectors to solve the problem of fan beam X-ray stitching deformation. METHODS: The panoramic image is generated in four steps including (1) multi-view projection data acquisition, (2) overlapping positioning, (3) weighted fusion and (4) projected pixel value calculation. Images of a globe and foot are scanned by fan beam X-rays and a CdZnTe detector. The proposed method is applied to stitch together the scanned images of the globe. Three other methods are also used for comparison. Finally, this MVS algorithm is also used in the stitching of scanned images of the foot. RESULTS: Compared with the 50% stitching accuracy of other methods, the new MVS algorithm reached a stitching accuracy of 94.4%. Image distortion on the globe and feet is also eliminated and thus image quality is significantly improved. CONCLUSIONS: This study proposes a new multi-view X-ray digital imaging stitching algorithm. Study results demonstrate the superiority of this new algorithm and its feasibility in practical applications.

Ferroelastic Domains Enhanced the Photoelectric Response in a CsPbBr3 Single-Crystal Film Detector.

The ferroic domain, in metal halide perovskites (MHPs) at a low symmetry phase, was reported to affect optoelectronic properties. Building the relationship between ferroic domains and optoelectronic properties of MHPs will be a non-trivial task for understanding the charge transport mechanism. Here, high-quality CsPbBr3 single-crystal films (SCFs) were successfully grown by a cast-capping method. Through the phase transition process by heating and cooling the sample, dense domains in CsPbBr3 SCFs were formed and observed by an in situ polarized optical microscope. These domains were identified as 90° rotation twins by electron backscattered diffraction and transmission electron microscopy. Interestingly, the photocurrent response was dramatically enhanced after introducing ferroelastic domains. The highest responsivity, external quantum efficiency, and detectivity are 380 mA/W, 130%, and 12.9 × 1010 Jones, respectively, which are surprisingly 25.03, 25, and 7.8 times higher than those of the as-grown CsPbBr3 SCF, respectively, which may be attributed to the function of the domain wall of separating electrons and holes.

Effect of Deep-Level Defects on the Performance of CdZnTe Photon Counting Detectors.

The effect of deep-level defects is a key issue for the applications of CdZnTe high-flux photon counting devices of X-ray irradiations. However, the major trap energy levels and their quantitive relationship with the device's performance are not yet clearly understood. In this study, a 16-pixel CdZnTe X-ray photon counting detector with a non-uniform counting performance is investigated. The deep-level defect characteristics of each pixel region are analyzed by the current-voltage curves (I-V), infrared (IR) optical microscope photography, photoluminescence (PL) and thermally stimulated current (TSC) measurements, which indicate that the difference in counting performance is caused by the non-uniformly distributed deep-level defects in the CdZnTe crystals. Based on these results, we conclude that the CdZnTe detectors with a good photon counting performance should have a larger Te cd 2 + and Cd vacancy-related defect concentration and a lower A-center and Tei concentration. We consider the deep hole trap Tei, with the activation energy of 0.638-0.642 eV, to be the key deep-level trap affecting the photon counting performance. In addition, a theoretical model of the native defect reaction is proposed to understand the underlying relationships of resistivity, deep-level defect characteristics and photon counting performance.

Investigation on X-Ray Photocurrent Response of CdZnTe Photon Counting Detectors.

Counting rate is an important factor for CdZnTe photon counting detectors as high-flux devices. Until recently, there has been a lack of knowledge on the relationship between X-ray photocurrent response and the photon counting performance of CdZnTe detectors. In this paper, the performance of linear array 1 × 16-pixel CdZnTe photon counting detectors operated under different applied biases is investigated. The relation between experimental critical flux and applied bias show an approximate quadratic dependence, which agrees well the theoretical prediction. The underlying relationship among X-ray photocurrents, carrier transport properties, and photon counting performance was obtained by analyzing X-ray current-voltage and time current curves. The typical X-ray photocurrent curve can be divided into three regions, which may be explained by the photoconductive gain mechanism and electric field distortion characteristics. To keep CdZnTe photon counting detectors working in a "non-polarized state", the applied bias should be set on the left side of the "valley region" (high bias direction) in the X-ray I-V curves. This provides an effective measurement for determining the proper working bias of CdZnTe detectors and screening photon counting detector crystals.

Improvement to the Carrier Transport Properties of CdZnTe Detector Using Sub-Band-Gap Light Radiation.

The effects of sub-band-gap light radiation on the performance of CdZnTe photon-counting X-ray detectors were studied using infrared light with different wavelengths in the region of 980⁻1550 nm. The performance of the detectors for X-ray detection was improved by the radiation of infrared light with the wavelengths of 1200 nm and 1300 nm. This was because the increase of the electron indirect transition, and the weakening of the built-in electric field induced by the trapped holes, reduced the drift time of the carrier, and increased the charge collection efficiency. To further analyze the intrinsic behavior of the trapped charge, the deep-level defects of CdZnTe crystal were measured by thermally stimulated current spectroscopy (TSC). The deep-level defect indicated by the trap named T4 in TSC spectra with the ionization energy of 0.43 eV should be responsible for the performance deterioration of CdZnTe detectors.

Experimental and simulation research on the screening effect of the pixelated CZT imaging detector.

Massive efforts have been made to investigate the characteristics of the CdZnTe detector under different extreme conditions. In this paper, we experimented with different radiation sources to investigate the imaging screening effect of the pixelated CdZnTe detector under ultrahigh irradiance. A donut-shaped irradiation image was obtained due to the increase in the X-ray tube current or the tube voltage. Moreover, statistical data revealed that the total count of all pixels was not significantly different, while the event-count of irradiated area pixels decreased significantly. A consequence of the screening effect was that the event counts redistributed among pixels that are located in the irradiated area, while the inner electric field was distorted. This leads to the catastrophic performance degradation of the central pixels. According to the Poisson equation, we developed a theoretical model of the CdZnTe detector using the finite element software COMSOL to enable an in-depth investigation of carrier collection in the CdZnTe crystal. A comparison between the simulations and the test results showed that pixels in the central irradiated area are completely screened under the ultrahigh irradiance because of the emergence of the relatively higher potential region, which can distort the electron drift path. Furthermore, the photon-generated signal can be collected only partly at the edge of the irradiated area, which was relatively stable because the collection area in the CdZnTe volume was relatively limited. The imaging results deduced from the simulations are well consistent with the experimental data.

Resistive switching of the HfO x /HfO2 bilayer heterostructure and its transmission characteristics as a synapse.

In this work, HfO x /HfO2 homo-bilayer structure based resistive random access memory devices were fabricated, and the resistive switching characteristics of the devices were investigated. The samples with an Ar/O2 ratio of 12 : 2 exhibited improved switching performance including better uniformity, endurance and retention, which was selected to imitate the "learning" and "forgetting" function of biological synapses. The multilevel conductance of the HfO x /HfO2 homo-bilayer structure under the model of pulse voltage suggests its potential to emulate the nonlinear transmission characteristics of the synapse, and a model of multilevel conductance of the HfO x /HfO2 homo-bilayer structure was proposed. The device conductance continuously increases (decreases) in accordance with the number of positive (negative) voltage pulses during the potentiation (depression) process, which can emulate the change of synaptic weight in a biological synapse.

Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy.

The influence of damage induced by 2MeV protons on CdZnTe radiation detectors is investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency (CCE) in irradiated region is found to be degraded above a fluence of 3.3×10(11)p/cm(2) and the energy spectrum is severely deteriorated with increasing fluence. Moreover, CCE maps obtained under the applied biases from 50V to 400V suggests that local radiation damage results in significant degradation of CCE uniformity, especially under low bias, i. e., 50V and 100V. The CCE nonuniformity induced by local radiation damage, however, can be greatly improved by increasing the detector applied bias. This bias-dependent effect of 2MeV proton-induced radiation damage in CdZnTe detectors is attributed to the interaction of electron cloud and radiation-induced displacement defects.

Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy.

To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed.

Correction: Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface.

Correction for 'Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface' by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639-2645.

Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface.

The interface layer has great significance on the potential barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 Å. During CdTe deposition, an As-Te and Ga-Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 Å) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga-Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the potential barrier height of the CdTe/GaAs heterointerface.

An Effective Approach to Improving Cadmium Telluride (111)A Surface by Molecular-Beam-Epitaxy Growth of Tellurium Monolayer.

The surface cleansing treatment of non-natural cleavage planes of semiconductors is usually performed in vacuum using ion sputtering and subsequent annealing. In this Research Article, we report on the evolution of surface atomic structure caused by different ways of surface treatment as monitored by in situ core-level photoemission measurements of Cd-4d and Te-4d atomic levels and reflection high-energy electron diffraction (RHEED). Sputtering of surface increases the density of the dangling bonds by 50%. This feature and the less than ideal ordering can be detrimental to device applications. An effective approach is employed to improve the quality of this surface. One monolayer (ML) of Te grown by the method of molecular beam epitaxy (MBE) on the target surface with heating at 300 °C effectively improves the surface quality as evidenced by the improved sharpness of RHEED pattern and a reduced diffuse background in the spectra measured by high-resolution ultraviolet photoemission spectroscopy (HRUPS). Calculations have been performed for various atomic geometries by employing first-principles geometry optimization. In conjunction with an analysis of the core level component intensities in terms the layer-attenuation model, we propose a "vacancy site" model of the modified 1 ML-Te/CdTe(111)A (2 × 2) surface.