Atomistic switch of giant magnetoresistance and spin thermopower in graphene-like nanoribbons.

We demonstrate that the giant magnetoresistance can be switched off (on) in even- (odd-) width zigzag graphene-like nanoribbons by an atomistic gate potential or edge disorder inside the domain wall in the antiparallel (ap) magnetic configuration. A strong magneto-thermopower effect is also predicted that the spin thermopower can be greatly enhanced in the ap configuration while the charge thermopower remains low. The results extracted from the tight-binding model agree well with those obtained by first-principles simulations for edge doped graphene nanoribbons. Analytical expressions in the simplest case are obtained to facilitate qualitative analyses in general contexts.

Giant magnetoresistance and spin Seebeck coefficient in zigzag α-graphyne nanoribbons.

We investigate the spin-dependent electric and thermoelectric properties of ferromagnetic zigzag α-graphyne nanoribbons (ZαGNRs) using density-functional theory combined with non-equilibrium Green's function method. A giant magnetoresistance is obtained in the pristine even-width ZαGNRs and can be as high as 10(6)%. However, for the doped systems, a large magnetoresistance behavior may appear in the odd-width ZαGNRs rather than the even-width ones. This suggests that the magnetoresistance can be manipulated in a wide range by the dopants on the edges of ZαGNRs. Another interesting phenomenon is that in the B- and N-doped even-width ZαGNRs the spin Seebeck coefficient is always larger than the charge Seebeck coefficient, and a pure-spin-current thermospin device can be achieved at specific temperatures.

Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance.

The electronic structure and conductance of substitutionally edge-doped zigzag silicene nanoribbons (ZSiNRs) are investigated using the nonequilibrium Green's function method combined with the density functional theory. Two-probe systems of ZSiNRs in both ferromagnetic and antiferromagnetic states are considered. Doping effects of elements from groups III and V, in a parallel or antiparallel magnetic configuration of the two electrodes, are discussed. By switching on and off the external magnetic field, we may convert the metallic ferromagnetic ZSiNRs into insulating antiferromagnetic ZSiNRs. In the ferromagnetic state, even- or odd-width ZSiNRs exhibit a drastically different magnetoresistance. In an odd-width edge-doped ZSiNR a large magnetoresistance occurs compared to that in a pristine ZSiNR. The situation is reversed in even-width ZSiNRs. These phenomena result from the drastic change in the conductance in the antiparallel configuration.