Rapid Fabrication of Tungsten Oxide-Based Electrochromic Devices through Femtosecond Laser Processing.

The sol-gel method is a widely adopted technique for the preparation of tungsten trioxide (WO3) materials, favored for its cost-effectiveness and straightforward production procedures. However, this method encounters challenges such as prolonged annealing periods and limited flexibility in fabricating patterned WO3 films. This study introduces a novel approach that integrates femtosecond laser processing with the sol-gel method to enhance the fabrication of WO3 films. By adjusting polyvinylpyrrolidone (PVP) concentrations during sol-gel synthesis, precise control over film thickness and optimized film properties were achieved. The innovative technique significantly reduced the annealing time required to achieve an 80% transmittance rate from 90 min to 40 min, marking a 56% decrease. Laser processing increased the surface roughness of the films from Sa = 0.032 to Sa = 0.119, facilitating enhanced volatilization of organics during heat treatment. Additionally, this method improved the transmittance modulation of the films by 22% at 550 nm compared to unprocessed counterparts. This approach not only simplifies the manufacturing process but also enhances the optical efficiency of electrochromic devices, potentially leading to broader applications and more effective energy conservation strategies.

The rise of quasi-2D Dion-Jacobson perovskites for photovoltaics.

With the advance of nanotechnology, the past couple of years have witnessed the fast development of quasi two-dimensional (2D) halide perovskites, which exhibit outstanding long-term stability against moisture and heat, compared with their three-dimensional (3D) counterparts. As one of the most common structures in 2D halide perovskites, quasi-2D Dion-Jacobson (DJ) perovskites show multiple-quantum-well structures with n layers of [BX6]4- octahedral inorganic sheets sandwiched by two layers of diammonium spacers, thus exhibiting superior structural stability due to the elimination of van der Waals gaps. Thanks to the achievement of high power conversion efficiency accompanied by impressive stability, quasi-2D DJ perovskite solar cells (PSCs) have recently drawn extensive attention in the field. This review first introduces the fundamental understanding of quasi-2D DJ halide perovskites, including their superior stability, high exciton binding energy, and compositional flexibility and tunable properties. We then summarize detailed strategies to prepare high-quality quasi-2D DJ perovskites for PSCs, encompassing compositional engineering, solvent engineering, additive addition, and annealing processes. Moreover, the surface/interface modification and 2D-3D hybrid perovskite heterojunction are also discussed, for providing strategies to optimize the fabrication of quasi-2D DJ PSCs. Lastly, current challenges and perspectives toward the future development of quasi-2D DJ perovskites for photovoltaics are outlined.

Defect Regulation of Efficient Dion-Jacobson Quasi-2D Perovskite Solar Cells via a Polyaspartic Acid Interlayer.

Interfacial modification is a promising strategy to fabricate highly efficient perovskite solar cells (PSCs). Nevertheless, research studies about optimization for the performance of Dion-Jacobson (DJ)-phase quasi-2D PSCs by underlying surface modification are rarely reported. The relevant influence of interfacial modification on defect regulation in the bulk and at the interface for PSCs is still unexplored. Herein, an interlayer of polyaspartic acid (PASP) was introduced at the interface of a hole transporting layer and a perovskite absorber to regulate both the film quality and interface property for BDA-based DJ quasi-2D PSCs (n = 5). The PASP interlayer suppressed the charge recombination, restricted the interfacial charge accumulation, and promoted the charge transport in devices and therefore improved the power conversion efficiency of PSCs from 15.03 to 17.34%. Moreover, through device simulation, it was concluded that the increase of open-circuit voltage (Voc) was mainly attributed to the suppression of interface defects, while the increase of short-circuit current (Jsc) was ascribed to the restriction of interface defects and perovskite bulk defects. The improvement of both Voc and Jsc originated from the passivation of shallow defect states. The present work provides a promising route for the fabrication of efficient quasi-2D PSCs and enriches the fundamental understanding of defect regulation on photovoltaic performance.

Metal-Free Synthesis of Boron-Doped Graphene Glass by Hot-Filament Chemical Vapor Deposition for Wave Energy Harvesting.

Property modulation of graphene glass by heteroatom doping such as boron (B) and nitrogen (N) is important to extend its practical applications. However, unlike N doping, research studies about the metal-free synthesis of B-doped graphene on glass through the chemical vapor deposition (CVD) method are rarely reported. Herein, we report a hot-filament CVD approach to prepare B-doped graphene glass using diborane (B2H6) as the B dopant. The synthesized B-doped graphene was uniform on a large-scale and composed of nanocrystalline graphene grains. By raising the B2H6 flow from 0 to 15 sccm, the B content of graphene was facilely modulated from 0 to 5.3 at. %, accompanied with the improvement of both transparency and conductivity. The B-doped graphene prepared on glass at 15 sccm B2H6 flow presented the optimal transparent conductive performance superior to those of most reported graphene glass fabricated by other state-of-the-art approaches. Furthermore, for the first time, the performance of graphene glass for wave energy harvesting has been elaborated. It was found that the output power produced by inserting graphene glass into 0.6 M sodium chloride (NaCl) solution could be improved by more than 6 times through B doping. The significant enhancement resulted from the higher waving voltage and smaller resistance of B-doped graphene on glass than the pristine ones. In addition, the waving voltage inversed the polarity after B doping, which was due to the opposite variation of surface potential of pristine and B-doped graphene after NaCl immersion. This work would pave ways for the metal-free preparation and expand the energy-harvesting applications of B-doped graphene materials.

Evolution of Structural and Electrical Properties of Carbon Films from Amorphous Carbon to Nanocrystalline Graphene on Quartz Glass by HFCVD.

Direct growth of graphene films on glass is of great importance but has so far met with limited success. The noncatalytic property of glass results in the low decomposition ability of hydrocarbon precursors, especially at reduced temperatures (<1000 °C), and therefore amorphous carbon (a-C) films are more likely to be obtained. Here, we report the hydrogen influence on the structural and electrical properties of carbon films deposited on quartz glass at 850 °C by hot-filament chemical vapor deposition (HFCVD). The results revealed that the obtained a-C films were all graphitelike carbon films. Structural transition of the deposited films from a-C to nanocrystalline graphene was achieved by raising the hydrogen dilution ratios from 10 to over 80%. On the basis of systematic structural and chemical characterizations, a schematic process with three steps including sp2 chain aggregation, aromatic ring formation, and sp3 bond etching was proposed to interpret the structural evolution. The nanocrystalline graphene films grown on glass by HFCVD exhibited good electrical performance with a carrier mobility of 36.76 cm2/(V s) and a resistivity of 5.24 × 10-3 Ω cm over an area of 1 cm2. Temperature-dependent electrical characterizations revealed that the electronic transport in carbon films was dominated by defect, localized, and extended states, respectively, when increasing the temperature from 75 to 292 K. The nanocrystalline graphene films presented higher carrier mobility and lower carrier concentration than those of a-C films, which was mainly attributed to their smaller conductive activation energy. The present investigation provides an effective way for direct growth of graphene films on glass at reduced temperatures and also offers useful insights into the understanding of structural and electrical relationship between a-C and graphene.