ABSTRACT
The electron multipliers gain is closely related to the secondary electron emission coefficient (SEE) of the emission layer materials. The SEE is closely related to the thickness of the emission layer. If the emission layer is thin, the low SEE causes the low gain of electron multipliers. If the emission layer is thick, the conductive layer can't timely supplement charge to the emission layer, the electronic amplifier gain is low too. The electron multipliers usually choose Al2O3 and MgO film as the emission layer because of the high SEE level. MgO easy deliquescence into Mg(OH)2 Mg2(OH)2CO3 and MgCO3 resulting in the lower SEE level. The SEE level of Al2O3 is lower than MgO, but Al2O3 is stable. We designed a spherical system for testing the SEE level of materials, and proposed to use low-energy secondary electrons instead of low-energy electron beam for neutralization to measuring the SEE level of Al2O3, MgO, MgO/Al2O3, Al2O3/MgO, and precisely control the film thickness by using atomic layer deposition. We propose to compare the SEE under the adjacent incident electrons energy to partition the SEE value of the material, and obtain four empirical formulas for the relationship between SEE and thickness. Since the main materials that cause the decrease in SEE are Mg2(OH)2CO3 and MgCO3, we use the C element atomic concentration measured by XPS to study the deliquescent depth of the material. We propose to use the concept of transition layer for SEE interpretation of multilayer materials. Through experiments and calculations, we put forward a new emission layer for electron multipliers, including 2-3 nm Al2O3 buffer layer, 5-9 nm MgO main-body layer, 1 nm Al2O3 protective layer or 0.3 nm Al2O3 enhancement layer. We prepared this emission layer to microchannel plate (MCP), which significantly improved the gain of MCP. We can also apply this new emission layer to channel electron multiplier and separate electron multiplier.
ABSTRACT
When the resistivity of the AZO conductive layer is within the MCP resistance requirement, the interval of the Zn content is very narrow (70-73%) and difficult to control. Aiming at the characteristics of the AZO conductive layer on the microchannel plate, an algorithm is designed to adjust the ratio of the conductive material ZnO and the high resistance material Al2O3. We put forward the concept of the working resistance of the MCP (i.e., the resistance during the electron avalanche in the microchannel). The working resistance of AZO-ALD-MCP (Al2O3/ZnO atomic layer deposition microchannel plate) was measured for the first time by the MCP resistance test system. In comparison with the conventional MCP, we found that the resistance of AZO-ALD-MCP in working state and non-working state is very different, and as the voltage increases, the working resistance significantly decreases. Therefore, we proposed a set of analytical methods for the conductive layer. We also proposed to adjust the ratio of the conductive material of the ALD-MCP conductive layer to the high-resistance material under the working resistance condition, and successfully prepared high-gain AZO-ALD-MCP. This design opens the way for finding better materials for the conductive layer of ALD-MCP to improve the performance of MCP.
