Mechanical writing of n-type conductive layers on the SrTiO3 surface in nanoscale.

The fabrication and control of the conductive surface and interface on insulating SrTiO3 bulk provide a pathway for oxide electronics. The controllable manipulation of local doping concentration in semiconductors is an important step for nano-electronics. Here we show that conductive patterns can be written on bare SrTiO3 surface by controllable doping in nanoscale using the mechanical interactions of atomic force microscopy tip without applying external electric field. The conductivity of the layer is n-type, oxygen sensitive, and can be effectively tuned by the gate voltage. Hence, our findings have potential applications in oxide nano-circuits and oxygen sensors.

Polar dependent in-plane electric transport of epitaxial ZnO thin films on SrTiO(3) substrates.

Polar (001) and nonpolar (110) ZnO epitaxial thin films were grown on SrTiO(3) substrates by the pulsed laser deposition method and the in-plane electric transport was investigated. Both films display semiconducting behavior. The polar thin films have linear I-V relations with mobility increasing almost linearly with temperature. In contrast, for nonpolar ZnO thin films, the I-V curves are symmetric and nonlinear with room temperature resistivity 30 times larger than that of polar thin films. We conclude that in nonpolar ZnO thin films the bound polarization charge induced barrier limits the carrier transport. Instead, for polar thin films, the polar effect on the in-plane transport is negligible, and the charged dislocation scattering is dominant. Our observations suggest the polar effect should be considered in the design of ZnO related devices.

Direct observation of percolation in a manganite thin film.

Upon cooling, the isolated ferromagnetic domains in thin films of La0.33Pr0.34Ca0.33MnO3 start to grow and merge at the metal-insulator transition temperature TP1, leading to a steep drop in resistivity, and continue to grow far below TP1. In contrast, upon warming, the ferromagnetic domain size remains unchanged until near the transition temperature. The jump in the resistivity results from the decrease in the average magnetization. The ferromagnetic domains almost disappear at a temperature TP2 higher than TP1, showing a local magnetic hysteresis in agreement with the resistivity hysteresis. Even well above TP2, some ferromagnetic domains with higher transition temperatures are observed, indicating magnetic inhomogeneity. These results may shed more light on the origin of the magnetoresistance in these materials.