Sliding nanomechanical resonators.

The motion of a vibrating object is determined by the way it is held. This simple observation has long inspired string instrument makers to create new sounds by devising elegant string clamping mechanisms, whereby the distance between the clamping points is modulated as the string vibrates. At the nanoscale, the simplest way to emulate this principle would be to controllably make nanoresonators slide across their clamping points, which would effectively modulate their vibrating length. Here, we report measurements of flexural vibrations in nanomechanical resonators that reveal such a sliding motion. Surprisingly, the resonant frequency of vibrations draws a loop as a tuning gate voltage is cycled. This behavior indicates that sliding is accompanied by a delayed frequency response of the resonators, making their dynamics richer than that of resonators with fixed clamping points. Our work elucidates the dynamics of nanomechanical resonators with unconventional boundary conditions, and offers opportunities for studying friction at the nanoscale from resonant frequency measurements.

Graphene-Based Nanoelectromechanical Periodic Array with Tunable Frequency.

Phononic crystals (PnCs) have attracted much attention due to their great potential for dissipation engineering and propagation manipulation of phonons. Notably, the excellent electrical and mechanical properties of graphene make it a promising material for nanoelectromechanical resonators. Transferring a graphene flake to a prepatterned periodic mechanical structure enables the realization of a PnC with on-chip scale. Here, we demonstrate a nanoelectromechanical periodic array by anchoring a graphene membrane to a 9 × 9 array of standing nanopillars. The device exhibits a quasi-continuous frequency spectrum with resonance modes distributed from ∼120 MHz to ∼980 MHz. Moreover, the resonant frequencies of these modes can be electrically tuned by varying the voltage applied to the gate electrode sitting underneath. Simulations suggest that the observed band-like spectrum provides an experimental evidence for PnC formation. Our architecture has large fabrication flexibility, offering a promising platform for investigations on PnCs with electrical accessibility and tunability.

Tunable parametric amplification of a graphene nanomechanical resonator in the nonlinear regime.

Parametric amplification is widely used in nanoelectro-mechanical systems to enhance the transduced mechanical signals. Although parametric amplification has been studied in different mechanical resonator systems, the nonlinear dynamics involved receives less attention. Taking advantage of the excellent electrical and mechanical properties of graphene, we demonstrate electrical tunable parametric amplification using a doubly clamped graphene nanomechanical resonator. By applying external microwave pumping with twice the resonant frequency, we investigate parametric amplification in the nonlinear regime. We experimentally show that the extracted coefficient of the nonlinear Duffing force α and the nonlinear damping coefficient η vary as a function of external pumping power, indicating the influence of higher-order nonlinearity beyond the Duffing (∼x 3) and van der Pol (∼[Formula: see text]) types in our device. Even when the higher-order nonlinearity is involved, parametric amplification still can be achieved in the nonlinear regime. The parametric gain increases and shows a tendency of saturation with increasing external pumping power. Further, the parametric gain can be electrically tuned by the gate voltage with a maximum gain of 10.2 dB achieved at the gate voltage of 19 V. Our results will benefit studies on nonlinear dynamics, especially nonlinear damping in graphene nanomechanical resonators that has been debated in the community over past decade.

A Suspended Silicon Single-Hole Transistor as an Extremely Scaled Gigahertz Nanoelectromechanical Beam Resonator.

Suspended single-hole transistors (SHTs) can also serve as nanoelectromechanical resonators, providing an ideal platform for investigating interactions between mechanical vibrations and charge carriers. Demonstrating such a device in silicon (Si) is of particular interest, due to the strong piezoresistive effect of Si and potential applications in Si-based quantum computation. Here, a suspended Si SHT also acting as a nanoelectromechanical beam resonator is demonstrated. The resonant frequency and zero-point motion of the device are ≈3 GHz and 0.2 pm, respectively, reaching the best level among similar devices demonstrated with Si-containing materials. The mechanical vibration is transduced to electrical readout by the SHT. The signal transduction mechanism is dominated by the piezoresistive effect. A giant apparent effective piezoresistive gauge factor with strong correlation to single-hole tunneling is extracted in this device. The results show the great potential of the device in interfacing charge carriers with mechanical vibrations, as well as investigating potential quantum behavior of the vibration phonon mode.

Coherent phonon dynamics in spatially separated graphene mechanical resonators.

Vibrational modes in mechanical resonators provide a promising candidate to interface and manipulate classical and quantum information. The observation of coherent dynamics between distant mechanical resonators can be a key step toward scalable phonon-based applications. Here we report tunable coherent phonon dynamics with an architecture comprising three graphene mechanical resonators coupled in series, where all resonators can be manipulated by electrical signals on control gates. We demonstrate coherent Rabi oscillations between spatially separated resonators indirectly coupled via an intermediate resonator serving as a phonon cavity. The Rabi frequency fits well with the microwave burst power on the control gate. We also observe Ramsey interference, where the oscillation frequency corresponds to the indirect coupling strength between these resonators. Such coherent processes indicate that information encoded in vibrational modes can be transferred and stored between spatially separated resonators, which can open the venue of on-demand phonon-based information processing.

Author Correction: Strong indirect coupling between graphene-based mechanical resonators via a phonon cavity.

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Strong indirect coupling between graphene-based mechanical resonators via a phonon cavity.

Mechanical resonators are promising systems for storing and manipulating information. To transfer information between mechanical modes, either direct coupling or an interface between these modes is needed. In previous works, strong coupling between different modes in a single mechanical resonator and direct interaction between neighboring mechanical resonators have been demonstrated. However, coupling between distant mechanical resonators, which is a crucial request for long-distance classical and quantum information processing using mechanical devices, remains an experimental challenge. Here, we report the experimental observation of strong indirect coupling between separated mechanical resonators in a graphene-based electromechanical system. The coupling is mediated by a far-off-resonant phonon cavity through virtual excitations via a Raman-like process. By controlling the resonant frequency of the phonon cavity, the indirect coupling can be tuned in a wide range. Our results may lead to the development of gate-controlled all-mechanical devices and open up the possibility of long-distance quantum mechanical experiments.

Electrotunable artificial molecules based on van der Waals heterostructures.

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.

Coupling graphene nanomechanical motion to a single-electron transistor.

Graphene-based electromechanical resonators have attracted great interest recently because of the outstanding mechanical and electrical properties of graphene and their various applications. However, the coupling between mechanical motion and charge transport has not been explored in graphene. Herein, we studied the mechanical properties of a suspended 50 nm wide graphene nanoribbon, which also acts as a single-electron transistor (SET) at low temperatures. Using the SET as a sensitive detector, we found that the resonance frequency could be tuned from 82 MHz to 100 MHz and the quality factor exceeded 30 000. The strong charge-mechanical coupling was demonstrated by observing the SET induced ∼140 kHz resonance frequency shifts and mechanical damping. We also found that the SET can enhance the nonlinearity of the resonator. Our SET-coupled graphene mechanical resonator could approach an ultra-sensitive mass resolution of ∼0.55 × 10-21 g and a force sensitivity of ∼1.9 × 10-19 N (Hz)-1/2, and can be further improved. These properties indicate that our device is a good platform for both fundamental physical studies and potential applications.

Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot.

Standard semiconductor fabrication techniques are used to fabricate a quantum dot (QD) made of WS2, where Coulomb oscillations were found. The full-width-at-half-maximum of the Coulomb peaks increases linearly with temperature while the height of the peaks remains almost independent of temperature, which is consistent with standard semiconductor QD theory. Unlike graphene etched QDs, where Coulomb peaks belonging to the same QD can have different temperature dependences, these results indicate the absence of the disordered confining potential. This difference in the potential-forming mechanism between graphene etched QDs and WS2 QDs may be the reason for the larger potential fluctuation found in graphene QDs.