Self-formed asymmetric Schottky contacts between graphene and WSiGeN4.

In this paper, the electronic properties and transport characteristics of WSiGeN4/graphene heterostructures were explored by combining the quantum transport method with first-principle calculations. The band structures indicate that the heterostructures can form either p-type or n-type Schottky contacts, depending on the stacking mode. Due to the self-formed asymmetric Schottky contacts, we design an asymmetric van der Waals (vdW) metal-semiconductor-metal (MSM) structure, which exhibits a pronounced asymmetric current-voltage (I-V) curve. The corresponding physical mechanisms are attributed to carrier transport mechanisms, which are primarily governed by thermionic excitation at positive bias voltages and tunneling effects at negative bias voltages. Our study offers a viable strategy for integrating asymmetric Schottky barriers into MSM configurations, laying the groundwork for a wider range of applications in a range of Janus two-dimensional semiconductors.

Effect of Copper Doping on Electronic Structure and Optical Absorption of Cd33Se33 Quantum Dots.

The photophysical properties of Cu-doped CdSe quantum dots (QDs) can be affected by the oxidation state of Cu impurity, but disagreement still exists on the Cu oxidation state (+1 or +2) in these QDs, which is debated and poorly understood for many years. In this work, by using density functional theory (DFT)-based calculations with the Heyd-Scuseria-Ernzerhof (HSE) screened hybrid functional, we clearly demonstrate that the incorporation of Cu dopants into the surface of the magic sized Cd33Se33 QD leads to non-magnetic Cu 3d orbitals distribution and Cu+1 oxidation state, while doping Cu atoms in the core region of QDs can lead to both Cu+1 and Cu+2 oxidation states, depending on the local environment of Cu atoms in the QDs. In addition, it is found that the optical absorption of the Cu-doped Cd33Se33 QD in the visible region is mainly affected by Cu concentration, while the absorption in the infrared regime is closely related to the oxidation state of Cu. The present results enable us to use the doping of Cu impurity in CdSe QDs to achieve special photophysical properties for their applications in high-efficiency photovoltaic devices. The methods used here to resolve the electronic and optical properties of Cu-doped CdSe QDs can be extended to other II-VI semiconductor QDs incorporating transition-metal ions with variable valence.

First-Principles Study of Thermo-Physical Properties of Pu-Containing Gd2Zr2O7.

A density functional theory plus Hubbard U method is used to investigate how the incorporation of Pu waste into Gd2Zr2O7 pyrochlore influences its thermo-physical properties. It is found that immobilization of Pu at Gd-site of Gd2Zr2O7 has minor effects on the mechanical and thermal properties, whereas substitution of Pu for Zr-site results in remarkable influences on the structural parameters, elastic moduli, elastic isotropy, Debye temperature and electronic structure. The discrepancy in thermo-physical properties between Gd2-yPuyZr2O7 and Gd2Zr2-yPuyO7 may be a result of their different structural and electronic structures. This study provides a direct insight into the thermo-physical properties of Pu-containing Gd2Zr2O7, which will be important for further investigation of nuclear waste immobilization by pyrochlores.