Elevated serum uric acid to creatinine ratio is associated with adverse pregnancy outcomes: a prospective birth cohort study.

Purpose: This study evaluated the association between maternal serum uric acid-to-creatinine ratio (SUA/SCr) in the first trimester and adverse maternal and neonatal outcomes. Methods: A prospective birth cohort study was conducted between 2018 and 2021. Logistic regression models and restricted cubic splines were utilized to estimate the associations between the SUA/SCr ratio and feto-maternal pregnancy outcomes. Women were stratified according to maternal age and pre-pregnancy body mass index. Results: This study included 33,030 pregnant women with live singleton pregnancies. The overall prevalence of gestational diabetes mellitus (GDM), pregnancy-induced hypertension (PIH), cesarean delivery, preterm birth, large-for-gestational age (LGA), small-for-gestational age, and low Apgar scores were 15.18%, 7.96%, 37.62%, 4.93%, 9.39%, 4.79% and 0.28%, respectively. The highest quartile of SUA/SCr was associated with the highest risk of GDM (odds ratio [OR] 2.14, 95% CI 1.93-2.36), PIH (OR 1.79, 95% CI 1.58-2.04), cesarean delivery (OR 1.24, 95% CI 1.16-1.33), and preterm birth (OR 1.30, 95% CI 1.12-1.51). The associations between SUA/SCr with adverse pregnancy outcomes showed linear relationships except for GDM (P < 0.001 for all, P < 0.001 for non-linearity). Subgroup analyses revealed that the associations between the SUA/SCr ratio and the risks of PIH and LGA were significantly stronger in younger pregnant women (P = 0.033 and 0.035, respectively). Conclusion: Maternal SUA/SCr levels were associated positively with the risk of adverse pregnancy outcomes. Timely monitoring of SUA and SCr levels during early pregnancy may help reduce the risk of adverse pregnancy outcomes and provide a basis for interventions.

Formation of Si nanopillars through partial sacrificing in super passivation reactive ion etching.

The vertical gate-all-around (VGAA) metal-oxide-semiconductor field-effect transistor (MOSFET) holds remarkable potential in the three-dimensional (3D) integrated circuits (ICs), primarily owing to its capacity for vertical integration. The Si nanopillar, a crucial channel in the VGAA MOSFET, is conventionally shaped via the reactive ion etching (RIE) system employing SF6/O2. Past studies have indicated that high O2gas conditions in RIE often result in Si grasses irregular nanostructures, such as nanospikes on the bottom surface, due to over-passivation. However, this study revealed that ultrahigh O2proportions (>70%), especially when combined with low chamber pressure, inhibit the development of Si grasses in the RIE system (termed as super passivation). Nevertheless, this scenario leads to the segmentation of the Si nanopillar. To address this issue, a proposed partial sacrificing method, achieved by sacrificing the upper segment of the nanopillar through prolonged processing time and reduced mask size, successfully yielded Si nanopillars without Si grasses. Furthermore, an empirical model was developed to elucidate how experimental parameters influence etching characteristics, encompassing etching rate and Si nanopillar shape, through a systematic examination of the RIE etching process. This research significantly contributes to the production of VGAA MOSFETs and 3D ICs.