ABSTRACT
A series of dual-band photomultiplication (PM)-type organic photodetectors (OPDs) were fabricated by employing a donor(s)/acceptor (100:1, wt/wt) mixed layer and an ultrathin Y6 layer as the active layers, as well as by using PNDIT-F3N as an interfacial layer near the indium tin oxide (ITO) electrode. The dual-band PM-type OPDs exhibit the response range of 330-650 nm under forward bias and the response range of 650-850 nm under reverse bias. The tunable spectral response range of dual-band PM-type OPDs under forward or reverse bias can be explained well from the trapped electron distribution near the electrodes. The dark current density (JD) of the dual-band PM-type OPDs can be efficiently suppressed by employing PNDIT-F3N as the anode interfacial layer and the special active layers with hole-only transport characteristics. The light current density (JL) of the dual-band PM-type OPDs can be slightly increased by incorporating wide-bandgap polymer P-TPDs with relatively large hole mobility (µh) in the active layers. The signal-to-noise ratios of the optimized dual-band PM-type OPDs reach 100,980 under -50 V bias and white light illumination with an intensity of 1.0 mW·cm-2, benefiting from the ultralow JD by employing wide-bandgap PNDIT-F3N as the anode interfacial buffer layer and the increased JL by incorporating appropriate P-TPD in the active layers.
ABSTRACT
Broadband photomultiplication-type organic photodetectors (PM-OPDs) were prepared with PMBBDT:PY3Se-2V (1:1, wt/wt) as the absorbing layer (AL) and PC71BM:P3HT (100:5, wt/wt) as the photomultiplication layer (PML) on the basis of the sandwich structure. The incident photons from ultraviolet light to the near-infrared region can be harvested by AL. The rather less P3HT in PML can produce plenty of isolated hole traps with P3HT surrounded by PC71BM; the electron tunneling injection induced by trapped holes near the Ag electrode can lead to the photomultiplication (PM) phenomenon. The performance of PM-OPDs can be effectively improved by optimizing the AL thickness. The optimal PM-OPDs exhibit a broad spectral response from 300 to 1050 nm as well as an external quantum efficiency (EQE) of 5800% at 340 nm at 10 V bias, along with a specific detectivity (D*) of 3.78 × 1013 Jones. The spectral response of PM-OPDs is controlled by the trapped-hole distribution near the Ag electrode, primarily originating from the photogenerated holes in AL. To further optimize the spectral response of PM-OPDs, the optical filter layer (OFL) was used to manipulate light field distribution in AL. The violet, red, and near-infrared-light PM-OPDs were developed by employing different OFLs.
