ABSTRACT
Perovskite photodetectors (PPDs) offer a promising solution with low cost and high responsivity, addressing the limitations of traditional inorganic photodetectors. However, there is still room for improvement in terms of the dark current and stability of air-processed PPDs. In this study, 4,4',4''-tris(carbazol-9-yl)-triphenylamine (TCTA) was utilized as a nucleation agent to enhance the quality of perovskite films. The synergistic effect of TCTA and moisture promotes rapid nucleation of PbI2-PbCl2, resulting in an increased nucleation rate and the elimination of pinholes in the film. By employing additive engineering, we obtained a PbI2-PbCl2 layer with high coverage, leading to a low density of traps in the corresponding perovskite film. Consequently, the modified PPD exhibits a remarkable reduction in dark current density by over one order of magnitude, reaching 2.4 × 10-10 A cm-2 at -10 mV, along with a large linear dynamic range (LDR) of 183 dB. Furthermore, the resulting PPD demonstrates remarkable stability, retaining 90% of the initial external quantum efficiency (EQE) value even after continuous operation for over 3200 hours. Owing to a fast response time in the nanosecond range, the PPD could convert modulated light signals into electrical signals at a speed of 588 Kbit s-1, highlighting the great potential in the field of optical communication.
ABSTRACT
Cuprite, nominally cuprous oxide (Cu2O) but more correctly Cu2-xO, is widely used in optoelectronic applications because of its natural p-type, nontoxicity, and abundant availability. However, the photoresponsivity of Cu2O/Si photodetectors (PDs) has been limited by the lack of high-quality Cu2-xO films. Herein, we report a facile room-temperature solution method to prepare high-quality Cu2-xO films with controllable x value which were used as hole selective transport layers in crystalline n-type silicon-based heterojunction PDs. The detection performance of Cu2-xO/Si PDs exhibits a remarkable improvement via reducing the x value, resulting in the optimized PDs with high responsivity of 417 mA W-1 and fast response speed of 1.3 µs. Furthermore, the performance of the heterojunction PDs can be further improved by designing the pyramidal silicon structure, with enhanced responsivity of 600 mA W-1 and response speed of 600 ns. The superior photodetecting performance of Cu2-xO/n-Si heterojunctions is attributed to (i) the matched energy level band alignment, (ii) the low trap states in high-quality Cu2O thin films, and (iii) the excellent light trapping. We expect that the low-cost, highly efficient solution process would be of great convenience for large-scale fabrication of the Cu2-xO thin films and broaden the applications of Cu2-xO-based optoelectronic devices.
