Broadband silicon grating couplers with high efficiency and a robust design.

A record-high efficiency and bandwidth for a fiber-to-chip grating coupler have been achieved with a robust design and cost-effective fabrication on a silicon-on-insulator platform. The design optimization involves the usual geometrical parameters, period, and fill factor, and a mode matching for the fiber output and grating. The measured coupling efficiency for TE polarization and 1 dB bandwidth are -2.64 dB (54 %) per grating and 67 nm, respectively. The 3 dB bandwidth exceeds 100 nm, fully covering the C + L band. The results fill the gap between theory and experimental realization in the existing literature.

Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO2 multilayers.

This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO2 multilayers. Doped SiO/SiO2 multilayers with different P contents have been prepared by co-evaporation and subsequently annealed at different temperatures up to 1100 °C. The sample structure and the localization of P atoms were both studied at the nanoscale by scanning transmission electron microscopy and atom probe tomography. It is found that P incorporation modifies the mechanism of Si-NC growth by promoting the phase separation during the post-growth-annealing step, leading to nanocrystal formation at lower annealing temperatures as compared to undoped Si-NCs. Hence, the maximum of Si-NC related photoluminescence (PL) intensity is achieved for annealing temperatures lower than 900 °C. It is also demonstrated that the Si-NCs mean size increases in the presence of P, which is accompanied by a redshift of the Si-NC related emission. The influence of the phosphorus content on the PL properties is studied using both room temperature and low temperature measurements. It is shown that for a P content lower than about 0.1 at%, P atoms contribute to significantly improve the PL intensity. This effect is attributed to the P-induced-reduction of the number of non-radiative defects at the interface between Si-NCs and SiO2 matrix, which is discussed in comparison with hydrogen passivation of Si-NCs. In contrast, for increasing P contents, the PL intensity strongly decreases, which is explained by the growth of Si-NCs reaching sizes that are too large to ensure quantum confinement and to the localization of P atoms inside Si-NCs.

Single-walled carbon nanotube membranes as non-reflective substrates for nanophotonic applications.

We demonstrate that single-walled carbon nanotube (SWCNT) membranes can be successfully utilized as nanometer-thick substrates for enhanced visualization and facilitated study of individual nanoparticles. As model objects, we transfer optically resonant 200 nm silicon nanoparticles onto pristine and ethanol-densified SWCNT membranes by the femtosecond laser printing method. We image nanoparticles by scanning electron and bright-field optical microscopy, and characterize by linear and Raman scattering spectroscopy. The use of a pristine SWCNT membrane allows to achieve an order-of-magnitude enhancement of the optical contrast of the nanoparticle bright field image over the results shown in the case of the glass substrate use. The observed optical contrast enhancement is in agreement with the spectrophotometric measurements showing an extremely low specular reflectance of the pristine membrane (≤0.1%). Owing to the high transparency, negligibly small reflectance and thickness, SWCNT membranes offer a variety of perspective applications in nanophotonics, bioimaging and synchrotron radiation studies.

In Situ Formation of Nanoporous Silicon on a Silicon Wafer via the Magnesiothermic Reduction Reaction (MRR) of Diatomaceous Earth.

Successful direct route production of silicon nanostructures from diatomaceous earth (DE) on a single crystalline silicon wafer via the magnesiothermic reduction reaction is reported. The formed porous coating of 6 µm overall thickness contains silicon as the majority phase along with minor traces of Mg, as evident from SEM-EDS and the Focused Ion Beam (FIB) analysis. Raman peaks of silicon at 519 cm-1 and 925 cm-1 were found in both the film and wafer substrate, and significant intensity variation was observed, consistent with the SEM observation of the directly formed silicon nanoflake layer. Microstructural analysis of the flakes reveals the presence of pores and cavities partially retained from the precursor diatomite powder. A considerable reduction in surface reflectivity was observed for the silicon nanoflakes, from 45% for silicon wafer to below 15%. The results open possibilities for producing nanostructured silicon with a vast range of functionalities.