Metal-bonded perovskite lead hydride with phonon-mediated superconductivity exceeding 46 K under ambient pressure.

In the search for high-temperature superconductivity in hydrides, a plethora of multi-hydrogen superconductors have been theoretically predicted, and some have been synthesized experimentally under ultrahigh pressures of several hundred GPa. However, the impracticality of these high-pressure methods has been a persistent issue. In response, we propose a new approach to achieve high-temperature superconductivity under ambient pressure by implanting hydrogen into lead to create a stable few-hydrogen binary perovskite, Pb4H. This approach diverges from the popular design methodology of multi-hydrogen covalent high critical temperature (Tc) superconductors under ultrahigh pressure. By solving the anisotropic Migdal-Eliashberg equations, we demonstrate that perovskite Pb4H presents a phonon-mediated superconductivity exceeding 46 K with inclusion of spin-orbit coupling, which is six times higher than that of bulk Pb (7.22 K) and comparable to that of MgB2, the highestTcachieved experimentally at ambient pressure under the Bardeen, Cooper, and Schrieffer framework. The highTccan be attributed to the strong electron-phonon coupling strength of 2.45, which arises from hydrogen implantation in lead that induces several high-frequency optical phonon modes with a relatively large phonon linewidth resulting from H atom vibration. The metallic-bonding in perovskite Pb4H not only improves the structural stability but also guarantees better ductility than the widely investigated multi-hydrogen, iron-based and cuprate superconductors. These results suggest that there is potential for the exploration of new high-temperature superconductors under ambient pressure and may reignite interest in their experimental synthesis in the near future.

2D Graphene-Like Pb-Free Perovskite Semiconductor CsSb(Br1-xIx)4 with Quasi-linear Electronic Dispersion and Direct Bandgap Close to Germanium.

Thanks to its ultrahigh carrier mobility (∼104-105 cm2 V-1 s-1), graphene shows tremendous application potential in nanoelectronics, but it cannot be applied in effective field-effect transistors (FETs) because of its intrinsic gapless band structure. Thus, introducing a bandgap for graphene is a prerequisite to realize an FET for logic applications. Herein, through first-principles GW calculations, we have predicted a series of novel Dion-Jacobson (DJ) phase halide perovskite semiconductors CsSb(Br1-xIx)4 (x = 0, 0.5, 1) with the quasi-linear (graphene-like) band edge dispersion; as the best one of which, CsSbBr2I2 exhibits a direct bandgap (0.52 eV) as well as a quasi-linear electronic dispersion, yielding an ultrasmall carrier effective mass (0.03 m0) and a high estimated carrier mobility (5 × 103 cm2 V-1 s-1). This gives a significant reference to the exploration of semiconductors with excellent transport properties. Moreover, our calculations also implicate that the DJ perovskites CsSb(Br1-xIx)4 (x = 0, 0.25, 0.5, 0.75, 1) show soft and anisotropic mechanical characteristics as well as excellent electronic, transport, and optical properties, which demonstrate their multifunctional application in infrared optoelectronic, high-speed electronics, and photovoltaics.

High hydrogen production in the InSe/MoSi2N4 van der Waals heterostructure for overall water splitting.

Very recently, the septuple-atomic-layer MoSi2N4 has been successfully synthesized by a chemical vapor deposition method. However, pristine MoSi2N4 exhibits some shortcomings, including poor visible-light harvesting capability and a low separation rate of photo-excited electron-hole pairs, when it is applied in water splitting to produce hydrogen. Fortunately, we find that MoSi2N4 can be considered as a good co-catalyst to be stacked with InSe forming an efficient heterostructure photocatalyst. Here, the electronic and photocatalytic properties of the two-dimensional (2D) InSe/MoSi2N4 heterostructure have been systematically investigated by density functional theory for the first time. The results demonstrate that 2D InSe/MoSi2N4 has a type-II band alignment with a favourable direct bandgap of 1.61 eV and exhibits suitable band edge positions for overall water splitting. Particularly, 2D InSe/MoSi2N4 has high electron mobility (104 cm2 V-1 s-1) and shows a noticeable optical absorption coefficient (105 cm-1) in the visible-light region of the solar spectrum. These brilliant properties declare that 2D InSe/MoSi2N4 is a potential photocatalyst for overall water splitting.

Layered Dion-Jacobson-Type Chalcogenide Perovskite CsLaM2X7 (M = Ta/Nb; X = S/Se) with a Narrow Band Gap of ∼1 eV as a Promising Rear Cell for All-Perovskite Tandem Solar Cells.

Perovskite-perovskite tandem solar cells have bright prospects to improve the power conversion efficiency (PCE) beyond the Shockley-Queisser (SQ) limit of single-junction solar cells. The star lead-based halide perovskites are well-recognized as suitable candidates for the front cell, thanks to their suitable band gap (∼1.8 eV), strong optical absorption, and high certified PCE. However, the toxicity of lead for the front cell and the lack of a narrow band gap (∼1.1 eV) for the rear cell seriously restrict the development of the two-junction tandem cell. To break through this bottleneck, a novel Dion-Jacobson (DJ)-type (n = 2) chalcogenide perovskite CsLaM2X7 (M = Ta, Nb; X = S, Se) has been found based on the powerful first-principles and advanced many-body perturbation GW calculations. Their excellent electronic, transport, and optical properties can be summarized as follows. (1) They are stable and environmentally friendly lead-free materials. (2) The direct band gap of CsLaTa2Se7 (0.96-1.10 eV) is much smaller than those of lead-based halide perovskites and very suitable for the rear cell in the two-junction tandem cell. (3) The carrier mobility in CsLaTa2Se7 reaches 1.6 × 103 cm2 V-1 s-1 at room temperature. (4) The absorption coefficients (3-5 × 105 cm-1) are 1 order higher than that of Si (104 cm-1). (5) The estimated PCEs of the Cs2Sb2Br8-CsLaTa2Se7 tandem cell (33.3%) and the concentrator solar cell (35.8% in 100 suns) are higher than those of the best recorded GaAs-Si tandem cell (32.8%) and the perovskite-perovskite tandem solar cell (24.8%). These energetic results strongly demonstrate that the novel lead-free chalcogenide perovskites CsLaM2X7 are good candidates for the rear cell of tandem cells.

Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure.

The physical origin of the observed anomalous photoluminescence (PL) behavior, that is, the large-size graphene quantum dots (GQDs) exhibiting higher PL energy than the small ones and the broadening PL spectra from deep ultraviolet to near-infrared, has been debated for many years. Obviously, it is in conflict with the well-accepted quantum confinement. Here we shed new light on these two notable debates by state-of-the-art first-principles calculations based on many-body perturbation theory. We find that quantum confinement is significant in GQDs with remarkable size-dependent exciton absorption/emission. The edge environment from alkaline to acidic conditions causes a blue shift of the PL peak. Furthermore, carbon vacancies are inclined to assemble at the GQD edge and form the tiny edge microstructures. The bound excitons, localized inside these edge microstructures, determine the anomalous PL behavior (blue and UV emission) of large-size GQDs. The bound excitons confined in the whole GQD lead to the low-energy transition.

Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect.

The physical origin of the strong emission line at 3.45 eV and broadening yellow luminescence (YL) band centered at 2.2 eV in GaN nanowire (NW) has been debated for many years. Here, we solve these two notable issues by using state-of-the-art first-principles calculations based on many-body perturbation theory combined with polarization-resolved experiments. We demonstrate that the ubiquitous surface "microwires" with amazing characteristics, i.e., the outgrowth nanocrystal along the NW side wall, are vital and offer a new perspective to provide insight into some puzzles in epitaxy materials. Furthermore, inversion of the top valence bands, in the decreasing order of crystal-field split-off hole (CH) and heavy/light hole, results in the optical transition polarized along the NW axis due to quantum confinement. The optical emission from bound excitons localized around the surface microwire to CH band is responsible for the 3.45 eV line with E∥c polarization. Both gallium vacancy and carbon-related defects tend to assemble at the NW surface layer, determining the broadening YL band.

Reducing Mg acceptor activation-energy in Al(0.83)Ga(0.17)N disorder alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice using Mg(Ga) δ-doping: Mg local-structure effect.

Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al(0.83)Ga(0.17)N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al(0.83)Ga(0.17)N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 10(19) cm(-3) can be obtained in (AlN)5/(GaN)1 SL by Mg(Ga) δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN.

[Investigation of dietary fiber intakes and varies in 53 patients with diabetes].

OBJECTIVE: To investigate the intakes of total dietary fiber (TDF), soluble dietary fiber (SDF) and insoluble dietary fiber (IDF) in Subjects With Type 2 Diabetes so as to provide the base for making the adequate intakes of dietary fiber. METHODS: The enzymatic-gravimetric methods for dietary fiber were established on basis of a collaborative study. Dietary intake was measured by means of 3-day food records through weighting and using food pictures. TDF, SDF and IDF were analyzed by enzymatic-gravimetric methods. RESULTS: The reproducibility relative standard deviations for DF ranged from 2.63% to 9.67%. Vegetable foods were the mainly sources of DF. The total dietary intakes, insoluble and soluble fibers were 26.5 +/- 9.8, 14.6 +/- 5.8, 10.4 +/- 4.4 (g/d) respectively. CONCLUSION: The dietary fiber intake of the diabetes remains in the range of intakes recommended by American Diabetes Association.