Improving Carbon Nanotube-Based Radiofrequency Field-Effect Transistors by the Device Architecture and Doping Process.

The semiconducting carbon nanotube (CNT) has been considered a promising candidate for future radiofrequency (RF) electronics due to its excellent electrical properties of high mobility and small capacitance. After decades of development, great progress has been achieved on CNT-based RF field-effect transistors (FETs). However, almost all elevations are owing to advancement of the CNT materials and fabrication process, while the study of device architecture is seldom considered and reported. In this work, we innovatively combined device architecture and related doping processes to further optimize CNT-based RF FETs by guiding process or materials with collaborative optimization for the first time and explore their effect on device performance carefully and statistically. Based on more mature random-oriented CNT materials, we fabricated CNT-based RF FETs having three different gate positions of device architecture variation accompanied by suitable doping schemes. The optimized FETs obtained 2-3 times of current density (transconductance) and 1.3 times the cutoff frequency and maximum oscillation frequency compared with unoptimized devices at the same channel length. After transistor-level verification of effect, we further built a CNT RF amplifier and demonstrated almost 10 dB of transducer gain improvement operating at 8 GHz for X-band application. The achieved results from this work would help further improve CNT RF performance beyond the materials and process point of view.

Selection of regioselective DNA aptamer for detection of homocysteine in nondeproteinized human plasma.

Small molecule-binding aptamers often suffer from high cross reactivity to structure analogues in biological samples, limiting their value for clinical diagnosis. Herein, we present a method to overcome this issue, by performing binding-inhibited organic reaction-based regioselective selection of aptamers against homocysteine (Hcy), which is a marker for diagnosing many disorders including stroke and Alzheimer's. This approach has led to isolation of a DNA aptamer that binds to the alkane thiol chain of Hcy with exceptional specificity against cysteine. It also binds with oxidized Hcy at weaker affinity. Using this new aptamer, we produced a reusable fluorescent optical fiber aptasensor for direct and validated detection of both free and total Hcy in nondeproteinized patient plasma in the diagnostic concentration range. The binding site-specific aptamer selection and optical-fiber-sensing strategy can expand the practical utility of aptamers in clinical diagnosis.

Aligned Carbon Nanotubes-Based Radiofrequency Transistors for Amplitude Amplification and Frequency Conversion at Millimeter Wave Band.

Aligned carbon nanotubes (ACNTs) have been considered as a promising candidate semiconductor with great potential in radiofrequency (RF) electronics due to their high carrier mobility/saturation velocity and small intrinsic capacitance. However, almost all of previously reported works focused on only the cutoff frequency, which is far from enough for practical RF application. In this work, given the speed advantage of ACNTs, we further explore amplitude amplification and frequency conversion capability of ACNTs based RF devices simultaneously, which are two basic functions in RF electronics. Considering there is no de-embedding process for amplification/conversion and reduction power loss, multifinger configuration RF transistors (still having current density around 1 mA/µm) were fabricated with cutoff frequency and maximum oscillation frequency exceeding 150 and 130 GHz, respectively. Based on dedicated ACNTs based RF FETs, we demonstrate almost 7 dB power gain (S21) with over 40 GHz 3-dB bandwidth for amplification and from -12.7 to -17 dB of conversion gain with over 25 dBm IIP3 (input third-order intercept point) of linearity for conversion simultaneously operating at 30 GHz in millimeter wave (mmWave) band both without any tuning instruments and matching technology assistance. The performance achieved here is the best among all the nanomaterials at the mmWave band.

Carbon Nanotube Diodes Operating at Frequencies of Over 50 GHz.

Radiofrequency (RF) diodes used for fifth and sixth-generation (5G and 6G) mobile and wireless communication networks generally require ultrahigh cut-off frequencies and high integration densities of devices with different functions on a single chip and at low cost. Carbon nanotube diodes are promising devices for radiofrequency applications, but the cut-off frequencies are still far below the theoretical estimates. Here, a carbon nanotube diode that operates in the millimeter-wave frequency bands and is based on solution-processed, high-purity carbon nanotube network films is reported. The carbon nanotube diodes exhibit an intrinsic cut-off frequency over 100 GHz and the as-measured bandwidth can exceed 50 GHz at least. Furthermore, The rectification ratio of the carbon nanotube diode by approximately three times by using yttrium oxide for local p-type doping in the diode channel is improved.

Ultra-Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics.

Carbon nanotube (CNT) field-effect transistors (FETs) have been considered ideal building blocks for radiation-hard integrated circuits (ICs), the demand for which is exponentially growing, especially in outer space exploration and the nuclear industry. Many studies on the radiation tolerance of CNT-based electronics have focused on the total ionizing dose (TID) effect, while few works have considered the single event effects (SEEs) and displacement damage (DD) effect, which are more difficult to measure but may be more important in practical applications. Measurements of the SEEs and DD effect of CNT FETs and ICs are first executed and then presented a comprehensive radiation effect analysis of CNT electronics. The CNT ICs without special irradiation reinforcement technology exhibit a comprehensive radiation tolerance, including a 1 × 104 MeVcm2 mg-1 level of the laser-equivalent threshold linear energy transfer (LET) for SEEs, 2.8 × 1013 MeV g-1 for DD and 2 Mrad (Si) for TID, which are at least four times higher than those in conventional radiation-hardened ICs. The ultrahigh intrinsic comprehensive radiation tolerance will promote the applications of CNT ICs in high-energy solar and cosmic radiation environments.

Shortened and multivalent aptamers for ultrasensitive and rapid detection of alternariol in wheat using optical waveguide sensors.

Alternariol (AOH) is one of the common mycotoxins existing in a variety of foods at low level. Aptamers hold great promise for the development of sensitive and rapid aptasensors, but suffer from the excessive length and the difficulty in identification of critical binding domains (CBDs). In this study, the 5 nt CBD of the original 59-nt AOH aptamer (AOH-59, KD = 423 nM) was identified to be a 'C' bulge in between two A-T base pairs. AOH-59 was successfully shortened to a 23 nt aptamer (AOH 6C, KD = 701 nM). A 30 nt bivalent aptamer B-2-3 (KD = 445 nM) and a 39 nt trivalent aptamer T-2-3 (KD = 274 nM) were obtained by simply incorporating one or two CBDs into AOH 6C. The AOH 6C-, B-2-3-, and T-2-3-based optical waveguide aptasensors possessed the unprecedented detection of limits (LODs, S/N = 3) of 42 ± 3, 6 ± 1 and 2 ± 1 fM, respectively. Using the AOH 6C-based sensor as an example, we further demonstrated the detection of AOH spiked in wheat powder with a LOD of 37 pg/g, 20-230-fold lower than those achieved by ELISAs. The sensor was capable for 35 times 2-min regeneration and the assay time including the extraction of AOH from wheat was only about 1 h. We not only devised the first aptasensors for AOH detection, but also provided a simple strategy to design multivalent aptamers for small molecule targets.

Analyzing Gamma-Ray Irradiation Effects on Carbon Nanotube Top-Gated Field-Effect Transistors.

Carbon nanotube (CNT) field-effect transistors (FETs) and integrated circuits (ICs) have been predicted and demonstrated to be some of the most promising candidates for radiation-hardened electronics. The studies mainly focused on the radiation response of the whole transistors, and experiments or analyses to reveal the detailed radiation responses of different components of the FET were absent. Here, we use a controllable experimental method to decouple the total ionizing dose (TID) radiation effects on different individual components of top-gate CNT FETs, including the CNT channel, gate dielectric, and substrate. The substrate is found to be more vulnerable to radiation damage than the gate dielectric and CNT film in FETs. Furthermore, the CNT film not only acts as a radiation-hardened semiconducting channel but also protects the channel/substrate interface by partially shielding the substrate from radiation damage. On the basis of the experimental data, a model is built to predict the irradiation resistance limit of CNT top-gated FETs, which can withstand at least 155 kGy irradiation.

Carbon Nanotube Based Radio Frequency Transistors for K-Band Amplifiers.

Owing to the combination of high carrier mobility and saturation velocity, low intrinsic capacitance, and excellent stability, the carbon nanotube (CNT) has been considered as a perfect semiconductor to construct radio frequency (RF) field-effect transistors (FETs) and circuits with an ultrahigh frequency band. However, the reported CNT RF FETs usually exhibited poor real performance indicated by the as-measured maximum oscillation frequency (fmax), and then the amplifiers, which are the most important and fundamental RF circuits, suffered from a low power gain and a low frequency band. In this work, we build RF transistors on solution-derived randomly orientated CNT films with improved quality and uniformity. The randomly orientated CNT film FETs exhibit the record as-measured maximum fmax of 90 GHz, demonstrating the potential for over 28 GHz (at least one-third of 90 GHz) 5G mmWave (frequency range 2) applications. Benefiting from the large-scale uniformity of CNT films, FETs are designed and fabricated with a large channel width to present low internal resistance for the standard 50 Ω impedance matching guide line, which is critical to construct an RF amplifier. Furthermore, we first demonstrate amplifiers with a maximum power gain up to 11 dB and output third-order intercept point (OIP3) of 15 dBm, both at the K-band, which represents the record of a CNT amplifier and is even comparable with a commercial amplifier based on III-V RF transistors.

Nanoscale Affinity Double Layer Overcomes the Poor Antimatrix Interference Capability of Aptamers.

Poor antimatrix interference capability of aptamers is one of the major obstacles preventing their wide applications for real-sample detections. Here, we devise a multiple-function interface, denoted as a nanoscale affinity double layer (NADL), to overcome this bottleneck via in situ simultaneous target enrichment, purification, and detection. The NADL consists of an upper aptamer layer for target purification and sensing and a lower nanoscale solid-phase microextraction (SPME) layer for sample enrichment. The targets flowing through the NADL-functionalized surface are instantly million-fold enriched and purified by the sequential extraction of aptamer and SPME. The formation of the aptamer-target complex is greatly enhanced, enabling ultrasensitive detection of targets with minimized interference from the matrix. Taking the fiber-optic evanescent wave sensor as an example, we demonstrated the feasibility and generality of the NADL. The unprecedented detection of limits of 800, 4.8, 40, and 0.14 fM were, respectively, achieved for three representative small-molecule targets with distinct hydrophobicity (kanamycin A, sulfadimethoxine, and di-(2-ethylhexyl) phthalate) and protein target (human serum albumin), corresponding to 2500 to 3 × 108-fold improvement compared to the sensors without the NADL. Our sensors also showed exceptionally high target specificity (>1000) and tunable dynamic ranges simply by manipulating the SPME layer. With these features comes the ability to directly detect targets in diluted environmental, food, and biological samples at concentrations all well below the tolerance limits.

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics.

Single-walled carbon nanotubes (CNTs) may enable the fabrication of integrated circuits smaller than 10 nanometers, but this would require scalable production of dense and electronically pure semiconducting nanotube arrays on wafers. We developed a multiple dispersion and sorting process that resulted in extremely high semiconducting purity and a dimension-limited self-alignment (DLSA) procedure for preparing well-aligned CNT arrays (within alignment of 9 degrees) with a tunable density of 100 to 200 CNTs per micrometer on a 10-centimeter silicon wafer. Top-gate field-effect transistors (FETs) fabricated on the CNT array show better performance than that of commercial silicon metal oxide-semiconductor FETs with similar gate length, in particular an on-state current of 1.3 milliamperes per micrometer and a recorded transconductance of 0.9 millisiemens per micrometer for a power supply of 1 volt, while maintaining a low room-temperature subthreshold swing of <90 millivolts per decade using an ionic-liquid gate. Batch-fabricated top-gate five-stage ring oscillators exhibited a highest maximum oscillating frequency of >8 gigahertz.

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz.

Carbon nanotubes (CNTs) have been considered a preferred channel material for constructing high-performance radio frequency (RF) transistors with outstanding current gain cutoff frequency (fT) and power gain cutoff frequency (fmax) but the highest reported fmax is only 70 GHz. Here, we explore how good RF transistors based on solution-derived randomly oriented semiconducting CNT films, which are the most mature CNT materials for scalable fabrication of transistors and integrated circuits, can be achieved. Owing to the significantly reduced number of CNT/CNT junctions obtained by scaling the channel length down to below 100 nm, we realized RF field-effect transistors (FETs) with maximum transconductance Gm up to 0.38 mS/µm, which is the record among CNT-based RF FETs. After de-embedding the pad-induced capacitances and resistances, the CNT FETs with different gate lengths (Lg) exhibit fT as high as 103 GHz (intrinsically 281 GHz) or fmax up to 107 GHz (intrinsically 190 GHz), which are the records among CNT-based RF FETs. In particular, the CNT FETs with an Lg of 50 nm present pad de-embedding fT of 86 GHz and fmax of 85 GHz, and represent the best CNT RF transistor in terms of comprehensive performance to date. To demonstrate the actual high-speed and scalable fabrication of our CNT RF FETs, we fabricated CNT FET-based five-stage ring oscillators with oscillation frequencies above 5 GHz.