Record-High Electron Mobility Exceeding 16 cm2 V- 1 s- 1 in Bisisoindigo-Based Polymer Semiconductor with a Fully Locked Conjugated Backbone.

Polymer semiconductors with mobilities exceeding 10 cm2 V- 1 s- 1 , especially ambipolar and n-type polymer semiconductors, are still rare, although they are of great importance for fabricating polymer field-effect transistors (PFETs) toward commercial high-grade electronics. Herein, two novel donor-acceptor copolymers, PNFFN-DTE and PNFFN-FDTE, are designed and synthesized based on the electron-deficient bisisoindigo (NFFN) and electron-rich dithienylethylenes (DTE or FDTE). The copolymer PNFFN-DTE, containing NFFN and DTE, possesses a partially locked polymeric conjugated backbone, whereas PNFFN-FDTE, containing NFFN and FDTE, has a fully locked one. Fluorine atoms in FDTE not only induce the formation of additional CH∙∙∙F hydrogen bonds, but also lower frontier molecular orbitals for PNFFN-FDTE. Both PNFFN-DTE and PNFFN-FDTE form more ordered molecular packing in thin films prepared from a polymer solution in bicomponent solvent containing 1,2-dichlorobenzene (DCB) and 1-chloronaphthalene (with volume ratio of 99.2/0.8) than pure DCB. The two copolymers-based flexible PFETs exhibit ambipolar charge-transport properties. Notably, the bicomponent solvent-processed PNFFN-FDTE-based PFETs afford a high electron mobility of 16.67 cm2 V-1 s-1 , which is the highest electron-transport mobility for PFETs reported so far. The high electron mobility of PNFFN-FDTE is attributed to its fully locked conjugated backbone, dense molecular packing, and much matched LUMO energy level.

Recent Advances in Inverted Perovskite Solar Cells: Designing and Fabrication.

Inverted perovskite solar cells (PSCs) have been extensively studied by reason of their negligible hysteresis effect, easy fabrication, flexible PSCs and good stability. The certified photoelectric conversion efficiency (PCE) achieved 23.5% owing to the formed lead-sulfur (Pb-S) bonds through the surface sulfidation process of perovskite film, which gradually approaches the performance of traditional upright structure PSCs and indicates their industrial application potential. However, the fabricated devices are severely affected by moisture, high temperature and ultraviolet light due to the application of organic materials. Depending on nitrogen, cost of protection may increase, especially for the industrial production in the future. In addition, the inverted PSCs are found with a series of issues compared with the traditional upright PSCs, such as nonradiative recombination of carriers, inferior stability and costly charge transport materials. Thus, the development of inverted PSCs is systematically reviewed in this paper. The design and fabrication of charge transport materials and perovskite materials, enhancement strategies (e.g., interface modification and doping) and the development of all-inorganic inverted devices are discussed to present the indicator for development of efficient and stable inverted PSCs.

Selection, Preparation and Application of Quantum Dots in Perovskite Solar Cells.

As the third generation of new thin-film solar cells, perovskite solar cells (PSCs) have attracted much attention for their excellent photovoltaic performance. Today, PSCs have reported the highest photovoltaic conversion efficiency (PCE) of 25.5%, which is an encouraging value, very close to the highest PCE of the most widely used silicon-based solar cells. However, scholars have found that PSCs have problems of being easily decomposed under ultraviolet (UV) light, poor stability, energy level mismatch and severe hysteresis, which greatly limit their industrialization. As unique materials, quantum dots (QDs) have many excellent properties and have been widely used in PSCs to address the issues mentioned above. In this article, we describe the application of various QDs as additives in different layers of PSCs, as luminescent down-shifting materials, and directly as electron transport layers (ETL), light-absorbing layers and hole transport layers (HTL). The addition of QDs optimizes the energy level arrangement within the device, expands the range of light utilization, passivates defects on the surface of the perovskite film and promotes electron and hole transport, resulting in significant improvements in both PCE and stability. We summarize in detail the role of QDs in PSCs, analyze the perspective and associated issues of QDs in PSCs, and finally offer our insights into the future direction of development.

Application of Quantum Dot Interface Modification Layer in Perovskite Solar Cells: Progress and Perspectives.

Perovskite solar cells (PSCs) are currently attracting a great deal of attention for their excellent photovoltaic properties, with a maximum photoelectric conversion efficiency (PCE) of 25.5%, comparable to that of silicon-based solar cells. However, PSCs suffer from energy level mismatch, a large number of defects in perovskite films, and easy decomposition under ultraviolet (UV) light, which greatly limit the industrial application of PSCs. Currently, quantum dot (QD) materials are widely used in PSCs due to their properties, such as quantum size effect and multi-exciton effect. In this review, we detail the application of QDs as an interfacial layer to PSCs to optimize the energy level alignment between two adjacent layers, facilitate charge and hole transport, and also effectively assist in the crystallization of perovskite films and passivate defects on the film surface.

Recent structural evolution of lactam- and imide-functionalized polymers applied in organic field-effect transistors and organic solar cells.

Organic semiconductor materials, especially donor-acceptor (D-A) polymers, have been increasingly applied in organic optoelectronic devices, such as organic field-effect transistors (OFETs) and organic solar cells (OSCs). Plenty of high-performance OFETs and OSCs have been achieved based on varieties of structurally modified D-A polymers. As the basic building block of D-A polymers, acceptor moieties have drawn much attention. Among the numerous types, lactam- and imide-functionalized electron-deficient building blocks have been widely investigated. In this review, the structural evolution of lactam- or imide-containing acceptors (for instance, diketopyrrolopyrrole, isoindigo, naphthalene diimide, and perylene diimide) is covered and their representative polymers applied in OFETs and OSCs are also discussed, with a focus on the effect of varied structurally modified acceptor moieties on the physicochemical and photoelectrical properties of polymers. Additionally, this review discusses the current issues that need to be settled down and the further development of new types of acceptors. It is hoped that this review could help design new electron-deficient building blocks, find a more valid method to modify already reported acceptor units, and achieve high-performance semiconductor materials eventually.

Multisubstituted Azaisoindigo-Based Polymers for High-Mobility Ambipolar Thin-Film Transistors and Inverters.

Ambipolar semiconducting materials have great potential in complementary-like organic logic circuits. Accessing such logic circuits demands balanced hole and electron mobilities. However, the lack of ambipolar high-mobility polymer semiconductors with balanced charge carrier-transporting properties precludes the rapid development of organic logic circuits. In this context, structural modification of semiconductor materials to enhance the electron/hole transport is of great urgency. Herein, a multifunctionalization strategy is used to achieve this goal. Combined electron-withdrawing moieties involving fluorine and pyridinic nitrogen atoms can not only reduce the frontier molecular orbital energies but also planarize the polymer backbone, demonstrating synergetic effects on the control over the carrier injection process at the metal-semiconductor interface and microstructure-sensitive charge transport in the channel. A balanced ambipolar behavior with electron/hole mobilities of 3.88/3.44 cm2 V-1 s-1 was observed, and complementary-like inverters with high gains of greater than 200 were achieved. Microstructure and thin-film morphology were characterized to further reveal the relationship between device performances and macroscopic observables. This multifunctionalization strategy bodes well for developing new ambipolar semiconducting materials.

Identification of a novel human cancer/testis gene MAEL that is regulated by DNA methylation.

The mouse maelstrom (MAEL) gene has been found to be expressed in male germ cells and to play a role in spermatogenesis. Here, we cloned the human MAEL gene by digital differential display and found that, among human tissues, MAEL is only expressed in the testis, but it is also expressed in various cancer cell lines. The transcription start site of the MAEL gene is 74-bp upstream of the start codon. The region from -216 to +150 is the basal promoter of the MAEL gene, and a CpG island (-295 to +148) is located in this region. Treatment with the demethylating agent 5'-Aza-2-Deoxycytidine significantly upregulated MAEL expression. These results suggest that MAEL is a novel cancer/testis-associated gene and is regulated by DNA methylation.

[The analysis of heterogeneity of HWTX-I expressed in Pichia pastoris].

To seek the reason of heterogeneity of recombinant HWTX-I (rHWTX-I) expressed in Pichia pastoris. We expressed HWTX-I gene of interest in Pichia pastoris GS115/HWTX-I. The heterogenous product expressed was separated, purified and identified by using Ion exchange HPLC, reverse HPLC, Tricine SDS-PAGE and MALDI-TOF Mass Spectrometry and then sequenced in both N-terminus and C-terminus. These results show that the heterogeneity of rHWTX-I results from the incomplete processing of signal peptide of N-terminus and the internal degradation of C-terminus. Biological activity assay shows that the activity of the heterogenous rHWTX-I only showed 30% activity compared with the native HWTX-I. The Solutions to how to avoid the heterogeneity are also discussed.