ABSTRACT
Due to the perfection of the nanofabrication in nanotechnology and nanoscience, ice lithography (IL) by patterning ice thin-films with a focused electron beam, as a significant derivative technology of electron beam lithography (EBL), is attracting growing attention, evoked by its advantages over traditional EBL with respects of in situ-fabrication, high efficiency, high accuracy, limited proximity effect, three-dimensional (3D) profiling capability, etc. However, theoretical modeling of ice lithography for replicated profiles on the ice resist (amorphous solid water, ASW) has rarely been reported so far. As the result, the development of ice lithography still stays at the experimental stage. The shortage of modeling methods limits our insight into the ice lithography capability, as well as theoretical anticipations for future developments of this emerging technique. In this work, an e-beam induced etching ice model based on the Monte Carlo algorithm for point/line spread functions is established to calculate the replicated profiles of the resist by ice lithography. To testify the fidelity of the modeling method, systematic simulations of the ice lithography property under the processing parameters of the resist thickness, electron accelerating voltage and actual patterns are performed. Theoretical comparisons between the IL on ASW and the conventional EBL on polymethyl methacrylate (PMMA) show superior properties of IL over EBL in terms of the minimum feature size, the highest aspect ratio, 3D nanostructure/devices, etc. The success in developing a modeling method for ice lithography, as reported in this paper, offers a powerful tool in characterizing ice lithography up to the theoretical level and down to molecular scales.
