Enhanced performance of organic light-emitting diodes by integrating quasi-periodic micro-nano structures.

To integrate a quasi-periodic micro-nano structure (PMS) to the organic light-emitting devices (OLEDs) is an efficient way to enhance the performance of OLEDs. In this paper, the PMS prepared by the phase separation of Polystyrene and Poly (methyl methacrylate) was integrated to the OLEDs with the structures of Glass/PMS/Ag (30 nm)/MoO3 (5 nm)/(NPB) (40 nm)/(Alq3) (60 nm)/LiF (0.5 nm)/Al (150 nm). The maximum luminance intensity and external quantum efficiency increased to 10700 cd/m2 and 1.11 %, which is 48 % and 44 % higher than that of 7209 cd/m2 and 0.77 % of the planar reference device. The enhanced performance of OLEDs was ascribed to the attenuation of surface plasmon polariton loss caused by the PMS, which was testified by the Finite-Difference Time-Domain (FDTD) simulation. The PMS was also transferred to the hole transfer layer (PEDOT: PSS) of OLEDs by nano-imprinting lithography with the structure of Glass/(ITO) (100 nm)/PEDOT: PSS (100 nm) (with PMS)/NPB (10 nm)/Alq3 (50 nm)/LiF (0.5 nm)/Al (100 nm). The performance was also improved by the optimized PMS and the light out-coupling efficiency increased to about 49.5 %, which is much higher than that of 28.8 % in the OLEDs with PMS Ag anode and 20 % in the planar reference devices. This suggests that the PMS can improve the OLED device performance regardless of the functional layer in which the PMS is integrated.

Enhanced lasing properties of BUBD-1 film with multifunctional buffer layers doped with silver nanoparticles.

The organic semiconductor lasers (OSLs) have been seen as a promising light source for future applications. Achieving organic semiconductors with low amplified spontaneous emission (ASE) threshold is a key progress toward the electrically pumped OSLs. In this paper, the ASE properties of CBP: 2wt% BUBD-1 blend films were optimized using buffer layers containing silver nanoparticles (Ag NPs) with different ratios. Both photoluminescence intensity and ASE properties of blend films were optimized when the buffer layer with 25 vol% Ag NPs was introduced. The lowest ASE threshold is 0.47 µJ/Pulse (6.71 µJ/cm2), which reduces 67.6%, and the highest gain factor is 20.14 cm-1, which enhances 47.8% compared with that without buffer layers. The enhancement of ASE properties of blend films was ascribed to the four functions of the Ag NPs doped buffer layers, including the low refractive index of PMMA and the triple localized surface plasmon resonance (LSPR) effects of Ag NPs in buffer layers. The results show that the buffer layer modified by metal nanoparticles has great application potential in improving the lasing performance of organic small molecules.

Enhanced performance of solution-processed OLEDs by altering the molecular transition dipole moment orientation of emission layers.

Transition dipole moment orientation is one of the crucial factors, which can enhance the performance of organic light-emitting diodes (OLEDs). In this work, the transition dipole moment orientation of the host-guest emission layers (EMLs) prepared by solution method annealed at different temperatures were systematically studied by analyzing the angle-dependent PL spectrum. When the EMLs of 2DPAc-MPM (20 wt%): DPEPO was annealed at the temperature of 115 °C, the photoluminescence quantum yield (PLQY) was enhanced to 78%±3.5%, and the vertical dipole ratio was reduced to 0.34. The lower vertical orientation of transition dipoles is conducted to improve the electron and hole mobility, which was testified by the hole and electron only devices. The lower vertical dipole ratio, higher PLQY and carrier mobility together enhanced the performance of solution processed OLEDs.