Diameter dependence of the transport properties of antimony telluride nanowires.

We report measurements of electronic, thermoelectric, and galvanomagnetic properties of individual single crystal antimony telluride (Sb(2)Te(3)) nanowires with diameters in the range of 20-100 nm. Temperature-dependent resistivity and thermoelectric power (TEP) measurements indicate hole dominant diffusive thermoelectric generation with an enhancement of the TEP for smaller diameter wires up to 110 microV/K at T = 300 K. We measure the magnetoresistance in magnetic fields both parallel and perpendicular to the nanowire [110] axis, where strong anisotropic positive magnetoresistance behavior was observed.

Thermoelectric and magnetothermoelectric transport measurements of graphene.

The conductance and thermoelectric power (TEP) of graphene is simultaneously measured using a microfabricated heater and thermometer electrodes. The sign of the TEP changes across the charge neutrality point as the majority carrier density switches from electron to hole. The gate dependent conductance and TEP exhibit a quantitative agreement with the semiclassical Mott relation. In the quantum Hall regime at a high magnetic field, quantized thermopower and Nernst signals are observed and are also in agreement with the generalized Mott relation, except for strong deviations near the charge neutrality point.