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1.
Trap-limited hydrogen diffusion in boron-doped silicon.
Zundel T; Weber J.
Phys Rev B Condens Matter ; 46(4): 2071-2077, 1992 Jul 15.
Article in English | MEDLINE | ID: mdl-10003882
2.
Boron reactivation kinetics in hydrogenated silicon after annealing in the dark or under illumination.
Zundel T; Weber J.
Phys Rev B Condens Matter ; 43(5): 4361-4372, 1991 Feb 15.
Article in English | MEDLINE | ID: mdl-9997790
3.
Dissociation energies of shallow-acceptor-hydrogen pairs in silicon.
Zundel T; Weber J.
Phys Rev B Condens Matter ; 39(18): 13549-13552, 1989 Jun 15.
Article in English | MEDLINE | ID: mdl-9948267
4.
Process-induced and gold acceptor defects in silicon.
Mesli A; Courcelle E; Zundel T; Siffert P.
Phys Rev B Condens Matter ; 36(15): 8049-8062, 1987 Nov 15.
Article in English | MEDLINE | ID: mdl-9942604
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