ABSTRACT
A strain-relief structure by combining the strain-engineered periodic wrinkles and the parallel ribbons was employed to fabricate flexible dual spin valves onto PDMS substrates in a direct sputtering method. The strain-relief structure can accommodate the biaxial strain accompanying with stretching operation (the uniaxial applied tensile strain and the induced transverse compressive strain due to the Poisson effect), thus significantly reducing the influence of the residual strain on the giant magnetoresistance (GMR) performance. The fabricated GMR dual spin-valve sensor exhibits the nearly unchanged MR ratio of 9.9%, magnetic field sensitivity up to 0.69%/Oe, and zero-field resistance in a wide range of stretching strain, making it promising for applications on a conformal shape or a movement part.
ABSTRACT
Solid state cooling technologies based on electrocaloric, magnetocaloric and mechanocaloric effects have received much attention during the past decade. To further improve the cooling efficiency and reduce the driving field, it is desirable to combine multiple effects in a single system. Here, we report on the caloric effects induced by both electric field and strain in PbZr0.95Ti0.05O3 films deposited on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate. The isothermal entropy change (ΔS) induced by the antiferroelectric-ferroelectric phase transition of PbZr0.95Ti0.05O3 films is calculated to be 6.78 J K(-1) kg(-1). Furthermore, the strain from 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate can reduce the electric field where ΔS reaches the maximum by as much as 50 kV/cm. The electrocaloric efficiency is also increased from 0.366 to 0.378 by the strain effect. The electrocaloric effect in an antiferroelectric material assisted by strain may lead to more efficient solid state cooling technology.
ABSTRACT
Thermal and electrical control of magnetic anisotropy were investigated in flexible Fe81Ga19 (FeGa)/Polyvinylidene fluoride (PVDF) multiferroic heterostructures. Due to the large anisotropic thermal deformation of PVDF (α1 = -13 × 10(-6) K(-1) and α2 = -145 × 10(-6) K(-1)), the in-plane uniaxial magnetic anisotropy (UMA) of FeGa can be reoriented 90° by changing the temperature across 295 K where the films are magnetically isotropic. Thus, the magnetization of FeGa can be reversed by the thermal cycling between 280 and 320â K under a constant magnetic field lower than coercivity. Moreover, under the assistance of thermal deformation with slightly heating the samples to the critical temperature, the electric field of ± 267 kV cm(-1) can well align the UMA along the two orthogonal directions. The new route of combining thermal and electrical control of magnetic properties realized in PVDF-based flexible multiferroic materials shows good prospects in application of flexible thermal spintronic devices and flexible microwave magnetic materials.
ABSTRACT
The magnetic anisotropy is decreased with increasing temperature in normal magnetic materials, which is harmful to the thermal stability of magnetic devices. Here, we report the realization of positive temperature coefficient of magnetic anisotropy in a novel composite combining ß-phase polyvinylidene fluoride (PVDF) with magnetostrictive materials (magnetostrictive film/PVDF bilayer structure). We ascribe the enhanced magnetic anisotropy of the magnetic film at elevated temperature to the strain-induced anisotropy resulting from the anisotropic thermal expansion of the ß-phase PVDF. The simulation based on modified Stoner-Wohlfarth model and the ferromagnetic resonance measurements confirms our results. The positive temperature coefficient of magnetic anisotropy is estimated to be 1.1 × 10(2)â J m(-3) K(-1). Preparing the composite at low temperature can enlarge the temperature range where it shows the positive temperature coefficient of magnetic anisotropy. The present results may help to design magnetic devices with improved thermal stability and enhanced performance.
ABSTRACT
We investigated capacitors based on polycrystalline narrow-band-gap BiFeO(3) (BFO) thin films with different top electrodes. The photovoltaic response for the capacitor with a Sn-doped In(2)O(3) (ITO) top electrode is about 25 times higher than that with a Au top electrode, which indicates that the electrode plays a key role in determining the photovoltaic response of ferroelectric thin film capacitors, as simulated by Qin et al (2009 Appl. Phys. Lett. 95 22912). The light-to-electricity photovoltaic efficiency for the ITO/polycrystalline BFO/Pt capacitor can reach 0.125%. Furthermore, under incident light of 450 µW cm(-2) and zero bias, the corresponding photocurrent varies from 0.2 to 200 pA, that is, almost a 1000-fold photoconductivity enhancement. Our experiments suggest that polycrystalline BFO films are promising materials for application in photo-sensitive and energy-related devices.
