Strong infrared photoluminescence in highly porous layers of large faceted Si crystalline nanoparticles.

Almost all physical processes in solids are influenced by phonons, but their effect is frequently overlooked. In this paper, we investigate the photoluminescence of large silicon nanoparticles (approximately 100 nm size, synthesized by chemical vapor deposition) in the visible to the infrared detection range. We find that upon increasing laser irradiance, an enormous photoluminescence emission band appears in the infrared. Its intensity exhibits a superlinear power dependence, increasing over four orders of magnitude in the investigated pump power range. Particles of different sizes as well as different shapes in porous layers are investigated. The results are discussed taking into account the efficient generation of phonons under high-power pumping, and the reduced capability, porosity dependent, of the silicon nanoparticles to exchange energy with each other and with the substrate. Our findings are relevant for heat management strategies in silicon.

Efficient optical extraction of hot-carrier energy.

Light-induced generation of free charge carriers in semiconductors constitutes the physical basis of photodetection and photovoltaics. To maximize its efficiency, the energy of the photons must be entirely used for this purpose. This is highly challenging owing to the ultrafast thermalization of 'hot' carriers, which are created by absorption of high-energy photons. Thermalization leads to heat generation, and hence efficiency loss. To circumvent this, dedicated schemes such as photovoltaic hot-carrier cells are being explored. Here we consider optical extraction of the excess energy of hot carriers by emission of infrared photons, using erbium ions in combination with silicon nanocrystals. We determine the external quantum yield of the infrared photon generation by the erbium ions, and demonstrate that cooling of the hot carriers induces a steep, step-like, increase in erbium-related external quantum yield by up to a factor of 15 towards higher excitation energies. Finally, we comment on the potential of our findings for future photovoltaics in the form of an optical ultraviolet-to-infrared spectral converter.