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1.
Electron-impact core excitation of SF6. I. S 2p, S 2s, and F 1s spectroscopy.
Francis JT; Turci CC; Tyliszczak T; de Souza GG; Kosugi N; Hitchcock AP.
Phys Rev A ; 52(6): 4665-4677, 1995 Dec.
Article in English | MEDLINE | ID: mdl-9912806
2.
Electron-impact core excitation of SF6. II. Generalized oscillator strengths in the S 2p region.
Turci CC; Francis JT; Tyliszczak T; de Souza GG; Hitchcock AP.
Phys Rev A ; 52(6): 4678-4688, 1995 Dec.
Article in English | MEDLINE | ID: mdl-9912807
3.
Experimental and theoretical determination of the optical and generalized oscillator strengths for the inner-shell excitation of C2H2.
de Miranda MP; Bielschowsky CE; Boechat Roberty HM; de Souza GG.
Phys Rev A ; 49(4): 2399-2404, 1994 Apr.
Article in English | MEDLINE | ID: mdl-9910510
4.
Angle-resolved electron-energy-loss study of core-level electron excitation in molecules: Determination of the generalized oscillator strength for the carbon 1s(2 sigma g-->2 pi u) excitation in CO2.
Boechat Roberty HM; Bielschowsky CE; de Souza GG.
Phys Rev A ; 44(3): 1694-1698, 1991 Aug 01.
Article in English | MEDLINE | ID: mdl-9906136
5.
Generalized oscillator strength for the 3s-3p and 2p-3s transitions in the sodium atom.
Bielschowsky CE; Lucas CA; de Souza GG; Nogueira JC.
Phys Rev A ; 43(11): 5975-5979, 1991 Jun 01.
Article in English | MEDLINE | ID: mdl-9904927
6.
Electron-impact excitation of the 31.4-eV band in N2.
de Souza GG; Bielschowsky CE; Lucas CA; Souza AC.
Phys Rev A ; 42(3): 1363-1366, 1990 Aug 01.
Article in English | MEDLINE | ID: mdl-9904165
7.
Electron-impact excitation of acetylene above 12 eV.
de A e Souza AC; de Souza GG.
Phys Rev A Gen Phys ; 38(9): 4488-4493, 1988 Nov 01.
Article in English | MEDLINE | ID: mdl-9900913
8.
Generalized oscillator strength for the 3p6-->3p5(4s,4s') transitions in argon.
Bielschowsky CE; de Souza GG; Lucas CA; Boechat Roberty HM.
Phys Rev A Gen Phys ; 38(7): 3405-3409, 1988 Oct 01.
Article in English | MEDLINE | ID: mdl-9900774
9.
Relaxation processes of resonances in SiH4 in the vicinity of the silicon 2p threshold.
de Souza GG; Morin P; Nenner I.
Phys Rev A Gen Phys ; 34(6): 4770-4776, 1986 Dec.
Article in English | MEDLINE | ID: mdl-9897862
10.
Selective resonant photoionization processes near the Si 2p edge of tetramethylsilane.
Morin P; de Souza GG; Nenner aI; Lablanquie P.
Phys Rev Lett ; 56(2): 131-134, 1986 Jan 13.
Article in English | MEDLINE | ID: mdl-10032873
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