Unconventional Charge-Density-Wave Gap in Monolayer NbS2.

Using scanning tunneling microscopy and spectroscopy, for a monolayer of transition metal dichalcogenide H-NbS2 grown by molecular beam epitaxy on graphene, we provide unambiguous evidence for a charge density wave (CDW) with a 3 × 3 superstructure, which is not present in bulk NbS2. Local spectroscopy displays a pronounced gap on the order of 20 meV at the Fermi level. Within the gap, low-energy features are present. The gap structure with its low-energy features is at variance with the expectation for a gap opening in the electronic band structure due to a CDW. Instead, comparison with ab initio calculations indicates that the observed gap structure must be attributed to combined electron-phonon quasiparticles. The phonons in question are the elusive amplitude and phase collective modes of the CDW transition. Our findings advance the understanding of CDW mechanisms in 2D materials and their spectroscopic signatures.

Coulomb engineering of two-dimensional Mott materials.

Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.

Second-order dual fermion for multi-orbital systems.

In dynamical mean-field theory, the correlations between electrons are assumed to be purely local. The dual fermion approach provides a systematic way of adding non-local corrections to the dynamical mean-field theory starting point. Initial applications of this method were largely restricted to the single-orbital Hubbard model. Here, we present an implementation of second-order dual fermion for general multi-orbital systems and use this approach to investigate spatial correlations in SrVO3. In addition, the approach is benchmarked in several exactly solvable small systems.

Bethe-Salpeter Equation at the Critical End Point of the Mott Transition.

Strong repulsive interactions between electrons can lead to a Mott metal-insulator transition. The dynamical mean-field theory (DMFT) explains the critical end point and the hysteresis region usually in terms of single-particle concepts, such as the spectral function and the quasiparticle weight. In this Letter, we reconsider the critical end point of the metal-insulator transition on the DMFT's two-particle level. We show that the relevant eigenvalue and eigenvector of the nonlocal Bethe-Salpeter kernel in the charge channel provide a unified picture of the hysteresis region and of the critical end point of the Mott transition. In particular, they simultaneously explain the thermodynamics of the hysteresis region and the iterative stability of the DMFT equations. This analysis paves the way for a deeper understanding of phase transitions in correlated materials.

Bandwidth renormalization due to the intersite Coulomb interaction.

The theory of correlated electrons is currently moving beyond the paradigmatic Hubbard U, towards the investigation of intersite Coulomb interactions. Recent investigations have revealed that these interactions are relevant for the quantitative description of realistic materials. Physically, intersite interactions are responsible for two rather different effects: screening and bandwidth renormalization. We use a variational principle to disentangle the roles of these two processes and study how appropriate the recently proposed Fock treatment of intersite interactions is in correlated systems. The magnitude of this effect in graphene is calculated based on cRPA values of the intersite interaction. We also apply the variational principle to benzene and find effective parameters comparable to those obtained by ab initio density matrix downfolding.