Advances in Semiconductor Lasers Based on Parity-Time Symmetry.

Semiconductor lasers, characterized by their high efficiency, small size, low weight, rich wavelength options, and direct electrical drive, have found widespread application in many fields, including military defense, medical aesthetics, industrial processing, and aerospace. The mode characteristics of lasers directly affect their output performance, including output power, beam quality, and spectral linewidth. Therefore, semiconductor lasers with high output power and beam quality are at the forefront of international research in semiconductor laser science. The novel parity-time (PT) symmetry mode-control method provides the ability to selectively modulate longitudinal modes to improve the spectral characteristics of lasers. Recently, it has gathered much attention for transverse modulation, enabling the output of fundamental transverse modes and improving the beam quality of lasers. This study begins with the basic principles of PT symmetry and provides a detailed introduction to the technical solutions and recent developments in single-mode semiconductor lasers based on PT symmetry. We categorize the different modulation methods, analyze their structures, and highlight their performance characteristics. Finally, this paper summarizes the research progress in PT-symmetric lasers and provides prospects for future development.

Lasing Emission from Soft Photonic Crystals for Pressure and Position Sensing.

In this report, we introduce a 1D photonic crystal (PhC) nanocavity with waveguide-like strain amplifiers within a soft polydimethylsiloxane substrate, presenting it as a potential candidate for highly sensitive pressure and position optical sensors. Due to its substantial optical wavelength response to uniform pressure, laser emission from this nanocavity enables the detection of a minimum applied uniform pressure of 1.6‱ in experiments. Based on this feature, we further studied and elucidated the distinct behaviors in wavelength shifts when applying localized pressure at various positions relative to the PhC nanocavity. In experiments, by mapping wavelength shifts of the PhC nanolaser under localized pressure applied using a micro-tip at different positions, we demonstrate the nanocavity's capability to detect minute position differences, with position-dependent minimum resolutions ranging from tens to hundreds of micrometers. Furthermore, we also propose and validate the feasibility of employing the strain amplifier as an effective waveguide for extracting the sensing signal from the nanocavity. This approach achieves a 64% unidirectional coupling efficiency for leading out the sensing signal to a specific strain amplifier. We believe these findings pave the way for creating a highly sensitive position-sensing module that can accurately identify localized pressure in a planar space.

Research on an Enhanced Detuned-Loading Effect in Integrated Two-Section DFB Lasers with High Modulation Bandwidths.

A novel high-speed directly modulated two-section distributed-feedback (TS-DFB) semiconductor laser based on the detuned-loading effect is proposed and simulated. A grating structure is designed by the reconstruction-equivalent-chirp (REC) technique. A π phase shift is introduced into the reflection grating, which can provide a narrow-band reflection region with a sharp falling slope on both sides of the reflection spectrum, thus enhancing the detuned-loading effect. Owing to its unique dual-falling-edges structure, the bandwidth can be improved even when the lasing wavelength shifts beyond the left falling edge due to a thermal effect in the actual test, in which condition the detuned-loading effect can be used twice, which greatly improves the yield. The modulation bandwidth is increased from 17.5 GHz for a single DFB laser to around 24 GHz when the lasing wavelength is located on the left falling edge of the TS-DFB laser based on the detuned-loading effect, and it can be increased to 22 GHz for the right side. An eight-channel laser array with precise wavelength spacing is investigated, with a side-mode suppression ratio (SMSR) >36 dB. In addition, TS-DFB lasers with uniform reflection gratings are studied, and simulated results show that the modulation characteristic is far inferior to the laser with a phase-shifted grating reflector.

Effects of 970 nm diode laser irradiation on morphology, proliferation, and differentiation of gingival mesenchymal stem cells / Efectos de la irradiación con láser de diodo de 970 m sobre la morfología, la proliferación y la diferenciación de las células madre mesenquimales gingivales

Objective: The objective of this study was to investigate the morphology, proliferation, and differentiation of gingival mesenchymal stem cells (GMSCs) irradiated with a 970 nm Diode Laser (LLLT). It is essential to validate the efficacy of treatment, optimize irradiation conditions and guarantee the safety and quality of stem cells for future use in dental applications. Materials and Methods: GMSCs were cultured in standard conditions and irradiated with a Diode laser (970 nm, 0.5W) with an energy density of 9J/cm2. Cell proliferation was assessed with the WST-1 proliferation kit. GMSCs were differentiated into chondrogenic and osteogenic lineages. Cell morphology was performed with Hematoxylin/eosin staining, and quantitative nuclear analysis was done. Cell viability was monitored with trypan blue testing. Results: GMSCs subjected to irradiation demonstrated a significant increase in proliferation at 72 hours compared to the non-irradiated controls (p=0.027). This indicates that the 970 nm diode laser has a stimulatory effect on the proliferation of GMSCs. LLLT-stimulated GMSCs exhibited the ability to differentiate into chondrogenic and osteogenic lineages. A substantial decrease in cell viability was observed 24 hours after irradiation (p=0.024). However, after 48 hours, the cell viability recovered without any significant differences. This indicates that there might be a temporary negative impact on cell viability immediately following irradiation, but the cells were able to recover and regain their viability over time. Conclusions: This study support that irradiation with a 970 nm diode laser could stimulate the proliferation of GMSCs, maintain their ability to differentiate into chondrogenic and osteogenic lineages, and has minimal impact on the mor- phological characteristics of the cells. These results support the potential use of NIR Lasers in combination with GMSCs as a promising strategy for dental treatments.

Objetivo: El objetivo de este estudio fue investigar la morfología, proliferación y diferenciación de las células madre mesenquimatosas (GMSC) irradiadas con un láser de diodo de 970 nm (LLLT). Es fundamental validar la eficacia del tratamiento, optimizar las condiciones de irradiación y garantizar la seguridad y calidad de las células madre para su uso futuro en aplicaciones dentales.Materiales y Métodos: Las GMSC se cultivaron en condiciones estándar y se irradiaron con un láser de diodo (970 nm, 0,5 W) con una densidad de energía de 9 J/cm2. La proliferación celular se evaluó con el kit de proliferación WST-1. Las GMSC se diferenciaron en linajes condrogénicos y osteogénicos. La morfología celular se realizó con tinción de hematoxilina/eosina y se realizó un análisis nuclear cuantitativo. La viabilidad celular se controló con prueba de azul de tripano. Resultados: Las GMSC sometidas a irradiación demostraron un aumento significativo en la proliferación a las 72 horas en comparación con los controles no irradiados (p=0,027). Esto indica que el láser de diodo de 970 nm tiene un efecto estimulante sobre la proliferación de GMSC. Las GMSC estimuladas con LLLT exhibieron la capacidad de diferenciarse en linajes condrogénicos y osteogénicos. Se observó una disminución sustancial de la viabilidad celular 24 horas después de la irradiación (p=0,024). Sin embargo, después de 48 horas, la viabilidad celular se recuperó sin diferencias significativas. Esto indica que podría haber un impacto negativo temporal en la viabilidad de las células inmediatamente después de la irradiación, pero las células pudieron recuperarse y recuperar su viabilidad con el tiempo. Conclusión: En conclusión, este estudio respalda que la irradiación con un láser de diodo de 970 nm podría estimular la proliferación de GMSC, mantener su capacidad para diferenciarse en linajes condrogénicos y osteogénicos y tiene un impacto mínimo en las características morfológicas de las células. Estos resultados respaldan el uso potencial de láseres NIR en combinación con GMSC como una estrategia prometedora para tratamientos dentales.

Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors.

In this study, we propose a solution for realization of surface emitting, 2D array of visible light laser diodes based on AlInGaN semiconductors. The presented system consists of a horizontal cavity lasing section adjoined with beam deflecting section in the form of 45° inclined planes. They are placed in the close vicinity of etched vertical cavity mirrors that are fabricated by Reactive Ion Beam Etching. The principle of operation of this device is confirmed experimentally; however, we observed an unexpected angular distribution of reflected rays for the angles lower than 45°, which we associate with the light diffraction and interference between the vertical and deflecting mirrors. The presented solution offers the maturity of edge-emitting laser technology combined with versatility of surface-emitting lasers, including on-wafer testing of emitters and addressability of single light sources.

Time-delay signature suppression in delayed-feedback semiconductor lasers as a paradigm for feedback control in complex physiological networks.

Physiological networks, as observed in the human organism, involve multi-component systems with feedback loops that contribute to self-regulation. Physiological phenomena accompanied by time-delay effects may lead to oscillatory and even chaotic dynamics in their behaviors. Analogous dynamics are found in semiconductor lasers subjected to delayed optical feedback, where the dynamics typically include a time-delay signature. In many applications of semiconductor lasers, the suppression of the time-delay signature is essential, and hence several approaches have been adopted for that purpose. In this paper, experimental results are presented wherein photonic filters utilized in order to suppress time-delay signatures in semiconductor lasers subjected to delayed optical feedback effects. Two types of semiconductor lasers are used: discrete-mode semiconductor lasers and vertical-cavity surface-emitting lasers (VCSELs). It is shown that with the use of photonic filters, a complete suppression of the time-delay signature may be affected in discrete-mode semiconductor lasers, but a remnant of the signature persists in VCSELs. These results contribute to the broader understanding of time-delay effects in complex systems. The exploration of photonic filters as a means to suppress time-delay signatures opens avenues for potential applications in diverse fields, extending the interdisciplinary nature of this study.

Ultrafast Pulse Generation from Quantum Cascade Lasers.

Quantum cascade lasers (QCLs) have broken the spectral barriers of semiconductor lasers and enabled a range of applications in the mid-infrared (MIR) and terahertz (THz) regimes. However, until recently, generating ultrashort and intense pulses from QCLs has been difficult. This would be useful to study ultrafast processes in MIR and THz using the targeted wavelength-by-design properties of QCLs. Since the first demonstration in 2009, mode-locking of QCLs has undergone considerable development in the past decade, which includes revealing the underlying mechanism of pulse formation, the development of an ultrafast THz detection technique, and the invention of novel pulse compression technology, etc. Here, we review the history and recent progress of ultrafast pulse generation from QCLs in both the THz and MIR regimes.

A Study on the Photoelectric Properties of Dual Ridge Terahertz Quantum Cascade Lasers at 3.1 THz.

High-power, incoherent THz array sources are widely desired in some applications due to their low energy, unique terahertz fingerprint, and image. In this work, a dual ridge terahertz quantum cascade laser lasing at 3.1 THz is presented, and the device's performance is analyzed in detail. The maximum output power can reach 512 mW when the two ridges work simultaneously in continuous-wave mode, with a threshold current density of 281 A/cm2 at 15 K. While the peak power is approximately 704 mW in pulse-wave mode at 15 K, the lasing still could be observed approximately 7 mW at 125 K. The far-field pattern of the dual ridge THz QCL is detected by a THz camera; two light spots typically show a single-lobe Gaussian distribution. The experimental results provide a reference for realizing high-power THz quantum cascade lasers, and they will provide some guidance for the structural design of multiple ridges or laser arrays.

Effect of Laser Parameters on Optical Stealth Transmission System Performance.

The performance of an optical stealth transmission system based on gain-switched laser depends largely on the laser parameters. Modulation frequency, bias current, and modulation current are considered to study the covertness and bit error rate performance of the optical stealth transmission system. According to optical stealth carrier generation with time spreading and all-optical encoding, the stealth signals are derived. A complementary encoding scheme is adopted in the system simulation. The simulation results show that the temporal and spectral characteristics of the generated stealth signal can be changed by adjusting the bias current, modulation current, and modulation frequency. However, there is a trade-off between bit error rate performance and covertness of the stealth channel. Under the premise of error-free transmission, the bias current and modulation frequency should be reduced and the modulation current should be improved to optimize the covertness of the stealth channel.

Epitaxially Grown InP Micro-Ring Lasers.

In the near future, technological advances driven by the Fourth Industrial Revolution will boost the demand for integrated, power-efficient miniature lasers, which are important for optical data communications and advanced sensing applications. Although top-down fabricated III-V semiconductor micro-disk and micro-ring lasers have been shown to be efficient light sources, challenges such as etching-induced sidewall roughness and poor fabrication scalability have been limiting the potential for high-density on-chip integration. Here, we demonstrate InP micro-ring lasers fabricated with a highly scalable epitaxial growth technique. With an optimized cavity design, the optically pumped micro-ring lasers show efficient room-temperature lasing with a lasing threshold of around 50 µJ cm-2 per pulse. Remarkably, through comprehensive modeling of the micro-ring laser, we demonstrate lasing mode engineering experimentally by tuning the vertical ring height. Our work is a major step toward realizing the high-density monolithic integration of III-V miniature lasers on submicrometer-scale optoelectronic devices.

Chaotic Time-Delay Signature Suppression and Entropy Growth Enhancement Using Frequency-Band Extractor.

By frequency-band extracting, we experimentally and theoretically investigate time-delay signature (TDS) suppression and entropy growth enhancement of a chaotic optical-feedback semiconductor laser under different injection currents and feedback strengths. The TDS and entropy growth are quantified by the peak value of autocorrelation function and the difference of permutation entropy at the feedback delay time. At the optimal extracting bandwidth, the measured TDS is suppressed up to 96% compared to the original chaos, and the entropy growth is higher than the noise-dominated threshold, indicating that the dynamical process is noisy. The effects of extracting bandwidth and radio frequencies on the TDS and entropy growth are also clarified experimentally and theoretically. The experimental results are in good agreements with the theoretical results. The skewness of the laser intensity distribution is effectively improved to 0.001 with the optimal extracting bandwidth. This technique provides a promising tool to extract randomness and prepare desired entropy sources for chaotic secure communication and random number generation.

Versatile Multimodality Imaging System Based on Detectorless and Scanless Optical Feedback Interferometry-A Retrospective Overview for A Prospective Vision.

In this retrospective compendium, we attempt to draw a "fil rouge" along fifteen years of our research in the field of optical feedback interferometry aimed at guiding the readers to the verge of new developments in the field. The general reader will be moved at appreciating the versatility and the still largely uncovered potential of the optical feedback interferometry, for both sensing and imaging applications. By discovering the broad range of available wavelengths (0.4-120 µm), the different types of suitable semiconductor lasers (Fabry-Perot, distributed feedback, vertical-cavity, quantum-cascade), and a number of unconventional tenders in multi-axis displacement, ablation front progression, self-referenced measurements, multispectral, structured light feedback imaging and compressive sensing, the specialist also could find inspirational suggestions to expand his field of research.

Ultrafast control of fractional orbital angular momentum of microlaser emissions.

On-chip integrated laser sources of structured light carrying fractional orbital angular momentum (FOAM) are highly desirable for the forefront development of optical communication and quantum information-processing technologies. While integrated vortex beam generators have been previously demonstrated in different optical settings, ultrafast control and sweep of FOAM light with low-power control, suitable for high-speed optical communication and computing, remains challenging. Here we demonstrate fast control of the FOAM from a vortex semiconductor microlaser based on fast transient mixing of integer laser vorticities induced by a control pulse. A continuous FOAM sweep between charge 0 and charge +2 is demonstrated in a 100 ps time window, with the ultimate speed limit being established by the carrier recombination time in the gain medium. Our results provide a new route to generating vortex microlasers carrying FOAM that are switchable at GHz frequencies by an ultrafast control pulse.

Picosecond ultrasonics with miniaturized semiconductor lasers.

There is a great desire to extend ultrasonic techniques to the imaging and characterization of nanoobjects. This can be achieved by picosecond ultrasonics, where by using ultrafast lasers it is possible to generate and detect acoustic waves with frequencies up to terahertz and wavelengths down to nanometers. In our work we present a picosecond ultrasonics setup based on miniaturized mode-locked semiconductor lasers, whose performance allows us to obtain the necessary power, pulse duration and repetition rate. Using such a laser, we measure the ultrasonic echo signal with picosecond resolution in a 112 nm thick Al film deposited on a semiconductor substrate. We show that the obtained signal is as good as the signal obtained with a standard bulky mode-locked Ti-Sa laser. The experiments pave the way for designing integrated portable picosecond ultrasonic setups on the basis of miniaturized semiconductor lasers.

Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing.

Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity Q-factor and population inversion conditions. We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum well nanowire laser structures, revealing high Q-factors of 1250 ± 90 corresponding to end-facet reflectivities of R = 0.73 ± 0.02. By using optimised direct-indirect band alignment in the active region, we demonstrate a well-refilling mechanism providing a quasi-four-level system leading to multi-nanosecond lasing and record low room temperature lasing thresholds (~6 µJ cm-2 pulse-1) for III-V nanowire lasers. Our findings demonstrate a highly promising new route towards continuously operating silicon-integrated nanolaser elements.

Conformal Coating of Freestanding Particles by Vapor-Phase Infiltration.

A novel atomic layer method for encapsulating individual micro- and nano-particles with thin (sub-10-nm) dielectric films is presented. This method leverages the diffusion of vapor-phase precursors through an underlying inert polymer film to achieve growth of a metal oxide film on all sides of the particle simultaneously; even on the side that is in contact with the substrate. Crucially, the deposition is performed on stationary particles and does not require an agitation mechanism or a special reaction chamber. Here, conformal coatings of alumina are shown to improve stability in aqueous environments for two optically-relevant particles: compound semiconductor laser microparticles and lead halide perovskite nanocrystals.

Mid-Infrared Lasing in Lead Sulfide Subwavelength Wires on Silicon.

Vapor-liquid-solid (VLS) growth of nanoscale or subwavelength scale semiconductor wires (nanowires) has been proven to be an important and effective approach to producing high-quality, substrate insensitive photonic materials with a flexible and ever-expanding coverage of wavelengths for lasing and other photonic applications. However, the materials and lasing demonstrations have so far been limited to mostly ultraviolet to visible wavelengths, with a few exceptions in the short-wavelength infrared range. A further extension to longer wavelengths (such as mid-infrared, MIR) using narrower band gap semiconductors encounters severe challenges: the ever decreasing radiative efficiency due to the Auger and other nonradiative channels with wavelengths demands extremely high material quality and significantly narrows the material choices. This situation is very unsatisfactory, given many important applications that demand materials and lasers of subwavelength scales for MIR wavelengths in an integrated platform, especially on silicon. Here we report our results on lasing demonstration in MIR (3-4 µm) based on a unique combination of high-quality material growth on a silicon substrate and the choice of an intrinsically strong MIR material in lead sulfide (PbS). Lasing is demonstrated from single wires both on the original silicon substrate and on the sapphire substrates after transferring, with sizes of lasing wires down to below half of the normalized volume (volume of wires divided by the wavelength cubed) and operating temperature up to 180 K. Such subwavelength wire lasers could be important for a wide range of MIR applications on silicon-based integrated photonic platforms, such as chemical and environmental sensing, free-space communications, and many others.

Donor-Acceptor Type Pendant Conjugated Molecules Based on a Triazine Center with Depressed Intramolecular Charge Transfer Characteristics as Gain Media for Organic Semiconductor Lasers.

A set of fluorene-capped pendant conjugated molecules (T-m and T-p), which consist of a triazine center with three carbazole substituents as the donor-acceptor (D-A) type pendant structure, were designed, synthesized, and investigated as gain media for organic semiconductor lasers (OSLs). In particular, varying the capping positions of the fluorene units on the pendant core structures results in significantly different intramolecular charge transfer (ICT) properties, where T-m manifested depressed ICT characteristic and high fluorescence quantum yield. The lowest amplified spontaneous emission (ASE) threshold in neat films was recorded as 1.9 µJ cm-2 for T-m and 83.8 µJ cm-2 for T-p, which indicated that the depressed ICT characteristics in the case of T-m help to enhance the ASE properties. Remarkably, the ASE threshold remained almost unchanged and the ASE spectra showed very small shifts (within 1 nm) for T-m with film samples annealed up to 180 °C in open air. In contrast, its linear counterpart 2FEtCz-m showed a clearly increased ASE threshold upon annealing above 100 °C. The results suggest that the selective construction of conjugated pendant molecules with depressed ICT characteristics is beneficial for finely modulating the optical and electrical properties as well as improving the thermostability and photostability, which manifests the great potential as a robust gain media for OSLs.

Extracting more light for vertical emission: high power continuous wave operation of 1.3-µm quantum-dot photonic-crystal surface-emitting laser based on a flat band.

For long distance optical interconnects, 1.3-µm surface-emitting lasers are key devices. However, the low output power of several milliwatts limits their application. In this study, by introducing a two-dimensional photonic-crystal and using InAs quantum dots as active materials, a continuous-wave, 13.3-mW output power, 1.3-µm wavelength, room-temperature surface-emitting laser is achieved. In addition, such a device can be operated at high temperatures of up to 90 °C. The enhanced output power results from the flat band structure of the photonic crystal and an extra feedback mechanism. Surface emission is realized by photonic crystal diffraction and thus the distributed Bragg reflector is eliminated. The proposed device provides a means to overcome the limitations of low-power 1.3-µm surface-emitting lasers and increase the number of applications thereof.

Low-Threshold Non-Doped Deep Blue Lasing from Monodisperse Truxene-Cored Conjugated Starbursts with High Photostability.

Herein, the photophysical, morphological, optical gain characteristics of a set of trigonal monodisperse starburst conjugated macromolecules (Tr1-Tr4) have been systematically investigated in order to elucidate the influence of the molecular structures on their optoelectronic performance. With increasing the oligofluorene arm length, absorption spectra were red-shifted progressively, whereas an increase in photoluminescence quantum yields (PLQYs) and optical gain coefficients, and a corresponding reduction in amplified spontaneous emission (ASE) thresholds and loss coefficients were observed for Tr1-Tr3 except for Tr4. The results indicate that the effective conjugation length become saturated for Tr3 in this system. Impressively, the resulting molecules manifested very low ASE thresholds (4.4-11.6 µJ cm-2 ) with high photostability, as well as high thermal stability. One dimensional distributed feedback (DFB) lasers exhibited a minimum lasing threshold of 10.38 nJ pulse-1 (0.86 kW cm-2 , 4.325 µJ cm-2 ) for Tr3. It should be emphasized that the ASE threshold of Tr1-Tr4 was nearly unchanged from room temperature to 200 °C. The results suggest that this kind of truxene-cored conjugated starbursts with high photostability and low lasing thresholds are rather promising gain media for organic semiconductor lasers.