Cleavage of the Robust Silicon-Fluorine σ-Bond Allows Silicon-Carbon Bond Formation: Synthetic Strategies Toward Ortho-Silyl Aryl Phosphonates.

A straightforward, mild, and transition metal-free three-component coupling reaction involving arynes, phosphites, and silyl fluorides was developed through Si-F bond activation.  Although the Si-F bond is one of the strongest bonds, Si-C bond formation via Si-F bond cleavage with the assistance of bidentate silicon and phosphonium Lewis acids has been successfully achieved.  This unprecedented strategy provides a facile approach for synthesizing ortho-silyl-substituted aryl phosphonates.  Notably, this method allows the use of not only dialkylarylsilyl fluorides and diarylalkylsilyl fluorides but also triarylsilyl fluorides as coupling partners, which is uncommon in the field of arylsilane synthesis.  Furthermore, a variety of ortho-silyl-substituted aryl phosphonates were produced in moderate to good yields with broad functional group tolerance.  Additionally, the versatility of ortho-silyl-substituted aryl phosphonates was demonstrated by the elaboration of the products into a range of silicon-containing compounds.

Development of cellulose acetate poly acrylonitrile (CAPA)-SiC/epoxy coating to mitigate corrosion of copper in chloride containing solutions.

A new conducting polymer of the cellulose acetate poly acrylonitrile (CAPA)-SiC composite was produced using an in situ oxidative polymerization technique in an aqueous medium. SiC was synthesized from Cinachyrella sp. as a source of carbon and silicon at 1200 °C under an argon atmosphere via a catalytic reduction process. The structure and morphology of the CAPA-SiC composite were characterized using surface area studies (BET), X-ray diffraction (XRD), Fourier transformation infrared spectroscopy (FT-IR), and surface morphology (SEM & TEM). To protect copper, the produced CAPA-SiC composite was mixed with commercial epoxy paint using a casting technique, and the copper surface was coated with the three components of the CAPA-SiC/epoxy paint mixture. The corrosion inhibition improvement of the CAPA-SiC/paint coating was assessed using electrochemical impedance spectroscopy followed by Tafel polarization measurements in a 3.5 wt% NaCl solution. The corrosion protection ability of the CAPA-SiC/epoxy coating was found to be outstanding at 97.4% when compared to that of a CAPA/paint coating. SEM and XRD were used to illustrate the coating on the copper surface.

Material Removal Mechanisms of Polycrystalline Silicon Carbide Ceramic Cut by a Diamond Wire Saw.

Polycrystalline silicon carbide (SiC) is a highly valuable material with crucial applications across various industries. Despite its benefits, processing this brittle material efficiently and with high quality presents significant challenges. A thorough understanding of the mechanisms involved in processing and removing SiC is essential for optimizing its production. In this study, we investigated the sawing characteristics and material removal mechanisms of polycrystalline silicon carbide (SiC) ceramic using a diamond wire saw. Experiments were conducted with high wire speeds of 30 m/s and a maximum feed rate of 2.0 mm/min. The coarseness value (Ra) increased slightly with the feed rate. Changes in the diamond wire during the grinding process and their effects on the grinding surface were analyzed using scanning electron microscopy (SEM), laser confocal microscopy, and focused ion beam (FIB)-transmission electron microscopy (TEM). The findings provide insights into the grinding mechanisms. The presence of ductile grinding zones and brittle fracture areas on the ground surface reveals that external forces induce dislocation and amorphization within the grain structure, which are key factors in material removal during grinding.

Ceramic Matrix Composite Cyclic Ablation Behavior under Oxyacetylene Torch.

To study the ablation properties and differences of plain-woven SiC/SiC composites under single and cyclic ablation. The ablation test of plain-woven SiC/SiC composites was conducted under an oxyacetylene torch. The results indicate that the mass ablation rate of cyclic ablation is lower than that of single ablation, whereas the line ablation rate is higher. Macro-microstructural characterization revealed the presence of white oxide formed by silica on the surface of the ablation center region. The fibers in the central region of the ablation were ablated layer by layer, and the broken fiber bundles exhibited a spiky morphology with numerous silica particles attached. The oxide layer on the surface and the silica particles on the fibers, which are in the molten state formed in the high-temperature ablation environment, contribute to resisting ablation. Thermal shock during cyclic ablation also played a role in the ablation process. The thermal shock causes cracks in the fiber bundles and matrix of the SiC/SiC composites. This study helps to apply SiC/SiC composite to complex thermal shock environments.

Enhancement of Microwave Heating Technology for Emulsified Asphalt Mixtures Using SiC-Fe3O4 Composite Material.

The application of microwave heating technology can significantly enhance the water evaporation rate of emulsified asphalt mixtures post paving. To improve the microwave absorption and curing performance of these mixtures, SiC-Fe3O4 composite material (SF) was incorporated. This addition aims to enhance the microwave absorption efficiency and accelerate the curing process of emulsified asphalt mixtures under microwave heating. This study begins with an analysis of the microwave absorption principles pertinent to emulsified asphalt mixtures. Subsequently, the microwave heating temperature fields of ordinary emulsified asphalt mixture (EAM), SiC emulsified asphalt mixture (S-EAM), Fe3O4 emulsified asphalt mixture (F-EAM), and SiC-Fe3O4 emulsified asphalt mixture (SF-EAM) were simulated using COMSOL Multiphysics finite element software (COMSOL 6.2). The early strength variations in SF-EAM under different microwave heating durations were then examined through adhesion tests, leading to the proposal of a microwave heat curing process for SF-EAM. Finally, the wear resistance, water damage resistance, rutting resistance, and skid resistance of SF-EAM post-microwave curing were evaluated through wet wheel wear tests, wheel track deformation tests, and road friction coefficient tests. The results indicate that the optimal microwave heating time is 90 s, with the microwave absorption performance of the materials ranked as follows: EAM, S-EAM, F-EAM, and SF-EAM, from lowest to highest. The road performance of SF-EAM complies with specification requirements, and its wear resistance, water damage resistance, and rutting resistance are notably improved after microwave heating.

Research on the Corrosion Resistance of Electrodeposited Ni-SiC Composites Constructed for Steel Storage Tank Application.

In this paper, the effects of the SiC phase incorporated in Ni substrate deposits on storage tank steel during electrodeposition at different current densities are explored. The microstructure, phase content, and corrosion resistance of the resulting Ni-SiC composites were investigated by scanning electron microscopy (SEM) matched with energy disperse spectroscopy (EDS), X-ray diffraction (XRD), and an electrochemical workstation, respectively. SEM micrographs and EDS results show that at 2.5 A/dm2, the composites presented a smooth and compact structure with high SiC content, while at 1.8 or 3.2 A/dm2, it became uneven and loose in structure with low SiC content. XRD patterns showed that the nickel grain size of composites firstly increased and then decreased with the growth of the current density. Notably, the Ni-SiC composite produced at 2.5 A/dm2 possessed a higher corrosion potential (-0.507 V) and lower corrosion current density (2.439 µA/cm2), illustrating that its excellent anti-corrosion ability was superior than that of other two composites. Hence, SiC co-deposited at 2.5 A/dm2 conducted as a protective barrier and inhibited the corrosion rate against a corrosion medium of Cl- and SO42- ions. In addition, the corrosion relationship illustrated that the SiC content of Ni-SiC composite firstly increased and then decreased with the growth of the current density, while the corrosion weight loss of Ni-SiC composites firstly decreased and then increased.

Aging Ni(OH)2 on 3C-SiC Photoanodes to Achieve a High Photovoltage of 1.1 V and Enhanced Stability for Solar Water Splitting in Strongly Alkaline Solutions.

Photoelectrochemical (PEC) water splitting is a promising approach to directly convert solar energy to renewable and storable hydrogen. However, the very low photovoltage and serious corrosion of semiconductor photoelectrodes in strongly acidic or alkaline electrolytes needed for water splitting severely impede the practical application of this technology. In this work, we demonstrate a facile approach to fabricate a high-photovoltage, stable photoanode by depositing Ni(OH)2 cocatalyst on cubic silicon carbide (3C-SiC), followed by aging in 1.0 M NaOH at room temperature for 40 h without applying electrochemical bias. The aged 3C-SiC/Ni(OH)2 photoanode achieves a record-high photovoltage of 1.10 V, an ultralow onset potential of 0.10 V vs the reversible hydrogen electrode, and enhanced stability for PEC water splitting in the strongly alkaline solution (pH = 13.6). This aged photoanode also exhibits excellent in-air stability, demonstrating identical PEC water-splitting performance for more than 400 days. We find that the aged Ni(OH)2 dramatically promotes the hole transport at the photoanode/electrolyte interface, thus significantly enhancing the photovoltage and overall PEC performance. Furthermore, the oxygen evolution reaction (OER) activity and the phase transitions of the Ni(OH)2 electrocatalyst before and after aging are systematically investigated. We find that the aging process is critical for the formation of the relatively stable and highly active Fe-doped ß-NiOOH, which accounts for the enhanced OER activity and stability of the PEC water splitting. This work provides a simple and effective approach to fabricate high-photovoltage and stable photoanodes, bringing new premise toward solar fuel development.

Thermal Transport at the AlN-SiC Interface and Grain Boundary of AlN.

AlN is deposited on silicon carbide (SiC) for high-power electronics; in these devices, AlN acts as both a buffer layer for the growth of the active device and a thermal conductor. However, the mechanism of thermal transport through the AlN-SiC interfaces and through grain boundaries of AlN has not been clearly analyzed, even though AlN forms grain boundaries during the deposition process. The thermal properties of the AlN-SiC interface and the inversion domain boundaries (IDBs) of AlN were examined by a phonon transport model based on a nonequilibrium Green function formalism and first-principles calculations. The interface and grain boundary models were designed, and the thermal resistances (TRs) and origins of TR were examined. The TRs of the AlN-SiC interface and the IDB of AlN are much higher than the TRs of AlN and SiC of relevant thickness. Elemental intermixing and vacancy formation were modeled. The formation of charge-balanced defect of VAl + 3ON is thermodynamically favorable compared to other defects, indicating that ON induces formation of VAl. The charge-balanced defect combining VAl and ON increases the TRs of both AlN-SiC interfaces and AlN grain boundaries because vacancy defects induce larger changes in mass than all other defects, and TRs are proportional to changes in mass. In addition, VAl defects are increased by excess ON, resulting in a continuous increase in TR, and then, the calculated thermal boundary resistance (TBR) of the AlN-SiC interface with increased density of VAl by excess ON reaches the experimental TBR. Therefore, it is expected that the large increase in TR by the formation of VAl + ON would be suppressed by controlling the low O density during synthesis.

Novel 3D printed bioactive SiC orthopedic screw promotes bone growth associated activities by macrophages, neurons, and osteoblasts.

Ceramic additive manufacturing currently relies on binders or high-energy lasers, each with limitations affecting final product quality and suitability for medical applications. To address these challenges, our laboratory has devised a surface activation technique for ceramic particles that eliminates the necessity for polymer binders or high-energy lasers in ceramic additive manufacturing. We utilized this method to 3D print bioactive SiC orthopedic screws and evaluated their properties. The study's findings reveal that chemical oxidation of SiC activated its surface, enabling 3D printing of orthopedic screws in a binder jet printer. Post-processing impregnation with NaOH and/or NH4OH strengthened the scaffold by promoting silica crystallization or partial conversion of silicon oxide into silicon nitride. The silica surface of the SiC 3D printed orthopedic screws facilitated osteoblast and neuron adhesion and extensive axon synthesis. The silicate ions released from the 3D printed SiC screws favorably modulated macrophage immune responses toward an M1 phenotype as indicated by the inhibition of TNFα secretions and of reactive oxygen species (ROS) expression along with the promotion of IL6R shedding. In contrast, under the same experimental conditions, Ti ions released from Ti6Al4V discs promoted macrophage TNFα secretion and ROS expression. In vivo tests demonstrated direct bone deposition on the SiC scaffold and a strong interfacial bond between the implanted SiC and bone. Immunostaining showed innervation, mineralization, and vascularization of the newly formed bone at the interface with SiC. Taken altogether, the 3D printed SiC orthopedic screws foster a favorable environment for wound healing and bone regeneration. The novel 3D printing method, based on ceramic surface activation represents a significant advancement in ceramic additive manufacturing and is applicable to a wide variety of materials.

Residual Stress and Warping Analysis of the Nano-Silver Pressureless Sintering Process in SiC Power Device Packaging.

Chip bonding, an essential process in power semiconductor device packaging, commonly includes welding and nano-silver sintering. Currently, most of the research on chip bonding technology focuses on the thermal stress analysis of tin-lead solder and nano-silver pressure-assisted sintering, whereas research on the thermal stress analysis of the nano-silver pressureless sintering process is more limited. In this study, the pressureless sintering process of nano-silver was studied using finite element software, with nano-silver as an interconnect material. Using the control variable method, we analyzed the influences of sintering temperature, cooling rate, solder paste thickness, and solder paste area on the residual stress and warping deformation of power devices. In addition, orthogonal experiments were designed to optimize the parameters and determine the optimal combination of the process parameters. The results showed that the maximum residual stress of the module appeared on the connection surface between the power chip and the nano-silver solder paste layer. The module warping deformation was convex warping. The residual stress of the solder layer increased with the increase in sintering temperature and cooling rate. It decreased with the increase in coating thickness. With the increase in the coating area, it showed a wave change. Each parameter influenced the stress of the solder layer in this descending order: sintering temperature, cooling rate, solder paste area, and solder paste thickness. The residual stress of the nano-silver layer was 24.83 MPa under the optimal combination of the process parameters and was reduced by 29.38% compared with the original value of 35.162 MPa.

Process parameters optimization of EDM for hybrid aluminum MMC using hybrid optimization technique.

This study explores how machining parameters affect Surface Roughness (SR), Tool Wear Rate (TWR), and Material Removal Rate (MRR) during Electrical Discharge Machining (EDM) of a hybrid aluminum metal matrix composite (AMMC). The composite includes 6 % Silicon carbide (SiC) and 6 % Boron carbide (B4C) in an Aluminum 7075 (Al7075) matrix. A combined optimization approach was used to balance these factors, evaluating Pulse ON time, Current, Voltage, and Pulse OFF time. Response Surface Methodology (RSM) optimized single responses, while multi-response optimization employed a hybrid method combining the Entropy Weight Method (EWM), Taguchi approach, TOPSIS, and GRA. Analysis of Variance (ANOVA) assessed parameter significance, revealing substantial impacts on SR, MRR, and EWR. Based on TOPSIS and GRA, optimized parameters achieved a desirable balance: high MRR (0.4172, 0.5240 mm³/min), minimal EWR (0.0068, 0.0103 mm³/min), and acceptable SR (10.3877, 9.1924 µm) based on EWM-weighted priorities. Confirmation experiments validated a 15 % improvement in the closeness coefficient, and a 16 % improvement in the Grey relational grade, which considers combined SR, MRR, and EWR performance. Scanning Electron Microscope (SEM) analysis of surfaces machined with optimal parameters showed minimal debris, cracks, and no recast layer, indicating high surface integrity. This research enhances EDM optimization for AMMC, achieving efficiency in machining, minimizing tool wear, and meeting surface quality requirements.

Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma.

This study explores the impact of varying discharge gas compositions on the etching performance of silicon carbide (SiC) in a heptafluoroisopropyl methyl ether (HFE-347mmy)/O2/Ar plasma. SiC is increasingly favored for high-temperature and high-power applications due to its wide bandgap and high dielectric strength, but its chemical stability makes it challenging to etch. This research explores the use of HFE-347mmy as a low-global-warming-potential (GWP) alternative to the conventional high-GWP fluorinated gasses that are typically used in plasma etching. By examining the behavior of SiC etch rates and analyzing the formation of fluorocarbon films and Si-O bonds, this study provides insights into optimizing plasma conditions for effective SiC etching, while addressing environmental concerns associated with high-GWP gasses.

Design and Microwave Absorption Performance Study of SiC-Fe3O4 Emulsified Asphalt Mixture.

To address the challenges of slow curing speed and suboptimal microwave absorption during the paving of cold-mixed and cold-laid asphalt mixtures, this study introduces SiC-Fe3O4 composite material (SF) into emulsified asphalt mixtures to enhance microwave absorption and accelerate curing via microwave heating. Initially, based on the maximum density curve theory, an appropriate mineral aggregate gradation was designed, and the optimal ratio of emulsified asphalt mixture was determined through mixing tests, cohesion tests, wet wheel wear tests, and load wheel sand adhesion tests. Subsequently, the influence of SF content on the mixing performance of emulsified asphalt mixtures was analyzed through mixing and consistency tests. Finally, the microwave absorption performance of the mixture was evaluated by designing microwave heating tests under different conditions, using temperature indicators and quality indicators. The experimental results indicate that when SF content ranges from 0% to 4%, the mixing performance of the emulsified asphalt mixture meets specification requirements. The dosage of SF, SF composite ratio, and microwave power significantly impact microwave absorption performance, whereas environmental temperature has a relatively minor effect. The optimal mix ratio for the emulsified asphalt mixture is mineral aggregate:modified emulsified asphalt:water:cement = 100:12.8:6:1. The ideal SF dosage is 4%, with an optimal SiC to Fe3O4 composite ratio of 1:1, and a suitable microwave power range of 600-1000 W.

Electrochemical Corrosion Behavior and the Related Mechanism of Ti3SiC2/Cu Composites in a Strong Acid Environment.

The electrochemical corrosion behaviors of Ti3SiC2/Cu composites in harsh media including dilute HNO3 and concentrated H2SO4 were studied in detail and the related corrosion mechanisms were explored. Under open-circuit potential, the corrosion resistance of Ti3SiC2/Cu in dilute HNO3 was worse than that in concentrated H2SO4. In dilute HNO3, Ti3SiC2/Cu exhibited a typical passivation character with a narrow passivation interval. During the corrosion process, the dissolution of Cu-Si compounds resulted in the destruction of the passivation layer on the surface. Additionally, with the increasing of the potentials, the oxidation of Cu and Si atoms led to the generation of the oxide film again on the surface. In concentrated H2SO4, the Ti3SiC2/Cu composite was covered by a double-layered passivation layer, which was composed of an internal layer of TiO2 and an external layer of Cu2O and SiO2. This was because Cu diffused into the surface and was oxidized into Cu2O, which formed a denser oxidized film with SiO2. In addition, it was found that Ti3SiC2/Cu has better corrosion resistance in concentrated H2SO4.

Silicon Carbide Nanowire Based Integrated Electrode for High Temperature Supercapacitors.

Silicon carbide (SiC) single crystals have great prospects for high-temperature energy storage due to their robust structural stability, ultrahigh power output, and superior temperature stability. However, energy density is an essential challenge for SiC-based devices. Herein, a facile two-step strategy is proposed for the large-scale synthesis of a unique architecture of SiC nanowires incorporating MnO2 for enhanced supercapacitors (SCs), arising from the synergy effect between the SiC nanowires as a highly conductive skeleton and the MnO2 with numerous active sites. The SiC@MnO2 integrated electrode-based SCs with ionic liquid (IL) electrolytes were assembled and delivered outstanding energy and power density, as well as a great lifespan at 150 °C. This impressive work offers a novel avenue for the practical application of SiC-based electrochemical energy storage devices with high energy density under high temperatures.

Multiplexed Fluoro-electrochemical Single-Molecule Counting Enabled by SiC Semiconducting Nanofilm.

A major challenge for ultrasensitive analysis is the high-efficiency determination of different target single molecules in parallel with high accuracy. Herein, we developed a quantitative fluoro-electrochemical imaging approach for direct multiplexed single-molecule counting with a SiC-nanofilm-modified indium tin oxide transparent electrode. The nanofilm could control local pH through proton-coupled electron transfer in a lower potential range and further induce direct electrochemical oxidation of the dye molecules with a higher applied potential. The fluoro-electrochemical responses of immobilized single molecules with different pH values and redox behaviors could thus be distinguished within the same fluorescence channels. This method yields nonamplified direct counting of single molecules, as indicated by excellent linear responses in the picomolar range. The successful distinction of seven different randomly mixed dyes underscores the versatility and efficacy of the proposed method in the highly accurate determination of single dye molecules, paving the way for highly parallel single-molecule detection for diverse applications.

Enhancing Defect-Induced Dipole Polarization Strategy of SiC@MoO3 Nanocomposite Towards Electromagnetic Wave Absorption.

Defect engineering in transition metal oxides semiconductors (TMOs) is attracting considerable interest due to its potential to enhance conductivity by intentionally introducing defects that modulate the electronic structures of the materials. However, achieving a comprehensive understanding of the relationship between micro-structures and electromagnetic wave absorption capabilities remains elusive, posing a substantial challenge to the advancement of TMOs absorbers. The current research describes a process for the deposition of a MoO3 layer onto SiC nanowires, achieved via electro-deposition followed by high-temperature calcination. Subsequently, intentional creation of oxygen vacancies within the MoO3 layer was carried out, facilitating the precise adjustment of electromagnetic properties to enhance the microwave absorption performance of the material. Remarkably, the SiC@MO-t4 sample exhibited an excellent minimum reflection loss of - 50.49 dB at a matching thickness of 1.27 mm. Furthermore, the SiC@MO-t6 sample exhibited an effective absorption bandwidth of 8.72 GHz with a thickness of 2.81 mm, comprehensively covering the entire Ku band. These results not only highlight the pivotal role of defect engineering in the nuanced adjustment of electromagnetic properties but also provide valuable insight for the application of defect engineering methods in broadening the spectrum of electromagnetic wave absor ption effectiveness. SiC@MO-t samples with varying concentrations of oxygen vacancies were prepared through in-situ etching of the SiC@MoO3 nanocomposite. The presence of oxygen vacancies plays a crucial role in adjusting the band gap and local electron distribution, which in turn enhances conductivity loss and induced polarization loss capacity. This finding reveals a novel strategy for improving the absorption properties of electromagnetic waves through defect engineering.

Crack-Resistant Si-C Hybrid Microspheres for High-Performance Lithium-Ion Battery Anodes.

To effectively solve the challenges of rapid capacity decay and electrode crushing of silicon-carbon (Si-C) anodes, it is crucial to carefully optimize the structure of Si-C active materials and enhance their electron/ion transport dynamic in the electrode. Herein, a unique hybrid structure microsphere of Si/C/CNTs/Cu with surface wrinkles is prepared through a simple ultrasonic atomization pyrolysis and calcination method. Low-cost nanoscale Si waste is embedded into the pyrolysis carbon matrix, cleverly combined with the flexible electrical conductivity carbon nanotubes (CNTs) and copper (Cu) particles, enhancing both the crack resistance and transport kinetics of the entire electrode material. Remarkably, as a lithium-ion battery anode, the fabricated Si/C/CNTs/Cu electrode exhibits stable cycling for up to 2300 cycles even at a current of 2.0 A g-1, retaining a capacity of ≈700 mAh g-1, with a retention rate of 100% compared to the cycling started at a current of 2.0 A g-1. Additionally, when paired with an NCM523 cathode, the full cell exhibits a capacity of 135 mAh g-1 after 100 cycles at 1.0 C. Therefore, this synthesis strategy provides insights into the design of long-life, practical anode electrode materials with micro/nano-spherical hybrid structures.

Molecular dynamics analysis of subsurface brittleness mechanism of nanocrystalline 3C-SiC rough friction surface.

To study the effect of polycrystalline 3C-SiC rough friction surface on the mechanism of subsurface brittleness during nanocrystalline grinding. Initial grinding models of polycrystalline 3C-SiC and diamond abrasive grains on rough friction surfaces are developed using molecular dynamics methods and the Voronoi method for constructing polycrystalline abrasive grains. The processing mechanism of 3C-SiC is analyzed by post-processing methods such as dislocation defect analysis, atomic arrangement analysis and stress analysis. At 2.6 nm, "stress concentration" occurs between the abrasive particles and the workpiece, forming irregular force shapes. The larger the grain size, the smaller the crystal hardness, the greater the possibility of crystal fracture, and it is obvious in the crystal of larger grains. At 8 nm, the crystal breaks and creates vacancies. The roughness of the polycrystalline 3C-SiC friction surface and the cross-cutting mechanism between grains with grain boundaries are found to be effective in ameliorating the damage in the subsurface layer.

Principles and Methods for Improving the Thermoelectric Performance of SiC: A Potential High-Temperature Thermoelectric Material.

Thermoelectric materials that can convert thermal energy to electrical energy are stable and long-lasting and do not emit greenhouse gases; these properties render them useful in novel power generation devices that can conserve and utilize lost heat. SiC exhibits good mechanical properties, excellent corrosion resistance, high-temperature stability, non-toxicity, and environmental friendliness. It can withstand elevated temperatures and thermal shock and is well suited for thermoelectric conversions in high-temperature and harsh environments, such as supersonic vehicles and rockets. This paper reviews the potential of SiC as a high-temperature thermoelectric and third-generation wide-bandgap semiconductor material. Recent research on SiC thermoelectric materials is reviewed, and the principles and methods for optimizing the thermoelectric properties of SiC are discussed. Thus, this paper may contribute to increasing the application potential of SiC for thermoelectric energy conversion at high temperatures.