Pulsed DPOAEs in serial measurements : Combined analysis paradigm of simultaneously occurring changes in hearing thresholds and DPOAEs.

BACKGROUND: To date, there is no consensus on how to standardize the assessment of ototoxicity in serial measurements. For the diagnosis of damage to the cochlear amplifier, measurement methods are required that have the highest possible test-retest reliability and validity for detecting persistent damage. Estimated distortion-product thresholds (LEDPT) based on short-pulse distortion-product otoacoustic emission (DPOAE) level maps use individually optimal DPOAE stimulus levels and allow reliable quantitative estimation of cochlea-related hearing loss. MATERIALS AND METHODS: Hearing thresholds were estimated objectively using LEDPT and subjectively using modified Békésy tracking audiometry (LTA). Recordings were performed seven times within three months at 14 frequencies (f2 = 1-14 kHz) in 20 ears (PTA4 (0.5-4 kHz) < 20 dB HL). Reconstruction of the DPOAE growth behavior as a function of the stimulus levels L1, L2 was performed on the basis of 21 DPOAE amplitudes. A numerical fit of a nonlinear mathematical function to the three-dimensional DPOAE growth function yielded LEDPT for each stimulus frequency. For the combined analysis, probability distributions of hearing thresholds (LTA, LEDPT), DPOAE levels (LDP), and combinations thereof were determined. RESULTS: LTA and LEDPT each exhibited a test-retest reliability with a median of absolute differences (AD) of 3.2 dB and 3.3 dB, respectively. Combining LEDPT, LDP, and LTA into a single parameter yielded a significantly smaller median AD of 2.0 dB. CONCLUSION: It is expected that an analysis paradigm based on a combination of LEDPT, suprathreshold LDP, and fine-structure-reduced LTA would achieve higher test performance (sensitivity and specificity), allowing reliable detection of pathological or regenerative changes in the outer hair cells.

Intan Technologies integrated circuits can produce analog-to-digital conversion artifacts that affect neural signal acquisition.

Objective.Intan Technologies' integrated circuits (ICs) are valuable tools for neurophysiological data acquisition, providing signal amplification, filtering, and digitization from many channels (up to 64 channels/chip) at high sampling rates (up to 30 kSPS) within a compact package (⩽9× 7 mm). However, we found that the analog-to-digital converters (ADCs) in the Intan RHD2000 series ICs can produce artifacts in recorded signals. Here, we examine the effects of these ADC artifacts on neural signal quality and describe a method to detect them in recorded data.Approach.We identified two types of ADC artifacts produced by Intan ICs: 1) jumps, resulting from missing output codes, and 2) flatlines, resulting from overrepresented output codes. We identified ADC artifacts in neural recordings acquired with Intan RHD2000 ICs and tested the repeated performance of 17 ICsin vitro. With the on-chip digital-signal-processing disabled, we detected the ADC artifacts in each test recording by examining the distribution of unfiltered ADC output codes.Main Results.We found larger ADC artifacts in recordings using the Intan RHX data acquisition software versions 3.0-3.2, which did not run the necessary ADC calibration command when the inputs to the Intan recording controller were rescanned. This has been corrected in the Intan RHX software version 3.3. We found that the ADC calibration routine significantly reduced, but did not fully eliminate, the occurrence and size of ADC artifacts as compared with recordings acquired when the calibration routine was not run (p< 0.0001). When the ADC calibration routine was run, we found that the artifacts produced by each ADC were consistent over time, enabling us to sort ICs by performance.Significance.Our findings call attention to the importance of evaluating signal quality when acquiring electrophysiological data using Intan Technologies ICs and offer a method for detecting ADC artifacts in recorded data.

Semiconductor Optical Amplifiers with Wide Gain Bandwidth and Enhanced Polarization Insensitivity Based on Tensile-Strained Quantum Wells.

The paper presents a wide-bandwidth, low-polarization semiconductor optical amplifier (SOA) based on strained quantum wells. By enhancing the material gain of quantum wells for TM modes, we have extended the gain bandwidth of the SOA while reducing its polarization sensitivity. Through a combination of tilted waveguide design and cavity surface optical thin film design, we have effectively reduced the cavity surface reflectance of the SOA, thus decreasing device transmission losses and noise figure. At a wavelength of 1550 nm and a drive current of 1.4 A, the output power can reach 188 mW, with a small signal gain of 36.4 dB and a 3 dB gain bandwidth of 128 nm. The linewidth broadening is only 1.032 times. The polarization-dependent gain of the SOA is below 1.4 dB, and the noise figure is below 5.5 dB. The device employs only I-line lithography technology, offering simple fabrication processes and low costs yet delivering outstanding and stable performance. The designed SOA achieves wide gain bandwidth, high gain, low polarization sensitivity, low linewidth broadening, and low noise, promising significant applications in the wide-bandwidth optical communication field across the S + C + L bands.

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers.

Polarization-insensitive semiconductor optical amplifiers (SOAs) in all-optical networks can improve the signal-light quality and transmission rate. Herein, to reduce the gain sensitivity to polarization, a multi-quantum-well SOA in the 1550 nm band is designed, simulated, and developed. The active region mainly comprises the quaternary compound InGaAlAs, as differences in the potential barriers and wells of the components cause lattice mismatch. Consequently, a strained quantum well is generated, providing the SOA with gain insensitivity to the polarization state of light. In simulations, the SOA with ridge widths of 4 µm, 5 µm, and 6 µm is investigated. A 3 dB gain bandwidth of >140 nm is achieved with a 4 µm ridge width, whereas a 6 µm ridge width provides more output power and gain. The saturated output power is 150 mW (21.76 dB gain) at an input power of 0 dBm but increases to 233 mW (13.67 dB gain) at an input power of 10 dBm. The polarization sensitivity is <3 dBm at -20 dBm. This design, which achieves low polarization sensitivity, a wide gain bandwidth, and high gain, will be applicable in a wide range of fields following further optimization.

Design of an on-chip wavelength conversion device assisted by an erbium-ytterbium co-doped waveguide amplifier.

In current documented studies, it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2 µm band, generally falling below -20.0 dB. To address this issue, we present a novel wavelength conversion device assisted by a waveguide amplifier, incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier, thereby achieving a notable conversion efficiency exceeding 0 dB. The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter, which enables an upsurge in conversion efficiency to -15.54 dB under 100 mW of pump power. Furthermore, the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB. Avoiding the use of external optical amplifiers, this device enables efficient and high-bandwidth wavelength conversion, showing promising applications in various fields, such as optical communication, sensing, imaging, and beyond.

Optical modification of nonlinear crystals for quasi-parametric chirped-pulse amplification.

Quasi-parametric chirped-pulse amplification (QPCPA), which features a theoretical peak power much higher than those obtained with Ti:sapphire laser or optical parametric chirped-pulse amplification, is promising for future ultra-intense lasers. The doped rare-earth ion used for idler dissipation is critical for effective QPCPA, but is usually not compatible with traditional crystals. Thus far, only one dissipative crystal of Sm3+-doped yttrium calcium oxyborate has been grown and applied. Here we introduce optical means to modify traditional crystals for QPCPA applications. We theoretically demonstrate two dissipation schemes by idler frequency doubling and sum-frequency generation with an additional laser. In contrast to absorption dissipation, the proposed nonlinear dissipations ensure not only high signal efficiency but also high small-signal gain. The demonstrated ability to optically modify crystals will facilitate the wide application of QPCPA.

The Origin Along the Cochlea of Otoacoustic Emissions Evoked by Mid-Frequency Tone Pips.

PURPOSE: Tone-pip-evoked otoacoustic emissions (PEOAEs) are transient-evoked otoacoustic emissions (OAEs) that are hypothesized to originate from reflection of energy near the best-frequency (BF) cochlear place of the stimulus frequency. However, individual PEOAEs have energy with a wide range of delays. We sought to determine whether some PEOAE energy is consistent with having been generated far from BF. METHODS: PEOAEs from 35 and 47 dB SPL tone pips were obtained by removing pip-stimulus energy by subtracting the ear-canal sound pressure from scaled-down 59 dB SPL tone pips (which evoke relatively small OAEs). PEOAE delays were measured at each peak in the PEOAE absolute-value waveforms. While measuring PEOAEs and auditory-nerve compound action potentials (CAPs), amplification was blocked sequentially from apex to base by cochlear salicylate perfusion. The perfusion time when a CAP was reduced identified when the perfusion reached the tone-pip BF place. The perfusion times when each PEOAE peak was reduced identified where along the cochlea it received cochlear amplification. PEOAEs and CAPs were measured simultaneously using one pip frequency in each ear (1.4 to 4 kHz across 16 ears). RESULTS: Most PEOAE peaks received amplification primarily between the BF place and 1-2 octaves basal of the BF place. PEOAE peaks with short delays received amplification basal of BF place. PEOAE peaks with longer delays sometimes received amplification apical of BF place, consistent with previous stimulus-frequency-OAE results. CONCLUSION: PEOAEs provide information about cochlear amplification primarily within ~ 1.5 octave of the tone-pip BF place, not about regions > 3 octaves basal of BF.

Neural Adaptation at Stimulus Onset and Speed of Neural Processing as Critical Contributors to Speech Comprehension Independent of Hearing Threshold or Age.

Background: It is assumed that speech comprehension deficits in background noise are caused by age-related or acquired hearing loss. Methods: We examined young, middle-aged, and older individuals with and without hearing threshold loss using pure-tone (PT) audiometry, short-pulsed distortion-product otoacoustic emissions (pDPOAEs), auditory brainstem responses (ABRs), auditory steady-state responses (ASSRs), speech comprehension (OLSA), and syllable discrimination in quiet and noise. Results: A noticeable decline of hearing sensitivity in extended high-frequency regions and its influence on low-frequency-induced ABRs was striking. When testing for differences in OLSA thresholds normalized for PT thresholds (PTTs), marked differences in speech comprehension ability exist not only in noise, but also in quiet, and they exist throughout the whole age range investigated. Listeners with poor speech comprehension in quiet exhibited a relatively lower pDPOAE and, thus, cochlear amplifier performance independent of PTT, smaller and delayed ABRs, and lower performance in vowel-phoneme discrimination below phase-locking limits (/o/-/u/). When OLSA was tested in noise, listeners with poor speech comprehension independent of PTT had larger pDPOAEs and, thus, cochlear amplifier performance, larger ASSR amplitudes, and higher uncomfortable loudness levels, all linked with lower performance of vowel-phoneme discrimination above the phase-locking limit (/i/-/y/). Conslusions: This study indicates that listening in noise in humans has a sizable disadvantage in envelope coding when basilar-membrane compression is compromised. Clearly, and in contrast to previous assumptions, both good and poor speech comprehension can exist independently of differences in PTTs and age, a phenomenon that urgently requires improved techniques to diagnose sound processing at stimulus onset in the clinical routine.

On-Chip Annealing Using Embedded Micro-Heater for Highly Sensitive and Selective Gas Detection.

The demand for gas sensing systems that enable fast and precise gas recognition is growing rapidly. However, substantial challenges arise from the complex fabrication process of sensor arrays, time-consuming data transmission to an external processor, and high energy consumption in multi-stage data processing. In this study, a gas sensing system using on-chip annealing for fast and power-efficient gas detection is proposed. By utilizing a micro-heater embedded in the gas sensor, the sensing material of adjacent sensors in the same substrate can be easily varied without further fabrication steps. The response to oxidizing gas is constrained in metal oxide (MOX) sensing material with small grain sizes, as the depletion width of grain cannot extend beyond the grain size during the gas reaction. On the other hand, the response to reducing gases and humidity, which decrease the depletion width, is less affected by grain sizes. A readout circuit integrating a differential amplifier and dual FET-type gas sensors effectively emphasizes the response to oxidizing gases by canceling the response to reducing gases and humidity. The selective on-chip annealing method is applicable to various MOX sensing materials, demonstrating its potential for application in commercial fields due to its simplicity and expandability.

Design of a Compact 2-6 GHz High-Efficiency and High-Gain GaN Power Amplifier.

In this paper, a novel wideband power amplifier (PA) operating in the 2-6 GHz frequency range is presented. The proposed PA design utilizes a combination technique consisting of a distributed equalization technique, multiplexing the power supply network and matching network technique, an LR dissipative structure, and an RC stability network technique to achieve significant bandwidth while maintaining superior gain flatness, high efficiency, high gain, and compact size. For verification, a three-stage PA using the combination technique is designed and implemented in a 0.25 µm GaN high-electron-mobility transistor (HEMT) process. The fabricated prototype demonstrates a saturated output power of 4 W, a power gain of 21 dB, a gain flatness of ±0.6 dB, a power-added efficiency of 39-46%, and a fractional bandwidth of 100% under the operating conditions of drain voltage 28 V (continuous wave) and gate voltage -2.6 V. Moreover, the chip occupies a compact size of only 2.51 mm × 1.97 mm.

1 V Tunable High-Quality Universal Filter Using Multiple-Input Operational Transconductance Amplifiers.

This paper presents a new multiple-input single-output voltage-mode universal filter employing four multiple-input operational transconductance amplifiers (MI-OTAs) and three grounded capacitors suitable for low-voltage low-frequency applications. The quality factor (Q) of the filter functions can be tuned by both the capacitance ratio and the transconductance ratio. The multiple inputs of the OTA are realized using the bulk-driven multiple-input MOS transistor technique. The MI-OTA-based filter can also offer many filtering functions without additional circuitry requirements, such as an inverting amplifier to generate an inverted input signal. The proposed filter can simultaneously realize low-pass, high-pass, band-pass, band-stop, and all-pass responses, covering both non-inverting and inverting transfer functions in a single topology. The natural frequency and the quality factors of all the filtering functions can be controlled independently. The natural frequency can also be electronically controlled by tuning the transconductances of the OTAs. The proposed filter uses a 1 V supply voltage, consumes 120 µW of power for a 5 µA setting current, offers 40 dB of dynamic range and has a third intermodulation distortion of -43.6 dB. The performances of the proposed circuit were simulated using a 0.18 µm TSMC CMOS process in the Cadence Virtuoso System Design Platform to confirm the performance of the topology.

Design of Mixed-Mode Analog PID Controller with CFOAs.

The design of a mixed-mode proportional-integral-derivative (PID) controller circuit using current-feedback operational amplifiers (CFOAs) as active components is proposed. With the same circuit topology, the proposed configuration of three CFOAs, four resistors, and two capacitors is capable of performing the PID controller in each of the following four modes: voltage mode, trans-admittance mode, current mode, and trans-impedance mode. Numerous mathematical analyses are conducted to determine the controller's performance under both ideal and non-ideal conditions. Additionally, the mixed-mode second-order lowpass filter is suggested and also used to examine the workability of the proposed mixed-mode PID controller in a feedback control structure. The proposed PID controller is implemented with the commercially available IC-type CFOA AD844, and the simulation results are presented to illustrate the functionality of the controller and its closed-loop control system. According to the findings, the total power consumption of the proposed PID controller is 0.348 W, with symmetrical supply voltages of ±9 V. It also has a temperature variation of less than 0.2% over the AD844's usable range. Monte Carlo statistical analysis results revealed that the gain responses of the controller exhibited a deviation of no more than 7.72% from the theoretical value. The controlled filter in a closed-loop control system has a 43% faster rise time and peak time than the uncontrolled filter in all four modes of operation. It also has a steady-state error less than 0.2 mV for voltage responses and 0.72 µA for current responses.

Differential BroadBand (1-16 GHz) MMIC GaAs mHEMT Low-Noise Amplifier for Radio Astronomy Applications and Sensing.

A broadband differential-MMIC low-noise amplifier (DLNA) using metamorphic high-electron-mobility transistors of 70 nm in Gallium Arsenide (70 nm GaAs mHEMT technology) is presented. The design and results of the performance measurements of the DLNA in the frequency band from 1 to 16 GHz are shown, with a high dynamic range, and a noise figure (NF) below 1.3 dB is obtained. In this work, two low-noise amplifiers (LNAs) were designed and manufactured in the OMMIC foundry: a dual LNA, which we call balanced, and a differential LNA, which we call DLNA. However, the paper focuses primarily on DLNA because of its differential architecture. Both use a 70 nm GaAs mHEMT space-qualified technology with a cutoff frequency of 300 GHz. With a low power bias Vbias/Ibias (5 V/40.5 mA), NF < 1.07 dB "on wafer" was achieved, from 2 to 16 GHz; while with the measurements made "on jig", NF = 1.1 dB, from 1 to 10 GHz. Furthermore, it was obtained that NF < 1.5 dB, from 1 to 16 GHz, with a figure of merit equal to 145.5 GHz/mW. Finally, with the proposed topology, several LNAs were designed and manufactured, both in the OMMIC process and in other foundries with other processes, such as UMS. The experimental results showed that the NF of the DLNA MMIC with multioctave bandwidth that was built in the frequency range of the L-, S-, C-, and X-bands was satisfactory.

[Pulsed DPOAEs in serial measurements : Combined analysis paradigm of simultaneously occurring changes in hearing thresholds and DPOAEs. German version]. / Gepulste DPOAE in Verlaufsmessungen : Kombiniertes Analyseparadigma von gleichzeitig auftretenden Veränderungen in Hörschwellen und DPOAE.

BACKGROUND: To date, there is no consensus on how to standardize the assessment of ototoxicity in serial measurements. For the diagnosis of damage to the cochlear amplifier, measurement methods are required that have the highest possible test-retest reliability and validity for detecting persistent damage. Estimated distortion-product thresholds (LEDPT) based on short-pulse distortion-product otoacoustic emission (DPOAE) level maps use individually optimal DPOAE stimulus levels and allow reliable quantitative estimation of cochlea-related hearing loss. MATERIALS AND METHODS: Hearing thresholds were estimated objectively using LEDPT and subjectively using modified Békésy tracking audiometry (LTA). Recordings were performed seven times within three months at 14 frequencies (f2 = 1-14 kHz) in 20 ears (PTA4 (0.5-4 kHz) < 20 dB HL). Reconstruction of the DPOAE growth behavior as a function of the stimulus levels L1, L2 was performed on the basis of 21 DPOAE amplitudes. A numerical fit of a nonlinear mathematical function to the three-dimensional DPOAE growth function yielded LEDPT for each stimulus frequency. For the combined analysis, probability distributions of hearing thresholds (LTA, LEDPT), DPOAE levels (LDP), and combinations thereof were determined. RESULTS: LTA and LEDPT each exhibited a test-retest reliability with a median of absolute differences (AD) of 3.2 dB and 3.3 dB, respectively. Combining LEDPT, LDP, and LTA into a single parameter yielded a significantly smaller median AD of 2.0 dB. CONCLUSION: It is expected that an analysis paradigm based on a combination of LEDPT, suprathreshold LDP, and fine-structure-reduced LTA would achieve higher test performance (sensitivity and specificity), allowing reliable detection of pathological or regenerative changes in the outer hair cells.

Something in Our Ears Is Oscillating, but What? A Modeller's View of Efforts to Model Spontaneous Emissions.

When David Kemp discovered "spontaneous ear noise" in 1978, it opened up a whole new perspective on how the cochlea works. The continuous tonal sound emerging from most healthy human ears, now called spontaneous otoacoustic emissions or SOAEs, was an unmistakable sign that our hearing organ must be considered an active detector, not just a passive microphone, just as Thomas Gold had speculated some 30 years earlier. Clearly, something is oscillating as a byproduct of that sensitive inbuilt detector, but what exactly is it? Here, we give a chronological account of efforts to model SOAEs as some form of oscillator, and at intervals, we illustrate key concepts with numerical simulations. We find that after many decades there is still no consensus, and the debate extends to whether the oscillator is local, confined to discrete local sources on the basilar membrane, or global, in which an assembly of micro-mechanical elements and basilar membrane sections, coupled by inner ear fluid, interact over a wide region. It is also undecided whether the cochlear oscillator is best described in terms of the well-known Van der Pol oscillator or the less familiar Duffing or Hopf oscillators. We find that irregularities play a key role in generating the emissions. This paper is not a systematic review of SOAEs and their properties but more a historical survey of the way in which various oscillator configurations have been applied to modelling human ears. The conclusion is that the difference between the local and global approaches is not clear-cut, and they are probably not mutually exclusive concepts. Nevertheless, when one sees how closely human SOAEs can be matched to certain arrangements of oscillators, Gold would no doubt say we are on the right track.

Construction of an exogenously and endogenously Co-activated DNA logic amplifier for highly reliable intracellular MicroRNA imaging.

DNA-based molecular amplifiers offer significant promise for molecular-level disease diagnosis and treatment, yet tailoring their activation for precise timing and localization remains a challenge. Herein, we've pioneered a dual activation strategy harnessing external light and internal ATP to create a highly controlled DNA logic amplifier (FDLA) for accurate miRNA monitoring in cancer cells. The FDLA was constructed by tethered the two functionalized catalytic hairpin assembly (CHA) hairpin modules (ATP aptamer sealed hairpin aH1 and photocleavable (PC-linker) sites modified hairpin pH2) to DNA tetrahedron (DTN). The FDLA system incorporates ATP aptamers and PC-linkers as logic control units, allowing them to respond to both exogenous UV light and endogenous ATP present within cancer cells. This response triggers the release of CHA hairpin modules, enabling amplified FRET miRNA imaging through an AND-AND gate. The DTN structure could improve the stability of FDLA and accelerate the kinetics of the strand displacement reaction. It is noteworthy that the UV and ATP co-gated DNA circuit can control the DNA bio-computing at specific time and location, offering spatial and temporal capabilities that can be harnessed for miRNA imaging. Furthermore, the miRNA-sensing FDLA amplifier demonstrates reliable imaging of intracellular miRNA with minimal background noise and false-positive signals. This highlights the feasibility of utilizing both exogenous and endogenous regulatory strategies to achieve spatial and temporal control of DNA molecular circuits within living cancer cells. Such advancements hold immense potential for unraveling the correlation between miRNA and associated diseases.

Coherent beam combining of two all-PM thulium-doped fiber chirped pulse amplifiers.

In this paper, we report a coherent beam combining (CBC) system that involves two thulium-doped all-polarization maintaining (PM) fiber chirped pulse amplifiers. Through phase-locking the two channels via a fiber stretcher by using the stochastic parallel gradient descent (SPGD) algorithm, a maximum average power of 265 W is obtained, with a CBC efficiency of 81% and a residual phase error of λ/17. After de-chirping by a pair of diffraction gratings, the duration of the combined laser pulse is compressed to 690 fs. Taking into account the compression efficiency of 90% and the main peak energy proportion of 91%, the corresponding peak power is calculated to be 4 MW. The laser noise characteristics before and after CBC are examined, and the results indicate that the CBC would degrade the low frequency relative intensity noise (RIN), of which the integration is 1.74% in [100 Hz, 2 MHz] at the maximum combined output power. In addition, the effects of the nonlinear spectrum broadening during chirped pulse amplification on the CBC efficiency are also investigated, showing that a higher extent of pulse stretching is effective in alleviating the spectrum broadening and realizing a higher output power with decent combining efficiency.

Bimetallic nanoparticles as cascade sensitizing amplifiers for low-dose and robust cancer radio-immunotherapy.

Radiotherapy (RT) is one of the most feasible and routinely used therapeutic modalities for treating malignant tumors. In particular, immune responses triggered by RT, known as radio-immunotherapy, can partially inhibit the growth of distantly spreading tumors and recurrent tumors. However, the safety and efficacy of radio-immunotherapy is impeded by the radio-resistance and poor immunogenicity of tumor. Herein, we report oxaliplatin (IV)-iron bimetallic nanoparticles (OXA/Fe NPs) as cascade sensitizing amplifiers for low-dose and robust radio-immunotherapy. The OXA/Fe NPs exhibit tumor-specific accumulation and activation of OXA (II) and Fe2+ in response to the reductive and acidic microenvironment within tumor cells. The cascade reactions of the released metallic drugs can sensitize RT by inducing DNA damage, increasing ROS and O2 levels, and amplifying the immunogenic cell death (ICD) effect after RT to facilitate potent immune activation. As a result, OXA/Fe NPs-based low-dose RT triggered a robust immune response and inhibited the distant and metastatic tumors effectively by a strong abscopal effect. Moreover, a long-term immunological memory effect to protect mice from tumor rechallenging is observed. Overall, the bimetallic NPs-based cascade sensitizing amplifier system offers an efficient radio-immunotherapy regimen that addresses the key challenges.

Design and Realization of Ultra-Wideband Differential Amplifiers for M-Sequence Radar Applications.

Amplification of wideband high-frequency and microwave signals is a fundamental element within every high-frequency circuit and device. Ultra-wideband (UWB) sensor applications use circuits designed for their specific application. The article presents the analysis, design, and implementation of ultra-wideband differential amplifiers for M-sequence-based UWB applications. The designed differential amplifiers are based on the Cherry-Hooper structure and are implemented in a low-cost 0.35 µm SiGe BiCMOS semiconductor process. The article presents an analysis and realization of several designs focused on different modifications of the Cherry-Hooper amplifier structure. The proposed amplifier modifications are focused on achieving the best result in one main parameter's performance. Amplifier designs modified by capacitive peaking to achieve the largest bandwidth, amplifiers with the lowest possible noise figure, and designs focused on achieving the highest common mode rejection ratio (CMRR) are described. The layout of the differential amplifiers was created and the chip was manufactured and wire-bonded to the QFN package. For evaluation purposes, a high-frequency PCB board was designed. Schematic simulations, post-layout simulations, and measurements of the individual parameters of the designed amplifiers were performed. The designed and fabricated ultra-wideband differential amplifiers have the following parameters: a supply current of 100-160 mA at -3.3 V or 3.3 V, bandwidth from 6 to 12 GHz, gain (at 1 GHz) from 12 to 16 dB, noise figure from 7 to 13 dB, and a common mode rejection ratio of up to 70 dB.

A 26-28 GHz, Two-Stage, Low-Noise Amplifier for Fifth-Generation Radio Frequency and Millimeter-Wave Applications.

This paper presents a high-gain low-noise amplifier (LNA) operating at the 5G mm-wave band. The full design combines two conventional cascode stages: common base (CB) and common emitter (CS). The design technique reduces the miller effect and uses low-voltage supply and low-current-density transistors to simultaneously achieve high gain and low noise figures (NFs). The two-stage LNA topology is analyzed and designed using 0.25 µm SiGe BiCMOS process technology from NXP semiconductors. The measured circuit shows a small signal gain at 26 GHz of 26 dB with a gain error below 1 dB on the entire frequency band (26-28 GHz). The measured average NF is 3.84 dB, demonstrated over the full frequency band under 15 mA current consumption per stage, supplied with a voltage of 3.3 V.