Towards High-Performance Inverted Mesoporous Perovskite Solar Cell by Using Bathocuproine (BCP).

Perovskite solar cells (PSCs) are considered the most promising photovoltaic devices to replace silicon-based solar cells because of their low preparation cost and high photoelectric conversion efficiency (PCE). Reducing defects in perovskite films is an effective means to improve the efficiency of PSCs. In this paper, a lead chelator was selected and mixed into hole transport layers (HTLs) to design and prepare mesoporous PSCs with the structure of ITO/PTAA(BCP)/Al2O3/PVK/PCBM/BCP/Ag, and its modification effect on the buried interface at the bottom of the perovskite layer in the mesoporous structure was explored. The experimental results show that in the presence of mesoporous alumina, the lead chelator can still play a role in modifying the bottom of the perovskite film. The use of lead chelator as passivation material added to the HTL can effectively reduce the residue of dimethyl sulfoxide (DMSO) and decrease the defects at the bottom of the perovskite film, which dramatically improves the device performance. The PCE of the device is increased from 18.03% to 20.78%, which is an increase of 15%. The work in this paper provides an effective method to enhance the performance of PSCs.

Tin-Lead Perovskite Solar Cells with Preferred Crystal Orientation by Buried Interface Approach.

Mixed tin-lead perovskite solar cells (PSCs) have garnered much attention for their ideal bandgap and high environmental research value. However, poly (3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT: PSS), widely used as a hole transport layer (HTL) for Sn-Pb PSCs, results in unsatisfactory power conversion efficiency (PCE) and long-term stability of PSCs due to its acidity and moisture absorption. A synergistic strategy by incorporating histidine (HIS) into the PEDOT: PSS HTL is applied to simultaneously regulate the nucleation and crystallization of perovskite (PVK). HIS neutralizes the acidity of PEDOT: PSS and enhances conductivity. Especially, the coordination of the C═N and -COO- functional groups in the HIS molecule with Sn2+ and Pb2+ induces vertical growth of PVK film, resulting in the release of residual surface stress. Additionally, this strategy also optimizes the energy level alignment between the perovskite layer and the HTL, which improves charge extraction and transport. With these cooperative effects, the PCE of Sn-Pb PSCs reaches 21.46% (1 sun, AM1.5), maintaining excellent stability under a nitrogen atmosphere. Hence, the buried interface approach exhibits the potential for achieving high-performance and stable Sn-Pb PSCs.

Regulating the Grain-Growth Surface for Efficient Near-Infrared Perovskite Light-Emitting Diodes.

Metal halide perovskites hold great potential for next-generation light-emitting diodes (PeLEDs). Despite significant progress, achieving high-performance PeLEDs hinges on optimizing the interface between the perovskite crystal film and the charge transport layers, especially the buried interface, which serves as the starting point for perovskite growth. Here, we develop a bottom-up perovskite film modulation strategy using formamidine acetate (FAAc) to enhance the buried interface. This multifaceted approach facilitates the vertical-oriented growth of high-quality perovskites with minimized defects. Meanwhile, the in situ deprotonation between FA+ and ZnO could eliminate the hydroxyl (-OH) defects and modulate the energy level of ZnO. The resulting FAPbI3-PeLED exhibits a champion EQE of 23.84% with enhanced operational stability and suppressed EQE roll-off. This strategy is also successfully extended to other mixed-halide PeLEDs (e.g., Cs0.17FA0.83Pb(I0.75Br0.25)3), demonstrating its versatility as an efficient and straightforward method for enhancing the PeLEDs' performance.

Overcoming Microstructural Defects at the Buried Interface of Formamidinium-Based Perovskite Solar Cells.

Since the advent of formamidinium (FA)-based perovskite photovoltaics (PVs), significant performance enhancements have been achieved. However, a critical challenge persists: the propensity for void formation in the perovskite film at the buried perovskite-interlayer interface has a deleterious effect on device performance. With most emerging perovskite PVs adopting the p-i-n architecture, the specific challenge lies at the perovskite-hole transport layer (HTL) interface, with previous strategies to overcome this limitation being limited to specific perovskite-HTL combinations; thus, the lack of universal approaches represents a bottleneck. Here, we present a novel strategy that overcomes the formation of such voids (microstructural defects) through a film treatment with methylammonium chloride (MACl). Specifically, our work introduces MACl via a sequential deposition method, having a profound impact on the microstructural defect density at the critical buried interface. Our technique is independent of both the HTL and the perovskite film thickness, highlighting the universal nature of this approach. By employing device photoluminescence measurements and conductive atomic force microscopy, we reveal that when present, such voids impede charge extraction, thereby diminishing device short-circuit current. Through comprehensive steady-state and transient photoluminescence spectroscopy analysis, we demonstrate that by implementing our MACl treatment to remedy these voids, devices with reduced defect states, suppressed nonradiative recombination, and extended carrier lifetimes of up to 2.3 µs can be prepared. Furthermore, our novel treatment reduces the stringent constraints around antisolvent choice and dripping time, significantly extending the processing window for the perovskite absorber layer and offering significantly greater flexibility for device fabrication.

Multifunctional Modification of the Buried Interface in Mixed Tin-Lead Perovskite Solar Cells.

Mixed tin-lead perovskite solar cells can reach bandgaps as low as 1.2 eV, offering high theoretical efficiency and serving as base materials for all-perovskite tandem solar cells. However, instability and high defect densities at the interfaces, particularly the buried surface, have limited performance improvements. In this work, we present the modification of the bottom perovskite interface with multifunctional hydroxylamine salts. These salts can effectively coordinate the different perovskite components, having critical influences in regulating the crystallization process and passivating defects of varying nature. The surface modification reduced traps at the interface and prevented the formation of excessive lead iodide, enhancing the quality of the films. The modified devices presented fill factors reaching 81% and efficiencies of up to 23.8%. The unencapsulated modified devices maintained over 95% of their initial efficiency after 2000 h of shelf storage.

Bottom-Up Defect Modification Through Oily-Allicin Modified Buried Interface Achieving Highly Efficient and Stable Perovskite Solar Cells.

The buried interface properties of the perovskite solar cells (PSCs) play a crucial role in the power conversion efficiency (PCE) and operational stability. The metal-oxide/perovskite heterogeneous interfaces are highly defective and cause serious ion migration. However, the buried and unexposed bottom interface and simultaneous stabilization of grain boundaries receive less attention and effective solutions. To tackle this problem, a solid-liquid strategy is employed by introducing oily-additive allicin at the buried interface to passivate the shallow (VI and Vo) and deep traps (VPb and PbI). Interestingly, oily status allicin fills the pinholes at the heterointerface and wraps the perovskite grains, suppressing the ion migration during the photoaging process. As a result, an outstanding PCE of 25.07% is achieved with a remarkable fill factor (FF) of 84.03%. The modified devices can maintain 94.51% of the original PCE after light soaking under 1-sun illumination for 1000 h. This work demonstrates a buried interface modification method that employs an eco-friendly additive, which helps promote the development of PSCs with high performance and stability.

Boosting All-Perovskite Tandem Solar Cells by Revitalizing the Buried Tin-Lead Perovskite Interface.

Narrow-bandgap (NBG) mixed tin-lead (Sn-Pb) perovskite solar cells (PSCs) serve as crucial top subcells in all-perovskite tandem solar cells (TSCs). However, the prevalent use of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) hole transport layers (HTLs) in NBG PSCs compromises device efficiency and stability. To address this, the study proposes a revitalizing strategy for the buried interface of Sn-Pb perovskites by directly immersing acetylcholine chloride (ACh) into PEDOT: PSS. ACh acts as a proficient "diver," not only modulating the bottom PEDOT: PSS HTLs but also facilitating the reconstruction of the buried interface and significantly enhancing the quality of the top perovskite layers. This intervention with ACh prevents Sn2+ oxidation, mitigates buried defects, and encourages the growth of large, densely packed grains within Sn-Pb perovskites. Consequently, the optimized NBG PSCs exhibit significantly improved hole transport and reduced carrier recombination, achieving a steady-state efficiency of 22.98% with enhanced stability. Furthermore, these optimized NBG Sn-Pb cells enable highly efficient two-terminal and four-terminal all-perovskite TSCs, boasting steady-state efficiencies of 27.54% (certified at 26.41%) and 28.01%, respectively. This study emphasizes the importance of optimizing NBG PSCs through buried interface reconstruction, propelling the advancement of all-perovskite TSCs.

Glutathione-Coated Gold Nanoparticles Enabling Bifunctional Therapy at the Buried Interface for Efficient and UV-Resistant Perovskite Solar Cells.

Very recently, the poor contact between the perovskite and carrier selective layer has been regarded as a critical issue for improving the performance and stability of perovskite solar cells (PSCs). In this study, the buried interface of regularly structured PSCs has been targeted. Glutathione-coated gold nanoparticles (GSH-AuNPs) are used as double-sided passivating agents to improve the quality of the perovskite films. It has been demonstrated that the GSH-AuNPs interact strongly with the SnO2 underlayer and the upper perovskite layer, significantly reducing the defect densities of this interface. Thus, the power conversion efficiency (PCE) of the PSCs can be increased from 20.46% (control, 19.38%, IPCE corrected) to 22.22% (GSH-AuNPs modified, 21.10%, IPCE corrected) with notable enhancement in Voc and FF. Moreover, the strong interaction between the C═O groups of GSH-AuNPs and the undercoordinated Pb2+ species of the perovskite films inhibits the formation of metallic Pb0. As a result, the unencapsulated GSH-AuNPs-modified devices retained 80% of their initial PCEs after 1000 h at ambient conditions, with a relative humidity (RH) of 60 ± 5%. UV-resistant PSCs have also been demonstrated after introducing GSH-AuNPs. Therefore, our findings demonstrate the bidirectional therapy strategy as a feasible approach for achieving efficient and UV-resistant PSCs.

In Situ Buried Interface Engineering towards Printable Pb-Sn Perovskite Solar Cells.

High-efficiency Pb-Sn narrow-bandgap perovskite solar cells (PSCs) heavily rely on PEDOT:PSS as the hole-transport layer (HTL) owing to its excellent electrical conductivity, dopant-free nature, and facile solution processability. However, the shallow work function (WF) of PEDOT:PSS consequently results in severe minority carrier recombination at the perovskite/HTL interface. Here, we tackle this issue by an in situ interface engineering strategy using a new molecule called 2-fluoro benzylammonium iodide (FBI) that suppresses nonradiative recombination near the Pb-Sn perovskite (FA0.6MA0.4Pb0.4Sn0.6I3)/HTL bottom interface. The WF of PEDOT:PSS increases by 0.1 eV with FBI modification, resulting in Pb-Sn PSCs with 20.5% efficiency and an impressive VOC of 0.843 V. Finally, we have successfully transferred our in situ buried interface modification strategy to fabricate blade-coated FA0.6MA0.4Pb0.4Sn0.6I3 PSCs with 18.3% efficiency and an exceptionally high VOC of 0.845 V.

Defect Engineering at Buried Interface of Perovskite Solar Cells.

Perovskite solar cells (PSC) have developed rapidly since the past decade with the aim to produce highly efficient photovoltaic technology at a low cost. Recently, physical and chemical defects at the buried interface of PSC including vacancies, impurities, lattice strain, and voids are identified as the next formidable hurdle to the further advancement of the performance of devices. The presence of these defects has unfavorably impacted many optoelectronic properties in the PSC, such as band alignment, charge extraction/recombination dynamics, ion migration behavior, and hydrophobicity. Herein, a broad but critical discussion on various essential aspects related to defects at the buried interface is provided. In particular, the defects existing at the surface of the underlying charge transporting layer (CTL) and the bottom surface of the perovskite film are initially elaborated. In situ and ex situ characterization approaches adopted to unveil hidden defects are elucidated to determine their influence on the efficiency, operational stability, and photocurrent-voltage hysteresis of PSC. A myriad of innovative strategies including defect management in CTL, the introduction of passivation materials, strain engineering, and morphological control used to address defects are also systematically elucidated to catalyze the further development of more efficient, reliable, and commercially viable photovoltaic devices.

Synergistic Passivation on Buried Interface for Highly Efficient and Stable p-i-n Perovskite Solar Cells.

The properties of an interface at the hole transport layer (HTL)/perovskite layer are crucial for the performance and stability of perovskite solar cells (PVSCs), especially the buried interface between HTL and perovskite layer. Here, a molecular named potassium 1-trifluoroboratomethylpiperidine (3FPIP) assistant-modified perovskite bottom interface strategy is proposed to improve the charge transfer capability and balances energy level between HTL and perovskite. BF3 - in the 3FPIP molecule interacts with undercoordinated Pb2+ to passivate iodine vacancies and enhance PVSCs performance. Furthermore, the infiltration of K+ ions into perovskite molecules enhances the crystallinity and stability of perovskite. Therefore, the PVSCs with the buried interface treatment exhibit a champion performance of 24.6%. More importantly, the corresponding devices represent outstanding ambient stability, remaining at 92% of the initial efficiency after 1200 h. This work provides a new method of buried interface engineering with functional group synergy.

Strategic Buried Defect Passivation of Perovskite Emitting Layers by Guanidinium Chloride for High-Performance Pure Blue Perovskite Light Emitting Diodes.

Perovskite light-emitting diodes (PeLEDs) show promise for high-definition displays due to their exceptional electroluminescent properties. However, the performance of pure blue PeLEDs is hindered by the unfavorable ionic behavior of halides and the presence of defective antisites in blue-emitting perovskite materials. An unstable buried interface between charge transport layers and the perovskite emitting layer is a major issue that limits carrier transport and recombination behavior in PeLEDs. In this study, effective buried defect passivation of pure blue perovskite emitting layers by introducing guanidinium chloride (GACl) as a bottom-passivating layer is demonstrated. The GACl bottom layer not only passivates the point defects present at the buried interface but also provides chloride anions to suppress ion migration and halide vacancy formation. Along with the defect passivation, GACl also enforces phase purity of 2D layered structure in the perovskite emitting layers to improve crystallinity and optoelectronic properties. As a result, the PeLEDs with high brightness (1200 cd m-2) and excellent external quantum efficiency (6.61%) are achieved at a spectrally stable pure blue electroluminescence at 471 nm (band width = 17.63 nm). This study offers insights into the straightforward way for effective buried passivation for preparing high-performance PeLEDs.

Influence of Hole Transport Layers on Buried Interface in Wide-Bandgap Perovskite Phase Segregation.

Light-induced phase segregation, particularly when incorporating bromine to widen the bandgap, presents significant challenges to the stability and commercialization of perovskite solar cells. This study explores the influence of hole transport layers, specifically poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA) and [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz), on the dynamics of phase segregation. Through detailed characterization of the buried interface, we demonstrate that Me-4PACz enhances perovskite photostability, surpassing the performance of PTAA. Nanoscale analyses using in situ Kelvin probe force microscopy and quantitative nanomechanical mapping techniques elucidate defect distribution at the buried interface during phase segregation, highlighting the critical role of substrate wettability in perovskite growth and interface integrity. The integration of these characterization techniques provides a thorough understanding of the impact of the buried bottom interface on perovskite growth and phase segregation.

Enhancing the Efficiency and Stability of Inverted Formamidinium-Cesium Lead-Triiodide Perovskite Solar Cells through Lewis Base Pretreatment of Buried Interfaces.

Mixed components of formamidinium(FA) and cesium (Cs)-based perovskite solar cells are the most hopeful for commercialization owing to their excellent operational and phase stabilities, especially for devices with inverted structure. The nonradiative recombination of carriers can be effectively suppressed through interface optimization, therefore, the performance of devices can be improved. Notably, the buried interface emerges as critical aspects such as charge transport, charge recombination kinetics, and morphology of perovskite films. This study focuses on a straightforward yet effective approach to overcome buried interface challenges between organic polymers (poly(-triarylamine) (PTAA) and FACs-based perovskite films. The PTAA substrate is pretreated with a Lewis base known as 2-butynoic acid (BA) with a C═O functional group. First, it can be an interfacial buffering layer, harmonizing stress mismatch between the perovskite and PTAA layers, consequently optimizing crystallization and improving perovskite film quality. Second, Pb2+ defect can be passivated at the buried interface of the perovskite film through binding with the C═O group of the BA molecule. This dual-function strategy leads to a substantial enhancement in both photoelectric conversion efficiency (PCE) and stability of devices. Finally, the PCE of the device-modified buried interface with BA reaches an impressive 23.33%. Furthermore, unencapsulated devices with BA treatment maintain approximately 94% of their initial efficiency after aging at maximum power point tracking for 1000 h.

Buried interface modification and light outcoupling strategy for efficient blue perovskite light-emitting diodes.

Perovskite light-emitting diodes (PeLEDs) exhibit remarkable potential in the field of displays and solid-state lighting. However, blue PeLEDs, a key element for practical applications, still lag behind their green and red counterparts, due to a combination of strong nonradiative recombination losses and unoptimized device structures. In this report, we propose a buried interface modification strategy to address these challenges by focusing on the bottom-hole transport layer (HTL) of the PeLEDs. On the one hand, a multifunctional molecule, aminoacetic acid hydrochloride (AACl), is introduced to modify the HTL/perovskite interface to regulate the perovskite crystallization. Experimental investigations and theoretical calculations demonstrate that AACl can effectively reduce the nonradiative recombination losses in bulk perovskites by suppressing the growth of low-n perovskite phases and also the losses at the bottom interface by passivating interfacial defects. On the other hand, a self-assembly nanomesh structure is ingeniously developed within the HTLs. This nanomesh structure is meticulously crafted through the blending of poly-(9,9-dioctyl-fluorene-co-N-(4-butyl phenyl) diphenylamine) and poly (n-vinyl carbazole), significantly enhancing the light outcoupling efficiency in PeLEDs. As a result, our blue PeLEDs achieve remarkable external quantum efficiencies, 20.4% at 487 nm and 12.5% at 470 nm, which are among the highest reported values. Our results offer valuable insights and effective methods for achieving high-performance blue PeLEDs.

Eliminating Voids and Residual PbI2 beneath a Perovskite Film via Buried Interface Modification for Efficient Solar Cells.

The commercialization process of perovskite solar cells (PSCs) is markedly restricted by the power conversion efficiency (PCE) and long-term stability. During fabrication and operation, the bottom interface of the organic-inorganic hybrid perovskite layer frequently exhibits voids and residual PbI2, while these defects inevitably act as recombination centers and degradation sites, affecting the efficiency and stability of the devices. Therefore, the degradation and nonradiative recombination originating from the buried interface should be thoroughly resolved. Here, we report a multifunctional passivator by introducing malonic dihydrazide as an interfacial chemical bridge between the electron transport layer and the perovskite (PVK) layer. MADH with hydrazine groups improves the surface affinity of SnO2 and provides nucleation sites for the growth of PVK, leading to the reduced residual PbI2 and the voids resulting from the inhomogeneous solvent volatilization at the bottom interface. Meanwhile, the hydrazine group and carbonyl group synergistically coordinate with Pb2+ to improve the crystal growth environment, reducing the number of Pb-related defects. Eventually, the PCE of the PSCs is significantly enhanced benefiting from the reduced interfacial defects and the increased carrier transport. Moreover, the reductive nature of hydrazide further inhibits I2 generation during long-term operation, and the device retains 90% of the initial PCE under a 1 sun continuous illumination exposure of 700 h.

Improving Thermal Stability of High-Efficiency Methylammonium-Free Perovskite Solar Cells via Chloride Additive Engineering.

Tin dioxide (SnO2), in perovskite solar cells (PSCs), stands out as the material most suited to the electron transport layer (ETL), yielding advantages with regard to ease of preparation, high mobility, and favorable energy level alignment. Nonetheless, there is a chance that energy losses from defects in the SnO2 and interface will result in a reduction in the Voc. Consequently, optimizing the interfaces within solar cell devices is a key to augmenting both the efficiency and the stability of PSCs. Herein this present study, we introduced butylammonium chloride (BACl) into the SnO2 ETL. The resulting optimized SnO2 film mitigated interface defect density, thereby improving charge extraction. The robust bonding capability of negatively charged Cl- ions facilitated their binding with noncoordinated Sn4+ ions, effectively passivating defects associated with oxygen vacancies and enhancing charge transport within the SnO2 ETL. Concurrently, doped BA+ and Cl- diffused into the perovskite lattice, fostering perovskite grain growth and reducing the defects in perovskite. In comparison to the control device, the Voc saw a 70 mV increase, achieving a champion efficiency of 22.86%. Additionally, following 1000 h of ambient storage, the unencapsulated device based on SnO2 preburied with BACl retained around 90% of its initial photovoltaic conversion efficiency.

TiO2 Electron Transport Layer with p-n Homojunctions for Efficient and Stable Perovskite Solar Cells.

Low-temperature processed electron transport layer (ETL) of TiO2 that is widely used in planar perovskite solar cells (PSCs) has inherent low carrier mobility, resulting in insufficient photogenerated electron transport and thus recombination loss at buried interface. Herein, we demonstrate an effective strategy of laser embedding of p-n homojunctions in the TiO2 ETL to accelerate electron transport in PSCs, through localized build-in electric fields that enables boosted electron mobility by two orders of magnitude. Such embedding is found significantly helpful for not only the enhanced crystallization quality of TiO2 ETL, but the fabrication of perovskite films with larger-grain and the less-trap-states. The embedded p-n homojunction enables also the modulation of interfacial energy level between perovskite layers and ETLs, favoring for the reduced voltage deficit of PSCs. Benefiting from these merits, the formamidinium lead iodide (FAPbI3) PSCs employing such ETLs deliver a champion efficiency of 25.50%, along with much-improved device stability under harsh conditions, i.e., maintain over 95% of their initial efficiency after operation at maximum power point under continuous heat and illumination for 500 h, as well as mixed-cation PSCs with a champion efficiency of 22.02% and over 3000 h of ambient storage under humidity stability of 40%. Present study offers new possibilities of regulating charge transport layers via p-n homojunction embedding for high performance optoelectronics.

Improving Buried Interface Contact by Bidentate Anchoring for Inverted Perovskite Solar Cells.

Nickel oxide (NiOx) is a promising hole transport layer (HTL) to fabricate efficient and large-scale inverted perovskite solar cells (PSCs) due to its low cost and superior chemical stability. However, inverted PSCs based on NiOx are still lagging behind that of other HTL because of the poor quality of buried interface contact. Herein, a bidentate ligand, 4,6-bis (diphenylphosphino) phenoxazine (2DPP), is used to regulate the NiOx surface and perovskite buried interface. The diphosphine Lewis base in the 2DPP molecule can coordinate both with NiOx and lead ions at NiOx/perovskite interface, leading to high-quality perovskite films with minimized defects. It is found that the inverted PSCs with 2DPP-modified buried interface exhibit double advantages of being both fast charge extraction and reduced nonradiative recombination, which is a combination of multiple factors including favorable energetic alignment, improved interface contact and strong binding between NiOx/2DPP and perovskite. The optimal PSC based on 2DPP modification yields a champion power conversion efficiency (PCE) of 21.9%. The unencapsulated PSC maintains above 75% of its initial PCE in the air with a relative humidity (RH) of 30-40% for 1000 h.

Passivation of Sodium Benzenesulfonate at the Buried Interface of a High-Performance Wide-Bandgap Perovskite Solar Cell.

The phase segregation of wide-bandgap perovskite is detrimental to a device's performance. We find that Sodium Benzenesulfonate (SBS) can improve the interface passivation of PTAA, thus addressing the poor wettability issue of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine](PTAA). This improvement helps mitigate interface defects caused by poor contact between the perovskite and PTAA, reducing non-radiative recombination. Additionally, enhanced interface contact improves the crystallinity of the perovskite, leading to higher-quality perovskite films. By synergistically controlling the crystallization and trap passivation to reduce the phase segregation, SBS-modified perovskite solar cells (PSCs) achieved a power conversion efficiency (PCE) of 20.27%, with an open-circuit voltage (Voc) of 1.18 V, short-circuit current density (Jsc) of 20.93 mA cm-2, and fill factor (FF) of 82.31%.