Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma.

This study explores the impact of varying discharge gas compositions on the etching performance of silicon carbide (SiC) in a heptafluoroisopropyl methyl ether (HFE-347mmy)/O2/Ar plasma. SiC is increasingly favored for high-temperature and high-power applications due to its wide bandgap and high dielectric strength, but its chemical stability makes it challenging to etch. This research explores the use of HFE-347mmy as a low-global-warming-potential (GWP) alternative to the conventional high-GWP fluorinated gasses that are typically used in plasma etching. By examining the behavior of SiC etch rates and analyzing the formation of fluorocarbon films and Si-O bonds, this study provides insights into optimizing plasma conditions for effective SiC etching, while addressing environmental concerns associated with high-GWP gasses.

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper.

Correlations between physical properties linking film quality with wet etch rate (WER), one of the leading figures of merit, in plasma-enhanced atomic layer deposition (PEALD) grown silicon nitride (SiN x) films remain largely unresearched. Achieving a low WER of a SiN x film is especially significant in its use as an etch stopper for technology beyond 7 nm node semiconductor processing. Herein, we explore the correlation between the hydrogen concentration, hydrogen bonding states, bulk film density, residual impurity concentration, and the WERs of PEALD SiN x using Fourier transform infrared spectrometry, X-ray reflectivity, and spectroscopic ellipsometry, etc. PEALD SiN x films for this study were deposited using hexachlorodisilane and hollow cathode plasma source under a range of process temperatures (270-360 °C) and plasma gas compositions (N2/NH3 or Ar/NH3) to understand the influence of hydrogen concentration, hydrogen bonding states, bulk film density, and residual impurity concentration on the WER. Varying hydrogen concentration and differences in the hydrogen bonding states resulted in different bulk film densities and, accordingly, a variation in WER. We observe a linear relationship between hydrogen bonding concentration and WER as well as a reciprocal relationship between bulk film density and WER. Analogous to the PECVD SiN x processes, a reduction in hydrogen bonding concentration arises from either (1) thermal activation or (2) plasma excited species. However, unlike the case with silane (SiH4)-based PECVD SiN x, PEALD SiN x WERs are affected by residual impurities of Si precursors (i.e., chlorine impurity). Thus, possible wet etching mechanisms in HF in which the WER is affected by hydrogen bonding states or residual impurities are proposed. The shifts of amine basicity in SiN x due to different hydrogen bonding states and the changes in Si electrophilicity due to Cl impurity content are suggested as the main mechanisms that influence WER in the PEALD processes.

Fabrication of Through via Holes in Ultra-Thin Fused Silica Wafers for Microwave and Millimeter-Wave Applications.

Through via holes in fused silica are a key infrastructure element of microwave and millimeter-wave circuits and 3D integration. In this work, etching through via holes in ultra-thin fused silica wafers using deep reactive-ion etching (DRIE) and laser ablation was developed and analyzed. The experimental setup and process parameters for both methods are presented and compared. For DRIE, three types of mask materials including KMPR 1035 (Nippon Kayaku, Tokyo, Japan) photoresist, amorphous silicon and chromium-with their corresponding optimized processing recipes-were tested, aiming at etching through a 100 µm fused silica wafer. From the experiments, we concluded that using chromium as the masking material is the best choice when using DRIE. However, we found that the laser ablation method with a laser pulse fluence of 2.89 J/cm² and a pulse overlap of 91% has advantages over DRIE. The laser ablation method has a simpler process complexity, while offering a fair etching result. In particular, the sidewall profile angle is measured to be 75° to the bottom surface of the wafer, which is ideal for the subsequent metallization process. As a demonstration, a two-inch wafer with 624 via holes was processed using both technologies, and the laser ablation method showed better efficiency compared to DRIE.

Mechanistic Insight into Etching Chemistry and HF-Assisted Etching of MgO-Al2O3-SiO2 Glass-Ceramic.

The present study focuses on the etching conditions and mechanism of MgO-Al2O3-SiO2 glass-ceramic (MAS) in hydrofluoric acid (HF). The results show that the amorphous phase has 218 times higher etching rate than pure cordierite crystal at room temperature. In addition, the activation energies of cordierite and amorphous phases in the HF solution are 52.5 and 30.6 kJ/mol, respectively. The time (tad) taken for complete dissolution of the amorphous phase depends on the HF concentration (CHF). Based on the etching experiments, a new model is established and refined to assess the tad evolution. In addition, a highly crystalline cordierite phase, with the high specific surface area (59.4 m²·g-1) and mesoporous structure, has been obtained by HF etching. This paper presents novel insights into the etching chemistry and opens up avenues for further research in the area of cordierite-based catalytic ceramics.

A parameterization of the chemistry-normality dependence of bulk etch rate in a CR-39 detector.

An empirical relationship describing the bulk etch rate is formulated. The equation involves two free fitting parameters, which reproduce the bulk etch rate for CR-39 by alpha particles at different normalities of the etching solution. The values of the fitting parameters were obtained from the experimental data. This relationship is used to predict the bulk etch rate at different normalities.

Reactive Ion Etching in the Gaseous Electronics Conference RF Reference Cell.

This paper describes the results of using the GEC reference cell as a reactive ion etcher. Silicon wafers with layers of polysilicon and silicon dioxide on crystaline silicon patterned with photoresist have been investigated with fluorine and chlorine chemistries. Scanning electron microscopy (SEM), profilometry, and refraction techniques were used to determine the etch parameters such as etch rate, uniformity and selectivity. The discharges are in general monitored by measuring the optical emission spectroscopy and the bias voltages. For fluorine chemistries, etch rates ranged from 5 nm/min to 177 nm/min, and for chlorine chemistries, etch rates ranged from 25 nm/min to 90 nm/min. Depending upon the discharge and chemistry conditions, similar etch rates and etch patterns of different GEC cells were obtained. Etch rates and relative fluorine concentrations obtained from a commercial etcher were compared to the GEC reference cell and were found to be similar although the GEC cell generally gave lower etch rates than the commercial etcher.