ABSTRACT
The hybrid film of molybdenum oxide (MoO3) and poly(3,4-ethylenedyoxithiophene) polystyrene sulfonate (PEDOT:PSS) is a promising candidate for use as hole transport layer (HTL) in low-cost devices. A fast, controllable and economic process was used to fabricate high-performance HTLs by adding organotin (IV) semiconductors to the MoO3/PEDOT:PSS films. These hybrid films were fabricated by spin-coating and the MoO3/PEDOT:PSS-organotin (IV) complex films were characterized by infrared spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). Some mechanical and optical properties of the hybrid films were obtained and, to electrically characterize the hybrid films, hetero-junction glass/ITO/MoO3/PEDOT:PSS-organotin (IV) complex/Ag devices were prepared. Regarding the mechanical properties, the films have high plastic deformation, with a maximum stress of around 40 MPa and a Knoop hardness of 0.14. With respect to optical behavior, the films showed high transparency, with optical gap values between 2.8 and 3.5 eV and an onset gap of around 2.4 eV, typical of semiconductors. Additionally, the films in their respective devices show ambipolar and ohmic behavior with small differences depending on the substituent in organotin (IV) semiconductors. The MoO3/PEDOT:PSS matrix defines the mechanical behavior of the films and the tin complexes contribute their optoelectronic properties.
ABSTRACT
To achieve superior photovoltaic performance on Sb2S3 solid state solar cells (ssSCs), the concomitant development of efficient hole transport materials (HTMs) is required. Herein, a novel solution processed HTM obtained by mixing NiOx nanoparticles (NiOx-NP) and poly(3-hexylthiophene) (P3HT) is reported. These P3HT:NiOx-NP nanocomposite HTMs were obtained with different controlled concentrations of NiOx-NP using a common solvent. Incorporation of NiOx-NP significantly impacts on the structural and hole-transport layer properties of the nanocomposite films, which in turn contributes to improve the photovoltaic performance of the corresponding devices. Thus, Sb2S3 ssSCs based on HTM with an optimum concentration of NiOx-NP in P3HT, i.e. P3HT:2% NiOx-NP, yield a 50% improvement in the power conversion efficiency relative to control devices fabricated with pristine P3HT. The improved hole separation and injection at the Sb2S3/HTM interface, determined by steady-state photoluminescence quenching and electrochemical impedance spectroscopy studies, correlate well with the higher hole mobility of the nanocomposite and the current density and fill factor enhancements.
ABSTRACT
Fabrication of solution-processed perovskite solar cells (PSCs) requires the deposition of high quality films from precursor inks. Frequently, buffer layers of PSCs are formed from dispersions of metal oxide nanoparticles (NPs). Therefore, the development of trustable methods for the preparation of stable colloidal NPs dispersions is crucial. In this work, a novel approach to form very compact semiconducting buffer layers with suitable optoelectronic properties is presented through a self-functionalization process of the nanocrystalline particles by their own amorphous phase and without adding any other inorganic or organic functionalization component or surfactant. Such interconnecting amorphous phase composed by residual nitrate, hydroxide, and sodium ions, proved to be fundamental to reach stable colloidal dispersions and contribute to assemble the separate crystalline nickel oxide NPs in the final film, resulting in a very homogeneous and compact layer. A proposed mechanism behind the great stabilization of the nanoparticles is exposed. At the end, the self-functionalized nickel oxide layer exhibited high optoelectronic properties enabling perovskite p-i-n solar cells as efficient as 16.6% demonstrating the pertinence of the presented strategy to obtain high quality buffer layers processed in solution at room temperature.