ABSTRACT
In this paper, we report the first successful demonstration of the direct growth of high-quality two-dimensional (2D) MoS2 semiconductors on a flexible substrate using a 25-µm-thick Yttria-stabilized zirconia ceramic substrate. Few-layered MoS2 crystals grown at 800 °C showed a uniform crystal size of approximately 50 µm, which consisted of about 10 MoS2 layers. MoS2 crystals were characterized using energy-dispersive X-ray spectroscopy. Raman spectroscopy was performed to investigate the crystal quality under bending conditions. The Raman mapping revealed a good uniformity with a stable chemical composition of the MoS2 crystals. Our approach offers a simple and effective route to realize various flexible electronics based on MoS2. Our approach can be applied for MoS2 growth and for other 2D materials. Therefore, it offers a new opportunity that allows us to demonstrate high-performance flexible electronic/optoelectronic applications in a less expensive, simpler, and faster manner without sacrificing the intrinsic performance of 2D materials.
ABSTRACT
Objective @#To compare and analyze the effects of thermal etching on the shear strength of zirconia substrates and decorative ceramics.@*Methods@#A total of 20 specimens made with zirconia ceramics were randomly divided into an observation group and a control group with 10 cases in each group. The control group was treated with sandblasting, while the observation group was treated with sandblasting and thermal etching. The surface characteristics were examined by scanning electron microscope (SEM) and phase analysis of X-ray diffraction (XRD), and the shear strength was tested using a universal testing machine. The characteristics of surface destruction were examined by SEM.@*Results @#SEM showed that the peak structure was observed in both groups. The observation group exhibited deep fissures, and the control group exhibited small fissures. The diffraction peaks of the two groups are similar. The T (101) peak is the main peak, and both groups exhibit an M (111) peak. However, the peak intensity is relatively small. The relative levels of monoclinic zirconia were 15.16% in the observation group and 16.22% in the control group. The shear bond strength of the observation group was 24.74 ± 3.02 MPa, which was significantly higher than that of the control group at 21.09 ± 2.58 MPa. The difference was statistically significant (t=2.599, P=0.021). In the control group, the porcelain residue on the zirconia surface was minimal at low magnification, and the zirconia substrate was obviously exposed. The zirconia surface was similar to cristae obliqua at high magnification, and the porcelain exhibited a scattered distribution. In the observation group, a large amount of residual veneer porcelain remained on the zirconia surface at low magnification, but considerable porcelain was observed at high magnification.@*Conclusion@#Thermal etching and sandblasting treatment can improve the shear strength of zirconia substrate.
