Photonic page buffer based on GaAs multiple-quantum-well modulators bonded directly over active silicon complementary-metal-oxide-semiconductor (CMOS) circuits.

We present a 2-kbit, 50-Mpage/s, photonic first-in, first-out page buffer based on gallium arsenide/aluminium-gallium arsenide multiple-quantum-well diodes that are flip-chip bonded to submicrometer silicon complementary-metal-oxide-semiconductor circuits. This photonic chip provides nonvolatile storage (buffering), asynchronous-to-synchronous conversion, bandwidth smoothing, tolerance to jitter or skew, spatial format conversion, wavelength conversion, and independent flow control for the input and the output channels. It serves as an interface chip for parallel-accessed optical bit-plane data. It represents the first smart-pixel array that accomplishes the vertical integration of multiple-quantum-well modulators and detectors directly over active silicon VLSI circuits and provides over 340 transistors per optical input-output. Results from high-speed single-channel testing and real-time array operation of the photonic page buffer are reported.

Photonic page buffer based on GaAs multiple-quantum-well modulators bonded directly over active silicon complementary-metal-oxide-semiconductor (CMOS) circuits: errata.

Owing to printing errors, [Appl. Opt. 35, 2439 (1996)] several figures were illegible. The figures are reprinted and briefly reviewed.