A Review of 3D Modalities Used for the Diagnosis of Scoliosis.

Spine radiographs in the standing position are the recommended standard for diagnosing idiopathic scoliosis. Though the deformity exists in 3D, its diagnosis is currently carried out with the help of 2D radiographs due to the unavailability of an efficient, low-cost 3D alternative. Computed tomography (CT) and magnetic resonance imaging (MRI) are not suitable in this case, as they are obtained in the supine position. Research on 3D modelling of scoliotic spine began with multiplanar radiographs and later moved on to biplanar radiographs and finally a single radiograph. Nonetheless, modern advances in diagnostic imaging have the potential to preserve image quality and decrease radiation exposure. They include the DIERS formetric scanner system, the EOS imaging system, and ultrasonography. This review article briefly explains the technology behind each of these methods. They are compared with the standard imaging techniques. The DIERS system and ultrasonography are radiation free but have limitations with respect to the quality of the 3D model obtained. There is a need for 3D imaging technology with less or zero radiation exposure and that can produce a quality 3D model for diseases like adolescent idiopathic scoliosis. Accurate 3D models are crucial in clinical practice for diagnosis, planning surgery, patient follow-up examinations, biomechanical applications, and computer-assisted surgery.

Linearity and intermodulation distortion analysis of single and dual metal gate junctionless transistor.

Linearity and intermodulation distortion are very crucial parameters for RFICs design. Therefore, in this work, a detailed comparative analysis on linearity and intermodulation distortion of single metal (SMG) and double metal (DMG) double gate junction less transistor (JLT) is done using TCAD silvaco suite. Furthermore, the effects of temperature fluctuation, gate length variation, and gate material engineering on the linearity performance of both devices are also studied. A few significant figures of merit, including Voltage Intercept Point 2 (VIP2), Voltage Intercept Point 3 (VIP3), Third Order Intercept Power (IIP3), 1 dB Compression Point (P1dB), Third Order Intermodulation Distortion (IMD3), and the transconductance derivative parameters First Order Transconductance (gm1), Second Order Transconductance (gm2), and Third Order Transconductance (gm3) are used to assess the device linearity and intermodulation distortion of SMG and DMG JLT's. The findings show that higher VIP2, VIP3, IIP3, 1-dB compression point and lower gm3, IMD3 values are obtained for the SMG JLT device when compared to its counterpart DMG JLT. SMG JLT, which assures strong linearity and low distortion.

Ferroelectric Negative-Capacitance-Assisted Phase-Transition Field-Effect Transistor.

An enormous study is being carried out in the field of emerging steep slope devices, specifically on negative-capacitance-based and phase transition-based devices. This article investigates the action of ferroelectric (FE) and phase transition material (PTM) on a hybrid device, negative-capacitance-assisted phase transition FinFET (NC-PT-FinFET). We encounter several unique phenomena resulting from this unified action and provide valid arguments based on these observations. A significant enhancement in the differential gain and transconductance, a unique variation in the effect of PTM on drain-channel coupling, tunability of hysteresis across PTM by FE thickness( [Formula: see text]), and ultralow subthreshold slope (SS) by lowering both of its factors are some of the major outcomes of the NC-PT-FinFET. Focus is built on comprehending the individual role of FE and PTM in the intriguing features observed in every device performance parameter with the help of mathematical expressions and physical interpretations. Various tunable parameters present in this hybrid device widen its applicability in digital and memory applications.