RESUMEN
In hexagonal materials, (a+c) dislocations are typically observed to dissociate into partial dislocations. Edge (a+c) dislocations are introduced into (0001) nitride semiconductor layers by the process of plastic relaxation. As there is an increasing interest in obtaining relaxed InGaN buffer layers for the deposition of high In content structures, the study of the dissociation mechanism of misfit (a+c) dislocations laying at the InGaN/GaN interface is then crucial for understanding their nucleation and glide mechanisms. In the case of the presented plastically relaxed InGaN layers deposited on GaN substrates, we observe a trigonal network of (a+c) dislocations extending at the interface with a rotation of 3° from <1 1 ¯ $\bar 1$ 00> directions. High-resolution microscopy studies show that these dislocations are dissociated into two Frank-Shockley 1/6<2 2 ¯ $\bar 2$ 03> partial dislocations with the I1 BSF spreading between them. Atomistic simulations of a dissociated edge (a+c) dislocation revealed a 3/5-atom ring structure for the cores of both partial dislocations. The observed separation between two partial dislocations must result from the climb of at least one of the dislocations during the dissociation process, possibly induced by the mismatch stress in the InGaN layer.
RESUMEN
III-nitride compound semiconductors are breakthrough materials regarding device applications. However, their heterostructures suffer from very high threading dislocation (TD) densities that impair several aspects of their performance. The physical mechanisms leading to TD nucleation in these materials are still not fully elucidated. An overlooked but apparently important mechanism is their heterogeneous nucleation on domains of basal stacking faults (BSFs). Based on experimental observations by transmission electron microscopy, we present a concise model of this phenomenon occurring in III-nitride alloy heterostructures. Such domains comprise overlapping intrinsic I1 BSFs with parallel translation vectors. Overlapping of two BSFs annihilates most of the local elastic strain of their delimiting partial dislocations. What remains combines to yield partial dislocations that are always of screw character. As a result, TD nucleation becomes geometrically necessary, as well as energetically favorable, due to the coexistence of crystallographically equivalent prismatic facets surrounding the BSF domain. The presented model explains all observed BSF domain morphologies, and constitutes a physical mechanism that provides insight regarding dislocation nucleation in wurtzite-structured alloy epilayers.
RESUMEN
Scanning electron microscopy, X-ray diffraction and Fourier transformed infrared spectroscopy have been used to characterize the microstructure and instrumented microindentation for the determination of the mechanical properties of Charonia Lampas Lampas shell. Both elastic modulus and hardness are found to be dependent on the texture of the three distinct layers. From the analysis of load-depth curves, the shell exhibits small viscoelastic behaviour at low indentation loads and mainly elastoplastic behaviour at higher loads. These phenomena were attributed to the influence of the organic matter present in the shell. Both elastic modulus and hardness are found to be load-dependent in each layer in relation to their microstructure and, accordingly, to the anisotropy of the predominant mineral part. At a macroscopic scale, this tendency is explained by using a rule of mixture and jointly by the anisotropy of the aragonite. The Bull and Page model is subsequently applied to the hardness variation in order to compute the macrohardness which is the characteristic hardness number of a material and the hardness parameter related to the indentation size effect. This model describes well the experimental results for the relative higher depths, and deviates for the small depths due to the effect of the viscoelastic behaviour which then requires a more appropriate model to describe this phenomenon.
