Rate-equation theory of a feedback insensitive unidirectional semiconductor ring laser.

For our recently designed continuous-wave and single-frequency ring laser with intra-cavity isolator, we have formulated a rate-equation theory which accounts for two sources of mutual back-scattering between the clockwise and counterclockwise modes, i.e. induced by side-wall irregularities and due to inversion-grating-induced spatial hole burning. With this theory we first confirm that for a ring laser without intra-cavity isolation, from sufficiently large pumping strength on, the inversion-grating-induced bistable operation (i.e. either clockwise or counterclockwise) will overrule the back-reflection-induced coupled-mode operation (i.e. both clockwise and counterclockwise). We then analyze the robustness of unidirectional operation in case of intra-cavity isolation against the intra-cavity back-reflection mechanism and grating-induced mode coupling and derive for this case an explicit expression for the directionality in the presence of external optical feedback, valid for sufficiently strong isolation. The predictions posed in the second reference remain unaltered in the presence of the mode coupling mechanisms here considered.

Model and experimental validation of a unidirectional phase modulator.

A unidirectional phase modulator consisting of tandem phase modulators is studied in detail for use as an integral part of an integrated optical isolator. The effects of non-linearity and residual amplitude modulation in the modulators, as well as the effect of the RF driving signals are captured in a phenomenological model for the first time. The model has been verified experimentally using a device realized in a generic InP based photonic integration platform and is used to study the operating range of the device. Design parameters of the modulator are derived such that modulation side bands in the forward propagating light are less than 40 dB, while isolation is maximized.

Frequency comb generation by CW laser injection into a quantum-dot mode-locked laser.

We report on frequency comb generation at 1.5 µm by injection of a CW laser in a hybridly mode-locked InAs/InP two-section quantum-dot laser (HMLQDL). The generated comb has > 60 modes spaced by ∼ 4.5 GHz and a -20 dBc width of > 100 GHz (23 modes) at > 30 dB signal to background ratio. Comb generation was observed with the CW laser (red) detuned more than 20 nm outside the HMLQDL spectrum, spanning a large part of the gain spectrum of the quantum dot material. It is shown that the generated comb is fully coherent with the injected CW laser and RF frequency used to drive the hybrid mode-locking. This method of comb generation is of interest for the creation of small and robust frequency combs for use in optical frequency metrology, high-frequency (> 100 GHz) RF generation and telecommunication applications.

Dual-wavelength passive and hybrid mode-locking of 3, 4.5 and 10 GHz InAs/InP(100) quantum dot lasers.

We present an investigation of passive and hybrid mode-locking in Fabry-Pérot type two-section InAs/InP(100) quantum dot lasers that show dual wavelength operation. Over the whole current and voltage range for mode-locking of these lasers, the optical output spectra show two distinct lobes. The two lobes provide a coherent bandwidth and are verified to lead to two synchronized optical pulses. The generated optical pulses are elongated in time due to a chirp which shows opposite signs over the two spectral lobes. Self-induced mode-locking in the single-section laser shows that the dual-wavelength spectra correspond to emission from ground state. In the hybrid mode-locking regime, a map of locking range is presented by measuring the values of timing jitter for several values of power and frequency of the external electrical modulating signal. An overview of the systematic behavior of InAs/InP(100) quantum dot mode-locked lasers is presented as conclusion.

Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers.

We report on a passively mode-locked InP/InGaAsP multiple quantum well semiconductor ring laser that operates at a 20 GHz repetition rate and around 1575 nm wavelength. The device has been realized using the active-passive integration technology in a standardized photonic integration platform. We demonstrate experimentally for the first time to our knowledge that the relative positioning of the amplifier and absorber in a monolithically integrated ring laser can be used to control the balance of power between counterpropagating fields in the mode-locked state. The directional power balance is verified to be in agreement with a model previously reported.

New role for nonlinear dynamics and chaos in integrated semiconductor laser technology.

Using an integrated colliding-pulse mode-locked semiconductor laser, we demonstrate the existence of nonlinear dynamics and chaos in photonic integrated circuits (PICs) by demonstrating a period-doubling transition into chaos. Unlike their stand-alone counterparts, the dynamics of PICs are more stable over the lifetime of the system, reproducible from batch to batch and on faster time scales due to the small sizes of PICs.

Gain measurements of Fabry-Perot InP/InGaAsP lasers using an ultrahigh-resolution spectrometer.

Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum analyzer are presented for what is believed to be the first time. The high resolution allows for accurate gain measurements close to the lasing threshold. This is demonstrated by gain measurements on a bulk InGaAsP 1.5 microm Fabry-Perot laser. Combined with direct measurement of transparency carrier density values, parameters were determined for characterizing the gain at a range of wavelengths and temperatures. The necessity of the use of a logarithmic gain model is shown.