RESUMEN
We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20 dB) while the symmetric double quantum well device only provides a bandwidth of â¼2.7 nm (full width at -20 dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100 Hz2/Hz and of at most 170 Hz2/Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.
RESUMEN
A dual-wavelength Y-branch distributed Bragg reflector (DBR) diode laser at 785 nm is presented as an excitation light source for shifted excitation Raman difference spectroscopy (SERDS). The monolithic device was realized with deeply etched surface DBR gratings using one-step epitaxy. An optical output power of 140 mW was obtained in continuous-wave (CW) operation for each laser cavity, with emission wavelengths of the device at 784.50 and 785.12 nm. A spectral width of the laser emission of 30 pm (0.5 cm(-1)), including 95% of optical power, was measured. The mean spectral distance of both excitation lines is 0.63 nm (10.2 cm(-1)) over the whole operating range. Raman experiments using polystyrene as the test sample and ambient light as the interference source were carried out and demonstrate the suitability of the dual-wavelength diode laser for SERDS.
RESUMEN
A red-emitting tapered diode laser with a monolithically integrated distributed Bragg reflector grating is presented. The device is able to emit up to 1 W of spectrally stabilized optical output power at 5°C. Depending on the period of the tenth order surface grating the emission wavelengths of these devices from the same gain material are 635 nm, 637 nm, and 639 nm. The emission is as narrow as 9 pm (FWHM) at 637.6 nm. The lateral beam quality is M(2)(1/e(2)) = 1.2. Therefore, these devices simplify techniques such as wavelength multiplexing and fiber coupling dedicating them as light sources for µ-Raman spectroscopy, absolute distance interferometry, and holographic imaging.
Asunto(s)
Láseres de Semiconductores , Refractometría/instrumentación , Color , Diseño de Equipo , Análisis de Falla de Equipo , Integración de SistemasRESUMEN
We demonstrate high-power operation from a singly Ho3+-doped silica fiber laser that is cladding pumped directly with diode lasers operating at 1150 nm. Internal slope efficiencies approaching the Stokes limit were produced, and the maximum output power was 2.2W. This result was achieved using a low Ho3+-ion concentration and La3+-ion codoping, which together limit the transfer of energy between excited Ho3+ ions.
RESUMEN
An output power of 1.74 W at 2.03 microm was generated at a slope efficiency of 51% when a double-clad Tm(3+)-doped silica fiber laser was pumped with high-power 1150 nm diode lasers. Pump excited state absorption from the upper laser level populates higher energy levels allowing cross relaxation to repopulate the upper laser level at a quantum efficiency greater than unity and to limit losses relating to additional pump excited state absorption. The output power was scaled to 4.77 W when both ends of the fiber were pumped.
