One-step synthesized multisize AuAg alloy nanoparticles with high SERS sensitivity in directly detecting SARS-CoV-2 spike protein.

The coronavirus disease 2019 (COVID-19) caused by the severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) has resulted in widespread disease transmission, challenging the stability of global healthcare systems. Surface-enhanced Raman scattering (SERS) as an easy operation, fast, and low-cost technology illustrates a good potential in detecting SARS-CoV-2. In the study, one-step fabrication of gold-silver alloy nanoparticles (AuAgNPs) with adjustable metal proportions and diameters is employed as SERS substrates. The angiotensin-converting enzyme 2 (ACE2) functionalized AuAgNPs are applied as sensor surfaces to detect SARS-CoV-2 S protein. By optimizing the SERS substrates, ACE2/Au35Ag65NPs illustrate higher performance in detecting the SARS-CoV-2 S protein with a limit of detection (LOD) of 10 fg/mL in both phosphate-buffered saline (PBS) and pharyngeal swabs solution (PSS). It also provides excellent reproducibility with a relative standard deviation (RSD) of 7.7 % and 7.9 %, respectively. This easily preparable and highly reproducible SERS substrate has good potential in the practical application of detecting SARS-CoV-2.

Tuning the magnetic properties of van der Waals Fe3GaTe2 crystals by Co doping.

Tuning the magnetic properties of two-dimensional van der Waals ferromagnets has special importance for their practical applications. Using first-principles calculations, we investigate the magnetic properties of Co-doped Fe3GaTe2 with different Co concentrations and different Co atomic sites. Calculation results show that Fe or Co atoms with relatively lower atomic concentrations preferentially occupy Fe1 sites with interlayer coupling, which is more energetically favorable. As the doping concentration of Co atoms increases, the total magnetic moment of the doped system decreases, while the average atomic magnetic moments of Fe1 and Fe2 increase and decrease, respectively, with Fe1 reaching ∼2.08µB. The spin polarization of the doped model 2Co-2 near the Fermi energy level is significantly reduced, while 4Co-3 exhibits an enhanced trend. At some doping level, a phase change from ferromagnetism to antiferromagnetism appears at high Co concentration. These results provide a theoretical basis for experimental studies and valuable information for the development of Fe3GaTe2-based spintronic devices.

Rare Earth Single-Atom Catalysis for High-Performance Li-S Full Battery with Ultrahigh Capacity.

Lithium-sulfur (Li-S) batteries have many advantages but still face problems such as retarded polysulfides redox kinetics and Li dendrite growth. Most reported single atom catalysts (SACs) for Li-S batteries are based on d-band transition metals whose d orbital constitutes active valence band, which is inclined to occur catalyst passivation. SACs based on 4f inner valence orbital of rare earth metals are challenging for their great difficulty to be activated. In this work, we design and synthesize the first rare earth metal Sm SACs which has electron-rich 4f inner orbital to promote catalytic conversion of polysulfides and uniform deposition of Li. Sm SACs enhance the catalysis by the activated 4f orbital through an f-d-p orbital hybridization. Using Sm-N3C3 modified separators, the half cells deliver a high capacity over 600 mAh g-1 and a retention rate of 84.3 % after 2000 cycles. The fabricated Sm-N3C3-Li|Sm-N3C3@PP|S/CNTs full batteries can provide an ultra-stable cycling performance of a retention rate of 80.6 % at 0.2 C after 100 cycles, one of the best full Li-S batteries. This work provides a new perspective for the development of rare earth metal single atom catalysis in electrochemical reactions of Li-S batteries and other electrochemical systems for next-generation energy storage.

2D Tellurium Films Based Self-Drive Near Infrared Photodetector.

To reduce the amount of energy consumed in integrated circuits, high efficiency with the lowest energy is always expected. Self-drive device is one of the options in the pursuit of low power nanodevices. It is a typical strategy to form an internal electric field by constructing a heterojunction in self-drive semiconductor system. Here, a two-step method is proposed to prepare high quality centimeter-sized 2D tellurium (Te) thin film with hall mobility as high as 37.3 cm2 V-1 s-1, and the 2D Te film is further assembled with silicon to form a heterojunction for self-drive photodetector, which can realize effective detection from visible to near infrared bands. The photodetectivity of the heterojunctions can reach 1.58×1011 Jones under the illumination of 400 nm@ 1.615 mW/cm2 and 2.08×108 Jones under the illumination of 1550 nm@ 1.511 mW/cm2 without bias. Our experiments demonstrate the potential of 2D tellurium thin films for wide band and near infrared integrated device applications.

Magnetic Field-driven Insulator-Metal Transition and Colossal Magnetoresistance of Metamagnetic Semiconductor Mercury Thiodichromite Crystals.

A facile method is developed to efficiently prepare metamagnetic mercury thiodichromite (HgCr2S4, HCS) polycrystals and single crystals, and their transport properties are studied. The resistivity of the as-prepared HCS polycrystal shows a semiconducting behavior and no magnetic field dependence in the whole temperature range. In contrast, the annealing treatment of the HCS polycrystal induces gigantic changes: an insulator-metal transition is driven by a magnetic field of 5 T, leading to colossal magnetoresistance (CMR) as high as ∼104. The HCS single crystal grown by a newly developed facile method displays similar properties with a larger CMR up to 106-107. First-principles calculation demonstrates a large spin splitting of band structures, providing the possibility of magnetic polaron existence, which is further evidenced by electron spin resonance spectra. Thus, the insulator-metal transition and CMR can be explained in a magnetic polaronic scenario. This work opens a new window for CMR-based spintronics.

Robust Magnetic Proximity Induced Anomalous Hall Effect in a Room Temperature van der Waals Ferromagnetic Semiconductor Based 2D Heterostructure.

Developing novel high-temperature van der Waals ferromagnetic semiconductor materials and investigating their interface coupling effects with 2D topological semimetals are pivotal for advancing next-generation spintronic and quantum devices. However, most van der Waals ferromagnetic semiconductors exhibit ferromagnetism only at low temperatures, limiting the proximity research on their interfaces with topological semimetals. Here, an intrinsic, van der Waals layered room-temperature ferromagnetic semiconductor crystal, FeCr0.5 Ga1.5 Se4 (FCGS), is reported with a Curie temperature (TC ) as high as 370 K, setting a new record for van der Waals ferromagnetic semiconductors. The saturation magnetization at low temperature (2 K) and room temperature (300 K) reaches 8.2 and 2.7 emu g-1 , respectively. Furthermore, FCGS possesses a bandgap of ≈1.2 eV, which is comparable to the widely used commercial silicon. The FCGS/graphene 2D heterostructure exhibits an impeccably smooth and gapless interface, thereby inducing a robust van der Waals magnetic proximity coupling effect between FCGS and graphene. After the proximity coupling, graphene undergoes a charge carrier transition from electrons to holes, accompanied by a transition from non-magnetic to ferromagnetic transport behavior with robust anomalous Hall effect (AHE). Notably, the van der Waals magnetic proximity-induced AHE remains robust even up to 400 K.

Multifunctional Catalytic Hierarchical Interfaces of Ni12 P5 -Ni2 P Porous Nanosheets Enabled Both Sulfides Reaction Promotion and Li-Dendrite Suppression for High-Performance Li-S Full Batteries.

The development of lithium-sulfur (Li-S) batteries is very promising and yet faces the issues of hindered polysulfides conversion and Li dendrite growth. Different from using different materials strategies to overcome these two types of problems, here multifunctional catalytic hierarchical interfaces of Ni12 P5 -Ni2 P porous nanosheets formed by Ni2 P partially in situ converted from Ni12 P5 are proposed. The unique electronic structure in the interface endows Ni12 P5 -Ni2 P effective electrocatalysis effect toward both sulfides' reduction and oxidation through reducing Gibbs free energies, indicating a bidirectional conversion acceleration. Importantly, Ni12 P5 -Ni2 P porous nanosheets with hierarchical interfaces also reduced the Li nucleation energy barrier, and a dendrite-free Li deposition is realized during the overall Li deposition and stripping steps. To this end, Ni12 P5 -Ni2 P decorated carbon nanotube/S cathode showing a high capacity of over 1500 mAh g-1 , and a high rate capability of 8 C. Moreover, the coin full cell delivered a high capacity of 1345 mAh g-1 at 0.2 C and the pouch full cell delivered a high capacity of 1114 mAh g-1 at 0.2 C with high electrochemical stability during 180° bending. This work inspires the exploration of hierarchical structures of 2D materials with catalytically active interfaces to improve the electrochemistry of Li-S full battery.

Room-Temperature van der Waals Ferromagnet Switching by Spin-Orbit Torques.

The emerging wide varieties of the van der Waals (vdW) magnets with atomically thin and smooth interfaces hold great promise for next-generation spintronic devices. However, due to the lower Curie temperature of the vdW ferromagnets than room temperature, electrically manipulating its magnetization at room temperature has not been realized. In this work, it is demonstrated that the perpendicular magnetization of the vdW ferromagnet Fe3 GaTe2 can be effectively switched at room temperature in the Fe3 GaTe2 /Pt bilayer by spin-orbit torques (SOTs) with a relatively low current density of 1.3 × 107 A cm-2 . Moreover, the high SOT efficiency of ξDL ≈ 0.28 is quantitatively determined by harmonic measurements, which is higher than those in Pt-based heavy metal/conventional ferromagnet devices. The findings of room-temperature vdW ferromagnet switching by SOTs provide a significant basis for the development of vdW-ferromagnet-based spintronic applications.

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Recent investigations reveal elemental semimetal (Bi and Sb) contacts fabricated with conventional deposition processes exhibit a remarkable capacity of approaching the quantum limit in two-dimensional (2D) semiconductor contacts, implying it might be an optimal option to solve the contact issue of 2D semiconductor electronics. Here, we demonstrate novel compound Dirac semimetal ZrTe2 contacts to MoS2 constructed by a nondestructive van der Waals (vdW) transfer process, exhibiting excellent ohmic contact characteristics with a negligible Schottky barrier. The band hybridization between ZrTe2 and MoS2 was verified. The bilayer MoS2 transistor with a 250 nm channel length on a 20 nm thick hexagonal boron nitride (h-BN) exhibits an ION/IOFF current ratio over 105 and an on-state current of 259 µA µm-1. The current results reveal that 2D compound semimetals with vdW contacts can offer a diverse selection of proper semimetals with adjustable work functions for the next-generation 2D-based beyond-silicon electronics.

Halide solid-state electrolytes for all-solid-state batteries: structural design, synthesis, environmental stability, interface optimization and challenges.

Since the huge breakthrough in 2018, research on halide solid-state electrolytes (SSEs) has set off a new craze. In comparison with oxide and sulfide SSEs, halide SSEs have more balanced properties in various aspects, including ionic conductivity, electrochemical stability window, and moisture resistance. Herein, the overall knowledge and deep understanding of halide SSEs and their practical applications in all-solid-state batteries (ASSBs) are introduced. Firstly, the principle of screening halide SSE components is proposed. Among F, Cl, Br and I anions, the Cl anion is excellent owing to its suitable ionic conductivity and electrochemical stability window. The Sc, Y, and lanthanide elements are also more compatible with Cl anions in terms of electronegativity. Secondly, the structural design theory of halide SSEs with high ionic conductivity and the mechanism of Li ion migration are described. A monoclinic structure is more conducive to Li ion migration, compared with trigonal and orthorhombic structures. Additionally, substitution strategies for halide SSEs are discussed, mainly including dual-halogen, isovalent cation substitution, and aliovalent cation substitution. Furthermore, the mechanism of moisture resistance and synthesis method of halide SSEs are analyzed. Compared with the solid-state reaction and mechanochemistry method, wet chemical synthesis is more likely to achieve scale-up production of halide SSEs. Finally, the application prospects and challenges of halide SSEs in ASSBs are outlined.

MASCN Surface Treatment to Reduce Phase Transition Temperature and Regulate Strain for Efficient and Stable α-FAPbI3 Perovskite Solar Cells.

The fabrication of α-FAPbI3 perovskite films usually requires high temperature annealing above 150 °C, and the residual tensile strain in the films seriously affects the stability of α-FAPbI3 by converting to δ-phase FAPbI3. Here, we use MASCN surface treatment of FAPbI3 films to induce a rotation of the coplanar octahedron [PbI6]4- to the metric octahedron for the strong interaction of SCN- with Pb2+, converting δ-FAPbI3 into α-FAPbI3 highly crystalline films at room temperature. The optimized FAPbI3 films have high stability due to releasing residual tensile strains after MASCN treatment. The efficiency of the MASCN-treated unannealed FAPbI3 PSC is 19.03%, while the optimized FAPbI3 annealed at 100 °C shows a maximum PCE of 21.95% on a small area. The solar cell stability for humidity, light, and thermal stability are significantly improved. The MASCN treated FAPbI3 achieves a PCE of 15.32% on a PSC module with an effective area of 9.6 cm2 and maintains an initial efficiency of 94.1% after 100 days of ageing at 85 °C and 85% humidity.

Room-Temperature and Tunable Tunneling Magnetoresistance in Fe3GaTe2-Based 2D van der Waals Heterojunctions.

Magnetic tunnel junctions (MTJs) based on van der Waals (vdW) heterostructures with sharp and clean interfaces on the atomic scale are essential for the application of next-generation spintronics. However, the lack of room-temperature intrinsic ferromagnetic crystals with perpendicular magnetic anisotropy has greatly hindered the development of vertical MTJs. The discovery of room-temperature intrinsic ferromagnetic two-dimensional (2D) crystal Fe3GaTe2 has solved the problem and greatly facilitated the realization of practical spintronic devices. Here, we demonstrate a room-temperature MTJ based on a Fe3GaTe2/WS2/Fe3GaTe2 heterostructure for the first time. The tunneling magnetoresistance (TMR) ratio is up to 213% with a high spin polarization of 72% at 10 K, the highest ever reported in Fe3GaTe2-based MTJs up to now. A tunneling spin-valve signal robustly persists at room temperature (300 K) with a bias current down to 10 nA. Moreover, the spin polarization can be modulated by bias current and the TMR shows a sign reversal at a large bias current. Our work sheds light on the potential application of low-energy consumption in all-2D vdW spintronics and offers alternative routes for the electronic control of spintronic devices.

Nano-biosensor for SARS-CoV-2/COVID-19 detection: methods, mechanism and interface design.

The epidemic of coronavirus disease 2019 (COVID-19) was a huge disaster to human society. The severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2), which led to COVID-19, has resulted in a large number of deaths. Even though the reverse transcription-polymerase chain reaction (RT-PCR) is the most efficient method for the detection of SARS-CoV-2, the disadvantages (such as long detection time, professional operators, expensive instruments, and laboratory equipment) limit its application. In this review, the different kinds of nano-biosensors based on surface-enhanced Raman scattering (SERS), surface plasmon resonance (SPR), field-effect transistor (FET), fluorescence methods, and electrochemical methods are summarized, starting with a concise description of their sensing mechanism. The different bioprobes (such as ACE2, S protein-antibody, IgG antibody, IgM antibody, and SARS-CoV-2 DNA probes) with different bio-principles are introduced. The key structural components of the biosensors are briefly introduced to give readers an understanding of the principles behind the testing methods. In particular, SARS-CoV-2-related RNA mutation detection and its challenges are also briefly described. We hope that this review will encourage readers with different research backgrounds to design SARS-CoV-2 nano-biosensors with high selectivity and sensitivity.

Room-temperature spin-valve devices based on Fe3GaTe2/MoS2/Fe3GaTe2 2D van der Waals heterojunctions.

The spin-valve effect has been the focus of spintronics over the last decades due to its potential for application in many spintronic devices. Two-dimensional (2D) van der Waals (vdW) materials are highly efficient to build spin-valve heterojunctions. However, the Curie temperatures (TC) of the vdW ferromagnetic (FM) 2D crystals are mostly below room temperature (∼30-220 K). It is very challenging to develop room-temperature, FM 2D crystal-based spin-valve devices. Here, we report room-temperature, FM 2D-crystal-based all-2D vdW Fe3GaTe2/MoS2/Fe3GaTe2 spin-valve devices. The magnetoresistance (MR) of the device was up to 15.89% at 2.3 K and 11.97% at 10 K, which are 4-30 times the MR of the spin valves of Fe3GeTe2/MoS2/Fe3GeTe2 and conventional NiFe/MoS2/NiFe. The typical spin valve effect showed strong dependence on the MoS2 spacer thickness in the vdW heterojunction. Importantly, the spin valve effect (0.31%) robustly existed even at 300 K with low working currents down to 10 nA (0.13 A cm-2). This work provides a general vdW platform to develop room-temperature, 2D FM-crystal-based 2D spin-valve devices.

Pt-Based Oxygen Reduction Reaction Catalysts in Proton Exchange Membrane Fuel Cells: Controllable Preparation and Structural Design of Catalytic Layer.

Proton exchange membrane fuel cells (PEMFCs) have attracted extensive attention because of their high efficiency, environmental friendliness, and lack of noise pollution. However, PEMFCs still face many difficulties in practical application, such as insufficient power density, high cost, and poor durability. The main reason for these difficulties is the slow oxygen reduction reaction (ORR) on the cathode due to the insufficient stability and catalytic activity of the catalyst. Therefore, it is very important to develop advanced platinum (Pt)-based catalysts to realize low Pt loads and long-term operation of membrane electrode assembly (MEA) modules to improve the performance of PEMFC. At present, the research on PEMFC has mainly been focused on two areas: Pt-based catalysts and the structural design of catalytic layers. This review focused on the latest research progress of the controllable preparation of Pt-based ORR catalysts and structural design of catalytic layers in PEMFC. Firstly, the design principle of advanced Pt-based catalysts was introduced. Secondly, the controllable preparation of catalyst structure, morphology, composition and support, and their influence on catalytic activity of ORR and overall performance of PEMFC, were discussed. Thirdly, the effects of optimizing the structure of the catalytic layer (CL) on the performance of MEA were analyzed. Finally, the challenges and prospects of Pt-based catalysts and catalytic layer design were discussed.

Highly Tunable Beyond-Room-Temperature Intrinsic Ferromagnetism in Cr-Doped Topological Crystalline Insulator SnTe Crystals.

The combination of topological phase and intrinsic beyond-room-temperature ferromagnetism is expected to realize the quantum anomalous Hall effect at a high temperature. However, no beyond-room-temperature intrinsic ferromagnetism has been reported in either topological insulator or topological crystalline insulator (TCI) so far. Here, we report Cr-doping in TCI-phase SnTe crystals which possess highly tunable beyond-room-temperature intrinsic ferromagnetism including Tc, magnetic moment, and coercivity by varying Cr contents and crystal thickness. With the increase of the Cr content, the Tc increases by 159 K from 221 to 380 K and the saturation magnetic moments increase by ∼23.6 times from 0.018 to 0.421 µB/f.u. This intrinsic beyond-room-temperature ferromagnetism is fully demonstrated by the anomalous Hall effect and magneto-optical Kerr effect in a single CrxSn1-xTe nanosheet. Moreover, the room-temperature tunneling magnetoresistance effect has been realized by using a CrxSn1-xTe flake, a Fe thin film, and a commercially compatible ultrathin AlOx tunneling barrier. This work indicates a great potential of CrxSn1-xTe crystals in room-temperature magnetoelectronic and spintronic devices.

Electrostatic Potential-Induced Co-N4 Active Centers in a 2D Conductive Metal-Organic Framework for High-Performance Lithium-Sulfur Batteries.

The use of single-atom catalysts is a promising approach to solve the issues of polysulfide shuttle and sluggish conversion chemistry in lithium-sulfur (Li-S) batteries. However, a single-atom catalyst usually contains a low content of active centers because more metal ions lead to generation of aggregation or the formation of nonatomic catalysts. Herein, a 2D conductive metal-organic framework [Co3(HITP)2] with abundant and periodic Co-N4 centers was decorated on carbon fiber paper as a functional interlayer for advanced Li-S batteries. The Co3(HITP)2-decorated interlayer exhibits a chemical anchoring effect and facilitates conversion kinetics, thus effectively restraining the polysulfide shuttle effect. Density functional theory calculations demonstrate that the Co-N4 centers in Co3(HITP)2 feature more intense electron density and more negative electrostatic potential distribution than those in the carbon matrix as the single-atom catalyst, thereby promoting the electrochemical performance due to the lower reaction Gibbs free energies and decomposition energy barriers. As a result, the optimized batteries deliver a high rate capacity of over 400 mA h g-1 at 4 C current and a satisfying capacity decay rate of 0.028% per cycle over 1000 cycles at 1 C. The designed Co3(HITP)2-decorated interlayer was used to prepare one of the most advanced Li-S batteries with excellent performance (reversible capacity of 762 mA h g-1 and 79.6% capacity retention over 500 cycles) under high-temperature conditions, implying its great potential for practical applications.

F-doping-Enhanced Carrier Transport in the SnO2/Perovskite Interface for High-Performance Perovskite Solar Cells.

SnO2 is widely used as the electron transport layer (ETL) in n-i-p perovskite solar cells. However, the deep-level defects at the interface between SnO2 and the perovskite film will lead to energy loss, reducing the open-circuit voltage. Therefore, the interface optimization is essential to raise the efficiency and enhance the stability of perovskite solar cells. In this work, we introduce NH4F into the SnO2 electron transport layers, and the optimized SnO2 films reduce the interface defect density, improve the charge extraction, and reveal a better energy-level arrangement. Compared to the conventional SnO2 perovskite solar cell, the average Voc is improved by 70 mV with the champion efficiency up to 22.12%. Moreover, the unencapsulated F-doped SnO2 perovskite solar cells show better thermal stability (maintained 86.2%) and humidity stability (maintained 80.8%) after 35 days.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications.

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

Above-room-temperature strong intrinsic ferromagnetism in 2D van der Waals Fe3GaTe2 with large perpendicular magnetic anisotropy.

The absence of two-dimensional (2D) van der Waals (vdW) ferromagnetic crystals with both above-room-temperature strong intrinsic ferromagnetism and large perpendicular magnetic anisotropy (PMA) severely hinders practical applications of 2D vdW crystals in next-generation low-power magnetoelectronic and spintronic devices. Here, we report a vdW intrinsic ferromagnetic crystal Fe3GaTe2 that exhibits record-high above-room-temperature Curie temperature (Tc, ~350-380 K) for known 2D vdW intrinsic ferromagnets, high saturation magnetic moment (40.11 emu/g), large PMA energy density (~4.79 × 105 J/m3), and large anomalous Hall angle (3%) at room temperature. Such large room-temperature PMA is better than conventional widely-used ferromagnetic films like CoFeB, and one order of magnitude larger than known 2D vdW intrinsic ferromagnets. Room-temperature thickness and angle-dependent anomalous Hall devices and direct magnetic domains imaging based on Fe3GaTe2 nanosheet have been realized. This work provides an avenue for room-temperature 2D ferromagnetism, electrical control of 2D ferromagnetism and promote the practical applications of 2D-vdW-integrated spintronic devices.